JPS5279675A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5279675A
JPS5279675A JP50156152A JP15615275A JPS5279675A JP S5279675 A JPS5279675 A JP S5279675A JP 50156152 A JP50156152 A JP 50156152A JP 15615275 A JP15615275 A JP 15615275A JP S5279675 A JPS5279675 A JP S5279675A
Authority
JP
Japan
Prior art keywords
semiconductor device
impuritier
doubling
substrate
achieve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50156152A
Other languages
Japanese (ja)
Inventor
Teruichiro Tanaka
Hiroshi Isaji
Masakatsu Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50156152A priority Critical patent/JPS5279675A/en
Publication of JPS5279675A publication Critical patent/JPS5279675A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To achieve the increase in current amplification factor and dielectric strength by forming a N<+> type buried layer with impuritier having high diffusion velocity within a N<+> substrate and by doubling at a predetermined region in using internal diffusion.
JP50156152A 1975-12-25 1975-12-25 Semiconductor device Pending JPS5279675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50156152A JPS5279675A (en) 1975-12-25 1975-12-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50156152A JPS5279675A (en) 1975-12-25 1975-12-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5279675A true JPS5279675A (en) 1977-07-04

Family

ID=15621471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50156152A Pending JPS5279675A (en) 1975-12-25 1975-12-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5279675A (en)

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