JPS52146574A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52146574A
JPS52146574A JP6307876A JP6307876A JPS52146574A JP S52146574 A JPS52146574 A JP S52146574A JP 6307876 A JP6307876 A JP 6307876A JP 6307876 A JP6307876 A JP 6307876A JP S52146574 A JPS52146574 A JP S52146574A
Authority
JP
Japan
Prior art keywords
semiconductor device
encircling
disposing
opposing
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6307876A
Other languages
Japanese (ja)
Inventor
Takao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP6307876A priority Critical patent/JPS52146574A/en
Publication of JPS52146574A publication Critical patent/JPS52146574A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the characteristics of I<2>Ls by disposing an insulation layer directly under injector and external base region and encircling the outer side opposite to opposing of both regions.
JP6307876A 1976-05-31 1976-05-31 Semiconductor device Pending JPS52146574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6307876A JPS52146574A (en) 1976-05-31 1976-05-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6307876A JPS52146574A (en) 1976-05-31 1976-05-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52146574A true JPS52146574A (en) 1977-12-06

Family

ID=13218928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6307876A Pending JPS52146574A (en) 1976-05-31 1976-05-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52146574A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5382184A (en) * 1976-12-27 1978-07-20 Fujitsu Ltd Semiconductor device
JPS5543848A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Integrated circuit and manufacture thereof
JPS55174478U (en) * 1979-06-04 1980-12-15
JPS5640273A (en) * 1979-09-12 1981-04-16 Oki Electric Ind Co Ltd Semiconductor device and preparation of the same
JPS5651856A (en) * 1979-10-03 1981-05-09 Oki Electric Ind Co Ltd Thereof semiconductor device and manufacturing
JPS5668167U (en) * 1979-10-30 1981-06-06
JPS56122158A (en) * 1980-03-03 1981-09-25 Toshiba Corp Semiconductor device
JPS56133864A (en) * 1980-03-22 1981-10-20 Toshiba Corp Semiconductor device and manufacture thereof
JPS5721851A (en) * 1980-07-16 1982-02-04 Toshiba Corp Semiconductor integrated circuit
JPS5721852A (en) * 1980-07-16 1982-02-04 Toshiba Corp Semiconductor integrated circuit
JPS58210659A (en) * 1982-06-01 1983-12-07 Nec Corp Semiconductor device and manufacture thereof

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5382184A (en) * 1976-12-27 1978-07-20 Fujitsu Ltd Semiconductor device
JPS5543848A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Integrated circuit and manufacture thereof
JPS55174478U (en) * 1979-06-04 1980-12-15
JPS5640273A (en) * 1979-09-12 1981-04-16 Oki Electric Ind Co Ltd Semiconductor device and preparation of the same
JPS5651856A (en) * 1979-10-03 1981-05-09 Oki Electric Ind Co Ltd Thereof semiconductor device and manufacturing
JPS6152574B2 (en) * 1979-10-03 1986-11-13 Oki Electric Ind Co Ltd
JPS5668167U (en) * 1979-10-30 1981-06-06
JPS56122158A (en) * 1980-03-03 1981-09-25 Toshiba Corp Semiconductor device
JPS56133864A (en) * 1980-03-22 1981-10-20 Toshiba Corp Semiconductor device and manufacture thereof
JPS5721851A (en) * 1980-07-16 1982-02-04 Toshiba Corp Semiconductor integrated circuit
JPS5721852A (en) * 1980-07-16 1982-02-04 Toshiba Corp Semiconductor integrated circuit
JPS58210659A (en) * 1982-06-01 1983-12-07 Nec Corp Semiconductor device and manufacture thereof

Similar Documents

Publication Publication Date Title
JPS543479A (en) Semiconductor device and its manufacture
JPS5591862A (en) Semiconductor device
JPS51135373A (en) Semiconductor device
JPS52146574A (en) Semiconductor device
JPS5324277A (en) Semiconductor devic e and its production
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS5439579A (en) Semiconductor device of field effect type
JPS52128063A (en) Manufacture of semiconductor device
JPS5346288A (en) Mis type semiconductor device
JPS5269275A (en) Transistor
JPS5356968A (en) High frequency semiconductor device
JPS5294779A (en) Semiconductor device
JPS5339088A (en) Insulated gate type field effect semiconductor device
JPS5373979A (en) Transistor device
JPS5372577A (en) High dielectric strength field effect transistor
JPS5382184A (en) Semiconductor device
JPS53118985A (en) Semiconductor device
JPS5329082A (en) Semiconductor device
JPS5384556A (en) Semiconductor device
JPS5410688A (en) Production of semiconductor device
JPS51118965A (en) Insulation film of semiconductor device
JPS5218183A (en) Semiconductor device
JPS5339073A (en) Semiconductor device
JPS52146575A (en) Production of semiconductor device
JPS5368176A (en) High frequency power semiconductor device