JPS53118985A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53118985A
JPS53118985A JP3326377A JP3326377A JPS53118985A JP S53118985 A JPS53118985 A JP S53118985A JP 3326377 A JP3326377 A JP 3326377A JP 3326377 A JP3326377 A JP 3326377A JP S53118985 A JPS53118985 A JP S53118985A
Authority
JP
Japan
Prior art keywords
semiconductor device
polycrstal
invertor
injector
establish
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3326377A
Other languages
Japanese (ja)
Other versions
JPS5712540B2 (en
Inventor
Tetsushi Sakai
Hiroki Yamauchi
Yoshiharu Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3326377A priority Critical patent/JPS53118985A/en
Publication of JPS53118985A publication Critical patent/JPS53118985A/en
Publication of JPS5712540B2 publication Critical patent/JPS5712540B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To establish I<2>L of high performance, by providing a compensating layer external the base layer from the p type polycrstal silicon commonly used for the base terminal and by placing an invertor inside and injector at outside.
JP3326377A 1977-03-28 1977-03-28 Semiconductor device Granted JPS53118985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3326377A JPS53118985A (en) 1977-03-28 1977-03-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3326377A JPS53118985A (en) 1977-03-28 1977-03-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS53118985A true JPS53118985A (en) 1978-10-17
JPS5712540B2 JPS5712540B2 (en) 1982-03-11

Family

ID=12381624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3326377A Granted JPS53118985A (en) 1977-03-28 1977-03-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53118985A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567466A (en) * 1979-06-29 1981-01-26 Ibm Selffalignment semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567466A (en) * 1979-06-29 1981-01-26 Ibm Selffalignment semiconductor device

Also Published As

Publication number Publication date
JPS5712540B2 (en) 1982-03-11

Similar Documents

Publication Publication Date Title
JPS5395571A (en) Semiconductor device
JPS52146574A (en) Semiconductor device
JPS53118985A (en) Semiconductor device
JPS5412286A (en) Semiconductor device
JPS534472A (en) Semiconductor package
JPS53128285A (en) Semiconductor device and production of the same
JPS5346288A (en) Mis type semiconductor device
JPS5380183A (en) Semiconductor device
JPS5423387A (en) Semiconductor integrated-circuit device
JPS52127179A (en) Manufacturing method of semiconductor device
JPS53128283A (en) Semiconductor device
JPS5228868A (en) Semiconductor device
JPS53130981A (en) Manufacture for semiconductor device
JPS5269275A (en) Transistor
JPS538072A (en) Semiconductor device
JPS5410688A (en) Production of semiconductor device
JPS51145267A (en) Manufacture of semiconductor device
JPS548459A (en) Semiconductor device
JPS51122375A (en) Semiconductor device
JPS5365063A (en) Semiconductor device
JPS5373979A (en) Transistor device
JPS5366369A (en) Semiconductor device
JPS5372567A (en) Semiconductor device
JPS5354493A (en) Electronic watch
JPS52141565A (en) Manufacture of semiconductor unit