JPS51118965A - Insulation film of semiconductor device - Google Patents

Insulation film of semiconductor device

Info

Publication number
JPS51118965A
JPS51118965A JP1795076A JP1795076A JPS51118965A JP S51118965 A JPS51118965 A JP S51118965A JP 1795076 A JP1795076 A JP 1795076A JP 1795076 A JP1795076 A JP 1795076A JP S51118965 A JPS51118965 A JP S51118965A
Authority
JP
Japan
Prior art keywords
insulation film
semiconductor
electrode
capacity
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1795076A
Other languages
Japanese (ja)
Other versions
JPS5343013B2 (en
Inventor
Masami Tomono
Toru Abe
Yukiyoshi Harada
Kikuji Sato
Takeshi Takagi
Genichi Kamoshita
Yuichiro Ooya
Atsushi Saiki
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1795076A priority Critical patent/JPS5343013B2/ja
Publication of JPS51118965A publication Critical patent/JPS51118965A/en
Publication of JPS5343013B2 publication Critical patent/JPS5343013B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED

Abstract

PURPOSE: To reduce the capacity between electrode and semiconductor base by forming a new polyimide resin film on an insulation film.
COPYRIGHT: (C)1976,JPO&Japio
JP1795076A 1976-02-23 1976-02-23 Expired JPS5343013B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1795076A JPS5343013B2 (en) 1976-02-23 1976-02-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1795076A JPS5343013B2 (en) 1976-02-23 1976-02-23

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP47103588A Division JPS5131185B2 (en) 1972-10-18 1972-10-18

Publications (2)

Publication Number Publication Date
JPS51118965A true JPS51118965A (en) 1976-10-19
JPS5343013B2 JPS5343013B2 (en) 1978-11-16

Family

ID=11958035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1795076A Expired JPS5343013B2 (en) 1976-02-23 1976-02-23

Country Status (1)

Country Link
JP (1) JPS5343013B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204277A (en) * 1992-09-10 1994-07-22 Texas Instr Inc <Ti> Wire bonding method and integrated circuit device made by it

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0683144U (en) * 1993-04-23 1994-11-29 新日本製鐵株式会社 Tundish weir for continuous casting

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204277A (en) * 1992-09-10 1994-07-22 Texas Instr Inc <Ti> Wire bonding method and integrated circuit device made by it

Also Published As

Publication number Publication date
JPS5343013B2 (en) 1978-11-16

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