JPS56133864A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS56133864A
JPS56133864A JP3577580A JP3577580A JPS56133864A JP S56133864 A JPS56133864 A JP S56133864A JP 3577580 A JP3577580 A JP 3577580A JP 3577580 A JP3577580 A JP 3577580A JP S56133864 A JPS56133864 A JP S56133864A
Authority
JP
Japan
Prior art keywords
layer
type
emitter
region
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3577580A
Other languages
Japanese (ja)
Inventor
Yoshitaka Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3577580A priority Critical patent/JPS56133864A/en
Priority to EP19810101993 priority patent/EP0036620B1/en
Priority to DE8181101993T priority patent/DE3160917D1/en
Publication of JPS56133864A publication Critical patent/JPS56133864A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

Abstract

PURPOSE:To reduce the base resistance and the emitter wiring resistance and obtain an element which is minuter and of higher performance and higher degree of integration by forming a base contact hole and an emitter region selectively by using the epitaxial growth technique and in the self alignment manner. CONSTITUTION:In the n<+> type burried layer in a p<-> type semiconductor substrate 1, a collector region 22 is provided, and n type epitaxial layer 3 is formed, and the N type semiconductor layer is isolated by a p<+> type isolation 4. Then, a portion of an Si nitride film 71 is opened to form a P type region 5 to be a base, and an Si nitride film 82 thereon is opened to grow undoped monocrystalline and polycrystalline Si layers 101 and 91 by using the vapor phase epitaxy to obtain the projecting layer 101 and the continuous layer 91 for the emitter leading electrode wiring. Then, an n<+> layer 102 is formed, the monocrystalline and polycrystalline Si layers are selectively oxidized, and the film 8 is removed by dry etching to form a base contact hole and an emitter region by the self alignment manner. Thereafter, a metal electrode film 11 is cover-attached thereto to obtain a bi-polar npn transistor of high speed and high degree of integration.
JP3577580A 1980-03-22 1980-03-22 Semiconductor device and manufacture thereof Pending JPS56133864A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP3577580A JPS56133864A (en) 1980-03-22 1980-03-22 Semiconductor device and manufacture thereof
EP19810101993 EP0036620B1 (en) 1980-03-22 1981-03-17 Semiconductor device and method for fabricating the same
DE8181101993T DE3160917D1 (en) 1980-03-22 1981-03-17 Semiconductor device and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3577580A JPS56133864A (en) 1980-03-22 1980-03-22 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS56133864A true JPS56133864A (en) 1981-10-20

Family

ID=12451253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3577580A Pending JPS56133864A (en) 1980-03-22 1980-03-22 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56133864A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61201465A (en) * 1985-03-04 1986-09-06 Nec Corp Manufacture of transistor
US5198689A (en) * 1988-11-30 1993-03-30 Fujitsu Limited Heterojunction bipolar transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029184A (en) * 1973-07-17 1975-03-25
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device
JPS52146574A (en) * 1976-05-31 1977-12-06 Sony Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029184A (en) * 1973-07-17 1975-03-25
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device
JPS52146574A (en) * 1976-05-31 1977-12-06 Sony Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61201465A (en) * 1985-03-04 1986-09-06 Nec Corp Manufacture of transistor
US5198689A (en) * 1988-11-30 1993-03-30 Fujitsu Limited Heterojunction bipolar transistor

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