JPS5513957A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5513957A JPS5513957A JP8735878A JP8735878A JPS5513957A JP S5513957 A JPS5513957 A JP S5513957A JP 8735878 A JP8735878 A JP 8735878A JP 8735878 A JP8735878 A JP 8735878A JP S5513957 A JPS5513957 A JP S5513957A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- film
- tableland
- conducts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To improve breakdown characteristics by providing a tableland-shaped projection at the center section of a GaAs layer which conducts in only one direction; then making an AlGaAs layer, which conducts in the same direction as the GaAs layer, over the entire surface; and by providing an area, that conducts in the opposite direction, which reaches the top of projection.
CONSTITUTION: A N+ type Al0.2G0.8As layer 12 and a N type GaAs layer 13 are laid on a GaAs substrate 11, thus obtaining a liquid phase epitaxial growth. Then the layer 13 is selectively etched to form a circular tableland-shaped layer 13' at its center. A N type Al0.2Ga0.8As layer 14 is made to grow the entire surface including the layer 13', and the both ends of the film 14 are covered with concentric circular thin films 15 made of Si3N4 etc. Then a P type region 16 is formed by means of diffusion process to the center of the layer 14 which includes the top of the tableland of the layer 13'; thus forming a PN junction 17 to the side face and another PN junction 17b to the bottom. On the film 15, a Si3N4 film 15' that is wider than the film 15 is covered. Then a P type electrode 18 is installed to an opening on the area 16, while the center section of the substrate 11 is removed from the reverse side, and a N type electrode 19 is stuck to the remaining reverse side.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8735878A JPS5513957A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8735878A JPS5513957A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5513957A true JPS5513957A (en) | 1980-01-31 |
| JPS6244432B2 JPS6244432B2 (en) | 1987-09-21 |
Family
ID=13912655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8735878A Granted JPS5513957A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5513957A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5572084A (en) * | 1978-11-27 | 1980-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo-detector |
| JPS55162280A (en) * | 1979-06-01 | 1980-12-17 | Mitsubishi Electric Corp | Photodiode |
| JPS56158488A (en) * | 1980-05-12 | 1981-12-07 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5723277A (en) * | 1980-07-17 | 1982-02-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light-receiving element and manufacture thereof |
| US4656494A (en) * | 1984-05-31 | 1987-04-07 | Fujitsu Limited | Avalanche multiplication photodiode having a buried structure |
| US4949144A (en) * | 1985-09-24 | 1990-08-14 | Kabushiki Kaisha Toshiba | Semiconductor photo-detector having a two-stepped impurity profile |
-
1978
- 1978-07-17 JP JP8735878A patent/JPS5513957A/en active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5572084A (en) * | 1978-11-27 | 1980-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo-detector |
| JPS6244431B2 (en) * | 1978-11-27 | 1987-09-21 | Nippon Telegraph & Telephone | |
| JPS55162280A (en) * | 1979-06-01 | 1980-12-17 | Mitsubishi Electric Corp | Photodiode |
| JPS56158488A (en) * | 1980-05-12 | 1981-12-07 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5723277A (en) * | 1980-07-17 | 1982-02-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light-receiving element and manufacture thereof |
| US4656494A (en) * | 1984-05-31 | 1987-04-07 | Fujitsu Limited | Avalanche multiplication photodiode having a buried structure |
| US4949144A (en) * | 1985-09-24 | 1990-08-14 | Kabushiki Kaisha Toshiba | Semiconductor photo-detector having a two-stepped impurity profile |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244432B2 (en) | 1987-09-21 |
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