JPS5572084A - Semiconductor photo-detector - Google Patents

Semiconductor photo-detector

Info

Publication number
JPS5572084A
JPS5572084A JP14534678A JP14534678A JPS5572084A JP S5572084 A JPS5572084 A JP S5572084A JP 14534678 A JP14534678 A JP 14534678A JP 14534678 A JP14534678 A JP 14534678A JP S5572084 A JPS5572084 A JP S5572084A
Authority
JP
Japan
Prior art keywords
layer
region
junction
type
photo detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14534678A
Other languages
Japanese (ja)
Other versions
JPS6244431B2 (en
Inventor
Yoshihisa Yamamoto
Hiroshi Kanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14534678A priority Critical patent/JPS5572084A/en
Publication of JPS5572084A publication Critical patent/JPS5572084A/en
Publication of JPS6244431B2 publication Critical patent/JPS6244431B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To provide a planer construction APD (avalanche photo diode) small in the dark current and the junction capacity reducing the process by forming the pn- conjunction under the photo detecting surface in or in contact with a semiconductor material having a band gap smaller than the pn-junction around the surface.
CONSTITUTION: An epitaxial layer 10 of n-type InGaAsP or InP is made to frow on an n+-type InP substrate 9 and a mesa etching is conducted to remove all thereof but the central portion. Then, an n-type InP layer 11 is made to grow on the entire substrate including the central portion and a p-type region 3 is formed on the layer 11 by diffusion reaching the layer 10. Otherwise, the continuous epitaxial growth of the layer 11 may be done on the layer 10 and then, a partial etching is conducted to form a region 3 in an area including the layer 10. It also may be accepted that the layers 10 and 11 are further continuously grown with the front of the region 3 demarcated near the interface between the layers 10 and 11. This allows the breakdown voltage to be almost equal to that of the pn-junction with a curvature around the photo detecting surface reducing the diffusion process, making the device ideal for APD very small in the photo detecting diameter.
COPYRIGHT: (C)1980,JPO&Japio
JP14534678A 1978-11-27 1978-11-27 Semiconductor photo-detector Granted JPS5572084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14534678A JPS5572084A (en) 1978-11-27 1978-11-27 Semiconductor photo-detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14534678A JPS5572084A (en) 1978-11-27 1978-11-27 Semiconductor photo-detector

Publications (2)

Publication Number Publication Date
JPS5572084A true JPS5572084A (en) 1980-05-30
JPS6244431B2 JPS6244431B2 (en) 1987-09-21

Family

ID=15383049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14534678A Granted JPS5572084A (en) 1978-11-27 1978-11-27 Semiconductor photo-detector

Country Status (1)

Country Link
JP (1) JPS5572084A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55162280A (en) * 1979-06-01 1980-12-17 Mitsubishi Electric Corp Photodiode
JPS57159072A (en) * 1981-03-25 1982-10-01 Nippon Telegr & Teleph Corp <Ntt> Manufacture of avalanche photodiode
JPS57159507U (en) * 1981-03-30 1982-10-06
JPS57190370A (en) * 1981-05-18 1982-11-22 Fujitsu Ltd Semiconductor light receiving element
JPS57198668A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Light receiving element
US4481523A (en) * 1980-12-02 1984-11-06 Fujitsu Limited Avalanche photodiodes
US4625226A (en) * 1983-08-18 1986-11-25 Standard Telephones And Cables Public Limited Company Photodetector
US5053837A (en) * 1987-09-16 1991-10-01 Sumitomo Electric Industries, Ltd. Ingaas/inp type pin photodiodes
JPH03293780A (en) * 1990-04-11 1991-12-25 Toshiba Corp Semiconductor photodetector
US5132747A (en) * 1981-09-28 1992-07-21 Kokusai Denshin Denwa Kabushiki Kaisha Avalanche photo diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513957A (en) * 1978-07-17 1980-01-31 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513957A (en) * 1978-07-17 1980-01-31 Nec Corp Semiconductor device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55162280A (en) * 1979-06-01 1980-12-17 Mitsubishi Electric Corp Photodiode
US4481523A (en) * 1980-12-02 1984-11-06 Fujitsu Limited Avalanche photodiodes
JPS57159072A (en) * 1981-03-25 1982-10-01 Nippon Telegr & Teleph Corp <Ntt> Manufacture of avalanche photodiode
JPS6225420Y2 (en) * 1981-03-30 1987-06-29
JPS57159507U (en) * 1981-03-30 1982-10-06
JPS57190370A (en) * 1981-05-18 1982-11-22 Fujitsu Ltd Semiconductor light receiving element
JPS6259475B2 (en) * 1981-05-18 1987-12-11 Fujitsu Ltd
JPH0231509B2 (en) * 1981-06-01 1990-07-13 Fujitsu Ltd
JPS57198668A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Light receiving element
US5132747A (en) * 1981-09-28 1992-07-21 Kokusai Denshin Denwa Kabushiki Kaisha Avalanche photo diode
US4625226A (en) * 1983-08-18 1986-11-25 Standard Telephones And Cables Public Limited Company Photodetector
US5053837A (en) * 1987-09-16 1991-10-01 Sumitomo Electric Industries, Ltd. Ingaas/inp type pin photodiodes
JPH03293780A (en) * 1990-04-11 1991-12-25 Toshiba Corp Semiconductor photodetector
US5157473A (en) * 1990-04-11 1992-10-20 Kabushiki Kaisha Toshiba Avalanche photodiode having guard ring

Also Published As

Publication number Publication date
JPS6244431B2 (en) 1987-09-21

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