JPS5561078A - Manufacture of guard ring-fitted photodiode - Google Patents

Manufacture of guard ring-fitted photodiode

Info

Publication number
JPS5561078A
JPS5561078A JP13412678A JP13412678A JPS5561078A JP S5561078 A JPS5561078 A JP S5561078A JP 13412678 A JP13412678 A JP 13412678A JP 13412678 A JP13412678 A JP 13412678A JP S5561078 A JPS5561078 A JP S5561078A
Authority
JP
Japan
Prior art keywords
guard ring
fitted
type
photodiode
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13412678A
Other languages
Japanese (ja)
Inventor
Nobuhiko Susa
Yoshihisa Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13412678A priority Critical patent/JPS5561078A/en
Publication of JPS5561078A publication Critical patent/JPS5561078A/en
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To improve sensitivity and increase S/N, by forming a p+n-type structure using III-V group compound semiconductor, such as InGaAs, when a photodiode fitted with a guard ring is made.
CONSTITUTION: On n+-type semiconductor substrate 31, made of InP, GaAs, n-type layer 32 and P-type layer 33, of the same compound semiconductor, are laminated and an epitaxial layer is grown. By using SiO2 film 35 provided in the center of the surface as mask, p+-type guard ring region 36, which enters layer 32 on both sides, is formed by diffusing Zn. Next, by operating mesa etching, this region is made into mesa shape, and guard ring electrode 35, which is in contact with region 36 and expands to the edge of film 35, is fitted. Since the guard ring- fitted photodiode is made a p+-type structure, it is possible to obtain sufficient sensitivity even with respect to long waves of about 1.3μm, and further the dark current is reduced and S/N is improved.
COPYRIGHT: (C)1980,JPO&Japio
JP13412678A 1978-10-31 1978-10-31 Manufacture of guard ring-fitted photodiode Pending JPS5561078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13412678A JPS5561078A (en) 1978-10-31 1978-10-31 Manufacture of guard ring-fitted photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13412678A JPS5561078A (en) 1978-10-31 1978-10-31 Manufacture of guard ring-fitted photodiode

Publications (1)

Publication Number Publication Date
JPS5561078A true JPS5561078A (en) 1980-05-08

Family

ID=15121063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13412678A Pending JPS5561078A (en) 1978-10-31 1978-10-31 Manufacture of guard ring-fitted photodiode

Country Status (1)

Country Link
JP (1) JPS5561078A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766678A (en) * 1980-10-13 1982-04-22 Nippon Telegr & Teleph Corp <Ntt> 3-5 group compound semiconductor avalanche photodiode
JPS57159072A (en) * 1981-03-25 1982-10-01 Nippon Telegr & Teleph Corp <Ntt> Manufacture of avalanche photodiode
JPS57159507U (en) * 1981-03-30 1982-10-06

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49122293A (en) * 1973-03-22 1974-11-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49122293A (en) * 1973-03-22 1974-11-22

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766678A (en) * 1980-10-13 1982-04-22 Nippon Telegr & Teleph Corp <Ntt> 3-5 group compound semiconductor avalanche photodiode
JPS57159072A (en) * 1981-03-25 1982-10-01 Nippon Telegr & Teleph Corp <Ntt> Manufacture of avalanche photodiode
JPS57159507U (en) * 1981-03-30 1982-10-06
JPS6225420Y2 (en) * 1981-03-30 1987-06-29

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