JPS5591184A - Photodiode - Google Patents
PhotodiodeInfo
- Publication number
- JPS5591184A JPS5591184A JP16499478A JP16499478A JPS5591184A JP S5591184 A JPS5591184 A JP S5591184A JP 16499478 A JP16499478 A JP 16499478A JP 16499478 A JP16499478 A JP 16499478A JP S5591184 A JPS5591184 A JP S5591184A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- type
- film
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To reduce dark current in a photodiode by coating selectively the surface if a Ge substrate with GaAs layer.
CONSTITUTION: As or the like is diffused in a p-type Ge substrate to thereby form an n-type guard ring 3, and a p-type GaAs layer 11 is epitaxially formed in the substrate 1. Then, the layer 11 on the ring 3 is perforated with an opening, and coated selectively with SiO2 film 4 by CVD process. With the film 4 as a mask Se ion is implanted to the substrate to thereby form the GaAs layer 12 at the opening of the film 4 and the lower Ge substrate region 1 into n+-type layers. Then, a connecting opening is perforated to the layer 3 at the periphery of the layer 12, and an aluminum electrode 6 is connected thereto. Thus, the portion expanding the depletion layer on the surface of the Ge substrate is coated with the GaAs to thereby restrict the recoupling to thus largely reduce the dark current.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16499478A JPS5591184A (en) | 1978-12-27 | 1978-12-27 | Photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16499478A JPS5591184A (en) | 1978-12-27 | 1978-12-27 | Photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5591184A true JPS5591184A (en) | 1980-07-10 |
Family
ID=15803813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16499478A Pending JPS5591184A (en) | 1978-12-27 | 1978-12-27 | Photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5591184A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5775761U (en) * | 1980-10-29 | 1982-05-11 | ||
| JPS5864071A (en) * | 1981-10-13 | 1983-04-16 | Nec Corp | Semiconductor photodetector |
| US7271376B2 (en) | 2002-07-11 | 2007-09-18 | Qinetiq Limited | Avalanche photodiode with reduced sidewall defects |
| US9755100B2 (en) | 2016-01-29 | 2017-09-05 | International Business Machines Corporation | Reducing dark current in germanium photodiodes by electrical over-stress |
| WO2019188244A1 (en) * | 2018-03-27 | 2019-10-03 | パナソニックＩｐマネジメント株式会社 | Optical detector |
-
1978
- 1978-12-27 JP JP16499478A patent/JPS5591184A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5775761U (en) * | 1980-10-29 | 1982-05-11 | ||
| JPS5864071A (en) * | 1981-10-13 | 1983-04-16 | Nec Corp | Semiconductor photodetector |
| US7271376B2 (en) | 2002-07-11 | 2007-09-18 | Qinetiq Limited | Avalanche photodiode with reduced sidewall defects |
| US9755100B2 (en) | 2016-01-29 | 2017-09-05 | International Business Machines Corporation | Reducing dark current in germanium photodiodes by electrical over-stress |
| US9853179B2 (en) | 2016-01-29 | 2017-12-26 | International Business Machines Corporation | Reducing dark current in germanium photodiodes by electrical over-stress |
| US10043938B2 (en) | 2016-01-29 | 2018-08-07 | International Business Machines Corporation | Reducing dark current in germanium photodiodes by electrical over-stress |
| US10236407B2 (en) | 2016-01-29 | 2019-03-19 | International Business Machines Corporation | Reducing dark current in germanium photodiodes by electrical over-stress |
| US10608138B2 (en) | 2016-01-29 | 2020-03-31 | International Business Machines Corporation | Reducing dark current in germanium photodiodes by electrical over-stress |
| WO2019188244A1 (en) * | 2018-03-27 | 2019-10-03 | パナソニックＩｐマネジメント株式会社 | Optical detector |
| JPWO2019188244A1 (en) * | 2018-03-27 | 2021-03-25 | パナソニックＩｐマネジメント株式会社 | Photodetector |
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