JPS5585077A - Semi-conductor apparatus - Google Patents
Semi-conductor apparatusInfo
- Publication number
- JPS5585077A JPS5585077A JP15897878A JP15897878A JPS5585077A JP S5585077 A JPS5585077 A JP S5585077A JP 15897878 A JP15897878 A JP 15897878A JP 15897878 A JP15897878 A JP 15897878A JP S5585077 A JPS5585077 A JP S5585077A
- Authority
- JP
- Japan
- Prior art keywords
- type area
- zener voltage
- semi
- area
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To obtain a stabilized low Zener voltage by forming n--type area on n+-type area, forming p+-type area inside n+-type area through n--type area and further providing p--type area.
CONSTITUTION: n--Type area 11 is formed on n+-type area 10 and p+-type area 12 is formed inside n+-type area 10 through n--type area 11. Also p--type area 13 is formed including a surface sealing part between p+-type area 12 and n--type area 11. Due to p+-n--junction is formed between p+-type area 12 and n+-type area 10, pn-junction has low Zener voltage. In addition, on account of inverse layer not being formed on the surface of p--type area 13, the reproducibility of stabilized Zener voltage is satisfactory.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15897878A JPS5585077A (en) | 1978-12-21 | 1978-12-21 | Semi-conductor apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15897878A JPS5585077A (en) | 1978-12-21 | 1978-12-21 | Semi-conductor apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5585077A true JPS5585077A (en) | 1980-06-26 |
Family
ID=15683526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15897878A Pending JPS5585077A (en) | 1978-12-21 | 1978-12-21 | Semi-conductor apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5585077A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4742377A (en) * | 1985-02-21 | 1988-05-03 | General Instrument Corporation | Schottky barrier device with doped composite guard ring |
US4833509A (en) * | 1983-10-31 | 1989-05-23 | Burr-Brown Corporation | Integrated circuit reference diode and fabrication method therefor |
US4961099A (en) * | 1988-02-12 | 1990-10-02 | Asea Brown Boveri Ltd. | High-power GTO thyristor and also a method for its manufacture |
US5093693A (en) * | 1987-10-15 | 1992-03-03 | Bbc Brown Boveri Ag | Pn-junction with guard ring |
US5338966A (en) * | 1989-09-21 | 1994-08-16 | Toko Kabushiki Kaisha | Variable capacitance diode device |
JP2007059800A (en) * | 2005-08-26 | 2007-03-08 | Fuji Electric Device Technology Co Ltd | Vertical zener diode and manufacturing method thereof |
JP2014179650A (en) * | 2014-05-30 | 2014-09-25 | Toshiba Corp | Diode |
-
1978
- 1978-12-21 JP JP15897878A patent/JPS5585077A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4833509A (en) * | 1983-10-31 | 1989-05-23 | Burr-Brown Corporation | Integrated circuit reference diode and fabrication method therefor |
US4742377A (en) * | 1985-02-21 | 1988-05-03 | General Instrument Corporation | Schottky barrier device with doped composite guard ring |
US5093693A (en) * | 1987-10-15 | 1992-03-03 | Bbc Brown Boveri Ag | Pn-junction with guard ring |
US4961099A (en) * | 1988-02-12 | 1990-10-02 | Asea Brown Boveri Ltd. | High-power GTO thyristor and also a method for its manufacture |
US5338966A (en) * | 1989-09-21 | 1994-08-16 | Toko Kabushiki Kaisha | Variable capacitance diode device |
JP2007059800A (en) * | 2005-08-26 | 2007-03-08 | Fuji Electric Device Technology Co Ltd | Vertical zener diode and manufacturing method thereof |
JP2014179650A (en) * | 2014-05-30 | 2014-09-25 | Toshiba Corp | Diode |
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