JPS5864071A - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- JPS5864071A JPS5864071A JP56163016A JP16301681A JPS5864071A JP S5864071 A JPS5864071 A JP S5864071A JP 56163016 A JP56163016 A JP 56163016A JP 16301681 A JP16301681 A JP 16301681A JP S5864071 A JPS5864071 A JP S5864071A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- gallium arsenide
- thick
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000004347 surface barrier Methods 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- ZNKMCMOJCDFGFT-UHFFFAOYSA-N gold titanium Chemical class [Ti].[Au] ZNKMCMOJCDFGFT-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 description 12
- 238000001228 spectrum Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910001258 titanium gold Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体受光装置に関し、特に、特定の波長より
も長い波長域にのみ感度を有する装置にか＼わるもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor light receiving device, and particularly to a device that is sensitive only to a wavelength range longer than a specific wavelength.
半導体受光装置は、現在様々な応用範囲で広く用いられ
ているが、そのか′＆ｐの応用例に於いて。Semiconductor photodetectors are currently widely used in a variety of applications, including the following applications.
対象光源（信号源）に、発光ダイオード等の単色光光源
を使用する場合が多い。第１図は、この代表例として、
発光素子としてガリ′ウム砒素赤外発光ダイオードを用
い受光素子としてＰＮ接合型シリコン受光ダイオードを
用いた時のスペクトルの関係を示したものである。この
場合、赤外発光ダイオードは中心波長９４０ｎｍ 、半
値巾２Ｑｎｍの発光スペクトル１を有するのに対し、シ
リコン受光ダ°イオードは最大感度が波長９８０ｎｍＫ
ある受光スペクトル２の如き感度を持って“いる。しか
しシリコン受光ダイオードは波長的９００ ｎｍ以下で
明らかに「不要感度」とも言うべき不必要な受光感度を
有しており、対象光源以外の周囲光によりこの発光−受
光系の信号対雑音比を低下させる原因となっている。A monochromatic light source such as a light emitting diode is often used as the target light source (signal source). Figure 1 shows a typical example of this.
This figure shows the spectral relationship when a gallium arsenide infrared light emitting diode is used as a light emitting element and a PN junction type silicon light receiving diode is used as a light receiving element. In this case, an infrared light emitting diode has an emission spectrum 1 with a center wavelength of 940 nm and a half width of 2 Q nm, whereas a silicon light receiving diode has a maximum sensitivity at a wavelength of 980 nm.
However, silicon photodiodes have an unnecessary light-receiving sensitivity that can be called "unnecessary sensitivity" at wavelengths of 900 nm or less, and are sensitive to ambient light other than the target light source. This causes a reduction in the signal-to-noise ratio of this light emitting-light receiving system.
そこで通常用いられるのは受光素子に適当なフィルタを
前置し不要感度を抑制する方法で、その−例として黒色
染料を含むフィルタをシリコン受光ダイオードの前に設
けて可視域感度を低下させた時の受光スペクトル３を第
１図に示した。しかし、この染料フィルタを用いる方法
では受光スペクトル３に示すように遮断波長を７２０１
ｍよりも長くすることは困難であって、波長７２０〜Ｑ
ＱＱｎｍ域に依然として大きな不要感度が存在する。Therefore, a method that is usually used is to suppress unnecessary sensitivity by placing an appropriate filter in front of the photodetector.For example, a filter containing black dye is placed in front of the silicon photodetector diode to reduce the sensitivity in the visible range. The received light spectrum 3 is shown in FIG. However, in the method using this dye filter, the cutoff wavelength is 7201 as shown in reception spectrum 3.
It is difficult to make the wavelength longer than m, and the wavelength is 720~Q
There is still a large amount of unnecessary sensitivity in the QQnm region.
本発明はこの様な不要感度除去を目的としたものであり
、特に遮断波長的８５０ｎｍの良好なフィルタ特性を内
蔵した受光装置を得る事、にある。The purpose of the present invention is to eliminate such unnecessary sensitivity, and in particular, to obtain a light receiving device incorporating good filter characteristics at a cutoff wavelength of 850 nm.
本発明によれば、受光素子表面にガリウム砒素の薄膜を
直接被着しこのガリウム砒素薄膜がフィルタとし先手導
体受光装置を得る。According to the present invention, a thin film of gallium arsenide is directly deposited on the surface of a light receiving element, and this thin film of gallium arsenide is used as a filter to obtain a leading conductor light receiving device.
次に、図面を参照して本発明をより詳細に説明する。Next, the present invention will be explained in more detail with reference to the drawings.
第２図は本発明の一実施例による半導体受光装置の断面
図を示したものである。比抵抗８０ｏ〜１．２００ｎ−
ｍのＮ型半導体ウェハー４に、通常の選択拡散によハ厚
さ０．５μのＰ型層５を設け、その表面に開口部を有す
る８ｉ０１ 層６を通じてアル１＝ウム電極７被着し、
これをＰ側電極として形成した。又、裏面には厚さ０．
３ａのＮ中層８を全面拡散により形成した後、チタン−
全系電極９を蒸着し、Ｎ側電極とした。この後、半導体
ウェハー４を真空蒸着機に入れ、比抵抗１０’ｎ−αの
半絶縁性ガリウム砒素を蒸着源として、真空度２ Ｘ
１０−’Ｔｏｒｒ、で抵抗加熱によりガリウム砒素を蒸
着した。この時、半導体クエハー４を加熱しっ＼、且つ
ウェハー４の温度が３５０〜４００℃となる様、基板加
熱及び蒸着源とウェハー４の位置関係に注意を払り丸、
この様にして厚さ３μの多結晶ガリウム砒素層１０を半
導体ウェハー４上の８１０．層ｑ上およびアル著二りム
電極γ上に形成した。しかる後、アルミニーラム電Ｍ７
の、外部電極引出線部上のガリウム砒素層１ｏを硫酸：
過酸化水素：水＝１：１：１なる組成の工、チンダ液で
選択的に除去した。この時゛ガリウム砒素層１ｏはＰ型
層５上に残存せしめ牡は曳いので、他の部分は除去して
もかまわ壜い。FIG. 2 shows a sectional view of a semiconductor light receiving device according to an embodiment of the present invention. Specific resistance 80o~1.200n-
A P-type layer 5 with a thickness of 0.5 μm is provided on an N-type semiconductor wafer 4 of 1.0 m by ordinary selective diffusion, and an Al1=Um electrode 7 is deposited through an 8I01 layer 6 having an opening on its surface.
This was formed as a P-side electrode. Also, the back side has a thickness of 0.
After forming the N middle layer 8 of 3a by full-surface diffusion, titanium-
A whole system electrode 9 was deposited to serve as an N-side electrode. Thereafter, the semiconductor wafer 4 was placed in a vacuum evaporator, and the degree of vacuum was 2X using semi-insulating gallium arsenide with a specific resistance of 10'n-α as the evaporation source.
Gallium arsenide was deposited by resistance heating at 10-' Torr. At this time, the semiconductor wafer 4 is heated, and attention is paid to the substrate heating and the positional relationship between the vapor deposition source and the wafer 4 so that the temperature of the wafer 4 is 350 to 400°C.
In this way, the polycrystalline gallium arsenide layer 10 with a thickness of 3 μm is deposited on the semiconductor wafer 4 at 810. It was formed on the layer q and the aluminum electrode γ. After that, Aluminum Ramden M7
The gallium arsenide layer 1o on the external electrode lead wire part is treated with sulfuric acid:
It was selectively removed using a tinde solution with a composition of hydrogen peroxide:water=1:1:1. At this time, since the gallium arsenide layer 1o remains on the P-type layer 5 and is removed, other portions may be removed.
こ＼で、上記半導体受光装置の製造条件につき、更に詳
述すれば次の通りである。Now, the manufacturing conditions of the semiconductor light receiving device will be described in more detail as follows.
先ず蒸着時の半導体クエハー４の加熱温度については、
前述の３５０〜４００℃の温度範囲より高い温度では、
より良好な多結晶ガリウム砒素膜１０か形成されるが、
電＆７のアル建ニウムとガリウム砒素膜ｌＯとの反応が
生じ、選択的にガリウム−砒素を除去し先後もアル１＝
ウム電極７の表面に変質を生じ、外部引出電極線の接続
技術上困難を生じ、−万より低い温度では得られたガリ
ウム砒素膜ｌＯが光学的に不満足でフィルターとしての
連断波長を高くできなかった。First, regarding the heating temperature of the semiconductor wafer 4 during vapor deposition,
At temperatures higher than the aforementioned temperature range of 350-400°C,
Although a better polycrystalline gallium arsenide film 10 is formed,
A reaction occurs between the aluminum and the gallium arsenide film lO, selectively removing the gallium and arsenic, and subsequently forming the aluminum
This causes deterioration of the surface of the gallium electrode 7, which causes difficulties in connecting the external lead electrode wire, and at temperatures lower than -10,000, the obtained gallium arsenide film 10 is optically unsatisfactory and cannot have a high continuous wavelength as a filter. There wasn't.
又、ガリウム砒素膜ｌＯの膜厚について社厚さ２．５μ
以下では阻止域（〜８５Ｑｎｍ以下）に於いても比較的
高い光透過率を示し、一方厚さ５μ以上では、しばしば
クラックを生じたので、２．５〜５μの厚さが良く、最
適厚さとして３μを選んだ。In addition, the film thickness of the gallium arsenide film 1O is 2.5 μm.
Below, it showed a relatively high light transmittance even in the stopband (~85Qnm or less), while at a thickness of 5μ or more, cracks often occurred, so a thickness of 2.5 to 5μ is good, and the optimal thickness is 3μ was selected as the
第３図は、この様にして得た受光素子片を外囲器として
エポキシ系樹脂で包み込んだ受光装置の相対感度１１を
示したものである。FIG. 3 shows the relative sensitivity 11 of a light receiving device in which the thus obtained light receiving element piece is wrapped in an epoxy resin as an envelope.
第３図の縦軸は相対感度を示したもので、第１図の縦軸
（感度）と等しくとっである。第３図から明らかな如く
、上記半導体受光装置では、約８５０ｎｍ以下の波長で
の感度は極めて低く、且つ、最大感度は染料フィルタを
前置した物（第１図の受光スペクトル３）と遜色ない事
がわかる。The vertical axis in FIG. 3 indicates relative sensitivity, which is the same as the vertical axis (sensitivity) in FIG. As is clear from Figure 3, the sensitivity of the above semiconductor photodetector at wavelengths of approximately 850 nm or less is extremely low, and the maximum sensitivity is comparable to that of a device with a dye filter in front (light reception spectrum 3 in Figure 1). I understand.
以上、ＰＮ接合型受光部を持つ実施例について述べたが
１表面障壁型受光部を有する装置についても本発明の趣
旨を損う事な〈実施出来るのは明らかである。Although an embodiment having a PN junction type light receiving section has been described above, it is clear that a device having a single surface barrier type light receiving section can be implemented without detracting from the spirit of the present invention.
第１図は、従来の受光装置の受光スペクトル及び対象光
源の発光スペクトルを示す図である。第２図は本発明の
一冥施例による半導体受光装置の断面図、第３図は上記
実施例の受光スペクトルを示す図である。
１・・・・・・対象光源発光スペクトル、２．３・・・
・・・従来の受光素子の受光スペクトル、４・・・・・
・Ｎ型層、５・・・・・・Ｐ型層、６・・・・・・８ｉ
０．膜、７・・・・・・アル建二りム電極、訃・・・・
・炉層、９・・・・・・チタン−金電極、１０・・・・
・・ガリウム砒素層、１１・・・・・・本実施例による
受光装置の受光スペクトル。
５００ＱｒｒＬ’？００ｎ、 １０００．、。
ｉ七
第１図
第２図
第３図FIG. 1 is a diagram showing a light reception spectrum of a conventional light receiving device and an emission spectrum of a target light source. FIG. 2 is a sectional view of a semiconductor light receiving device according to one embodiment of the present invention, and FIG. 3 is a diagram showing a light receiving spectrum of the above embodiment. 1...Target light source emission spectrum, 2.3...
... Light receiving spectrum of conventional light receiving element, 4...
・N-type layer, 5...P-type layer, 6...8i
0. Membrane, 7... Aluminum membrane electrode, 7...
・Furnace layer, 9...Titanium-gold electrode, 10...
...Gallium arsenide layer, 11... Light reception spectrum of the light receiving device according to this example. 500QrrL'? 00n, 1000. ,. i7Figure 1Figure 2Figure 3
Claims (1)
光素子に於いて、ガリウム砒素層を該受光部上に設けた
ことを特徴とする半導体受光装置。1. A semiconductor light receiving device comprising a silicon light receiving element having a PN junction type or surface barrier type light receiving portion, and a gallium arsenide layer provided on the light receiving portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56163016A JPS5864071A (en) | 1981-10-13 | 1981-10-13 | Semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56163016A JPS5864071A (en) | 1981-10-13 | 1981-10-13 | Semiconductor photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5864071A true JPS5864071A (en) | 1983-04-16 |
Family
ID=15765586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56163016A Pending JPS5864071A (en) | 1981-10-13 | 1981-10-13 | Semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5864071A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6088569U (en) * | 1983-11-22 | 1985-06-18 | 同和鉱業株式会社 | Photodetector with infrared transmission filter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5051285A (en) * | 1973-09-05 | 1975-05-08 | ||
| JPS5591184A (en) * | 1978-12-27 | 1980-07-10 | Fujitsu Ltd | Photodiode |
-
1981
- 1981-10-13 JP JP56163016A patent/JPS5864071A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5051285A (en) * | 1973-09-05 | 1975-05-08 | ||
| JPS5591184A (en) * | 1978-12-27 | 1980-07-10 | Fujitsu Ltd | Photodiode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6088569U (en) * | 1983-11-22 | 1985-06-18 | 同和鉱業株式会社 | Photodetector with infrared transmission filter |
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