JPS5613780A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5613780A JPS5613780A JP9019379A JP9019379A JPS5613780A JP S5613780 A JPS5613780 A JP S5613780A JP 9019379 A JP9019379 A JP 9019379A JP 9019379 A JP9019379 A JP 9019379A JP S5613780 A JPS5613780 A JP S5613780A
- Authority
- JP
- Japan
- Prior art keywords
- film
- window
- substrate
- region
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 7
- 150000002500 ions Chemical class 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To improve the quantum efficiency of a germanium element by coating an Si3N4 film for preventing light reflection on a semiconductor substrate when producing a light receiving element and implanting impurity ions through the film to form a PN-junction which has a photoelectric converting function in the substrate. CONSTITUTION:On a P-type germanium substrate 1, an SiO2 film 2 is vapor- grown, a ring-shaped diffusion window 3 is opened by etching and an N-type guard ring 4 is diffusion-formed in the substrate 1 under the window. Next, only the film 2 of the region surrounded by the window 3 is removed, and by using the exposed surface of the substrate 1 as an ion implanting window 5, an Si3N4 film 6 which will later become a light reflection preventing film is vapor-grown all over the surface including the window. Then the part of the surface except the window 5 is covered with a resist film 7, and by using it as a mask, N-type impurity ions are implanted into the substrate 1 to form an N<+>-type region 9, the region 9 is activated sufficiently by removing the layer 7 and heat-treating to produce a perfect PN-junction with a photoelectric converting function between the region and the substrate 1. Next, a window 10 is opened in the film 6, and an Al electrode 11 contacting the end of the region 9 is coated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9019379A JPS5613780A (en) | 1979-07-16 | 1979-07-16 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9019379A JPS5613780A (en) | 1979-07-16 | 1979-07-16 | Preparation of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5613780A true JPS5613780A (en) | 1981-02-10 |
Family
ID=13991638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9019379A Pending JPS5613780A (en) | 1979-07-16 | 1979-07-16 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5613780A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4400442A (en) * | 1981-07-13 | 1983-08-23 | Rockwell International Corporation | Fiber reinforced electroformed superplastic nickel-cobalt matrices |
| JPS59178799A (en) * | 1983-03-29 | 1984-10-11 | 三菱化学株式会社 | Housing with excellent electromagnetic wave shielding property or method of producing same member |
| US4515866A (en) * | 1981-03-31 | 1985-05-07 | Sumitomo Chemical Company, Limited | Fiber-reinforced metallic composite material |
| US4601955A (en) * | 1984-07-26 | 1986-07-22 | Nippon Gakki Seizo Kabushiki Kaisha | Composite material for decorative applications |
| US5578386A (en) * | 1991-10-23 | 1996-11-26 | Inco Limited | Nickel coated carbon preforms |
-
1979
- 1979-07-16 JP JP9019379A patent/JPS5613780A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4515866A (en) * | 1981-03-31 | 1985-05-07 | Sumitomo Chemical Company, Limited | Fiber-reinforced metallic composite material |
| US4400442A (en) * | 1981-07-13 | 1983-08-23 | Rockwell International Corporation | Fiber reinforced electroformed superplastic nickel-cobalt matrices |
| JPS59178799A (en) * | 1983-03-29 | 1984-10-11 | 三菱化学株式会社 | Housing with excellent electromagnetic wave shielding property or method of producing same member |
| US4601955A (en) * | 1984-07-26 | 1986-07-22 | Nippon Gakki Seizo Kabushiki Kaisha | Composite material for decorative applications |
| US5578386A (en) * | 1991-10-23 | 1996-11-26 | Inco Limited | Nickel coated carbon preforms |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4141756A (en) | Method of making a gap UV photodiode by multiple ion-implantations | |
| JPS5613780A (en) | Preparation of semiconductor device | |
| US4463368A (en) | Silicon avalanche photodiode with low keff | |
| EP0076143A2 (en) | Avalanche photodiode | |
| JPS5615035A (en) | Manufacture of semiconductor device | |
| JPS55146967A (en) | Semiconductor ic device | |
| JPS5591184A (en) | Photodiode | |
| JPS54109765A (en) | Manufacture of semiconductor device | |
| JPS6414916A (en) | Manufacture of semiconductor device | |
| JPS57155784A (en) | Photodiode | |
| JPS55141766A (en) | Manufacturing of semiconductor light position detector | |
| JPS5541738A (en) | Preparation of semiconductor device | |
| JPS5613775A (en) | Semiconductor light receiving device | |
| JPS57201061A (en) | Manufacture of thin semiconductor film resistor | |
| JPS5649523A (en) | Manufacture of semiconductor device | |
| JPS5568650A (en) | Manufacturing method of semiconductor device | |
| JPS5513942A (en) | Manufacturing method of semiconductor light receiving element | |
| JPS5538040A (en) | High-voltage-resisting semiconductor device | |
| JPS6446924A (en) | Manufacture of semiconductor device | |
| JPS60178674A (en) | Manufacture of avalanche photo diode | |
| JPS5460881A (en) | Optical action type semiconductor device | |
| JPS5487470A (en) | Manufacture of semiconductor device | |
| JPS54101663A (en) | Aluminum diffusion method | |
| JPS5529187A (en) | Production of semiconductor device | |
| JPS5559738A (en) | Preparation of semiconductor device |