JPS57155784A - Photodiode - Google Patents

Photodiode

Info

Publication number
JPS57155784A
JPS57155784A JP56040336A JP4033681A JPS57155784A JP S57155784 A JPS57155784 A JP S57155784A JP 56040336 A JP56040336 A JP 56040336A JP 4033681 A JP4033681 A JP 4033681A JP S57155784 A JPS57155784 A JP S57155784A
Authority
JP
Japan
Prior art keywords
conductivity type
type
region
diffusion
small area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56040336A
Other languages
Japanese (ja)
Inventor
Toshinori Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56040336A priority Critical patent/JPS57155784A/en
Publication of JPS57155784A publication Critical patent/JPS57155784A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type

Abstract

PURPOSE:To produce photodiodes of high sensibility by diffusion of first conductivity type impurities into a second conductivity type epitaxial layer formed on a first conductivity type semiconductor substrate while a small area of a second conductivity type region is remaining. CONSTITUTION:After the n type silicon film 5 is deposited on the p type silicon substrate 4 by epitaxial growth, a p type region 6 and p<+> region 7 are formed on entire peripheries except the small area 5A on the surface by introducing p type impurities by means of ion implantation, diffusion, etc. while respective conductivity type electrodes are provided. This features allow dark current to be reduced and application under less quantity of light, and besides this can provide higher sensitivity.
JP56040336A 1981-03-23 1981-03-23 Photodiode Pending JPS57155784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56040336A JPS57155784A (en) 1981-03-23 1981-03-23 Photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56040336A JPS57155784A (en) 1981-03-23 1981-03-23 Photodiode

Publications (1)

Publication Number Publication Date
JPS57155784A true JPS57155784A (en) 1982-09-25

Family

ID=12577781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56040336A Pending JPS57155784A (en) 1981-03-23 1981-03-23 Photodiode

Country Status (1)

Country Link
JP (1) JPS57155784A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3637817A1 (en) * 1985-11-08 1987-05-14 Nissan Motor HIGHLY SENSITIVE PHOTODIOD
JPS62200774A (en) * 1986-02-28 1987-09-04 Hitachi Ltd Semiconductor photodetector
JPH01298773A (en) * 1988-05-26 1989-12-01 Yokogawa Electric Corp Semiconductor photodetector
JPH045869A (en) * 1990-04-23 1992-01-09 Sharp Corp Photodiode
EP1032049A3 (en) * 1999-02-25 2005-10-12 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211789A (en) * 1975-07-17 1977-01-28 Toshiba Corp Photoelectric conversion element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211789A (en) * 1975-07-17 1977-01-28 Toshiba Corp Photoelectric conversion element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3637817A1 (en) * 1985-11-08 1987-05-14 Nissan Motor HIGHLY SENSITIVE PHOTODIOD
JPS62200774A (en) * 1986-02-28 1987-09-04 Hitachi Ltd Semiconductor photodetector
JPH01298773A (en) * 1988-05-26 1989-12-01 Yokogawa Electric Corp Semiconductor photodetector
JPH045869A (en) * 1990-04-23 1992-01-09 Sharp Corp Photodiode
EP1032049A3 (en) * 1999-02-25 2005-10-12 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device
US7235831B2 (en) 1999-02-25 2007-06-26 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device

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