JPS5623772A - Photodetecting face plate and its manufacture - Google Patents
Photodetecting face plate and its manufactureInfo
- Publication number
- JPS5623772A JPS5623772A JP9728179A JP9728179A JPS5623772A JP S5623772 A JPS5623772 A JP S5623772A JP 9728179 A JP9728179 A JP 9728179A JP 9728179 A JP9728179 A JP 9728179A JP S5623772 A JPS5623772 A JP S5623772A
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- electrode
- consisted
- adhered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 239000012790 adhesive layer Substances 0.000 abstract 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 abstract 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To obtain the stable photodetecting face having a superior photoelectric characteristic when the photodetecting face of a solid-state imaging device is manufactured by a method wherein a photoconductor layer is put by a low temperature treatment over the surface of a substrate providing with element regions, and a transparent electrode is adhered on it putting a thin film having an improved adhesiveness between them. CONSTITUTION:A p<+>-type region 21 is formed by diffusion on the circumferential part of a p-type Si substrate 20, a thick separating oxide film 22 is adhered on it and the whole surface is covered with an insulating oxide film 28. An opening is provided and an n-type source region 26 and a drain region 27 are formed by diffusion in the surface layer of the substrate 20 surrounded with the film 22. A gate insulating film being buried with an Si gate electrode 25 is provided on the substrate 20 being located between the regions 26, 27, an Al electrode 29 is adhered to the region 27 and an Al electrode 31 is put on an insulating film 30 coming in contact with the region 26. Then the whole face is covered by a low temperatue treatment with a photoconductive layer 31 consisted of Se-As-Te, and a transparent electrode 38 consisted of In2O3 and SnO2 is formed on it putting a improved adhesive layer 35 consisted of CeO2, Nb2O5, Ta2O5, etc., between them.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9728179A JPS5623772A (en) | 1979-08-01 | 1979-08-01 | Photodetecting face plate and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9728179A JPS5623772A (en) | 1979-08-01 | 1979-08-01 | Photodetecting face plate and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5623772A true JPS5623772A (en) | 1981-03-06 |
Family
ID=14188121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9728179A Pending JPS5623772A (en) | 1979-08-01 | 1979-08-01 | Photodetecting face plate and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5623772A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57152174A (en) * | 1981-03-13 | 1982-09-20 | Hitachi Ltd | Manufacture of light receiving device |
| KR100537377B1 (en) * | 1998-12-16 | 2006-03-09 | 엘지.필립스 엘시디 주식회사 | Thin Film Transistor Optical Sensor |
| JP2006270090A (en) * | 2005-02-28 | 2006-10-05 | Fuji Photo Film Co Ltd | Photoelectric transducer and its manufacturing method |
-
1979
- 1979-08-01 JP JP9728179A patent/JPS5623772A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57152174A (en) * | 1981-03-13 | 1982-09-20 | Hitachi Ltd | Manufacture of light receiving device |
| JPH0214790B2 (en) * | 1981-03-13 | 1990-04-10 | Hitachi Ltd | |
| KR100537377B1 (en) * | 1998-12-16 | 2006-03-09 | 엘지.필립스 엘시디 주식회사 | Thin Film Transistor Optical Sensor |
| JP2006270090A (en) * | 2005-02-28 | 2006-10-05 | Fuji Photo Film Co Ltd | Photoelectric transducer and its manufacturing method |
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