JPS57152174A - Manufacture of light receiving device - Google Patents

Manufacture of light receiving device

Info

Publication number
JPS57152174A
JPS57152174A JP56035313A JP3531381A JPS57152174A JP S57152174 A JPS57152174 A JP S57152174A JP 56035313 A JP56035313 A JP 56035313A JP 3531381 A JP3531381 A JP 3531381A JP S57152174 A JPS57152174 A JP S57152174A
Authority
JP
Japan
Prior art keywords
oxide
solid state
state imaging
light
transparent conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56035313A
Other languages
Japanese (ja)
Other versions
JPH0214790B2 (en
Inventor
Yasuo Tanaka
Akira Sasano
Toshihisa Tsukada
Taiji Shimomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56035313A priority Critical patent/JPS57152174A/en
Priority to US06/357,076 priority patent/US4412900A/en
Priority to EP82301284A priority patent/EP0060699B1/en
Priority to CA000398275A priority patent/CA1168739A/en
Priority to DE8282301284T priority patent/DE3276889D1/en
Priority to KR8201078A priority patent/KR860000160B1/en
Publication of JPS57152174A publication Critical patent/JPS57152174A/en
Publication of JPH0214790B2 publication Critical patent/JPH0214790B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To obtain a device excellent in resolving power and spectral sensitivity in the visible region by a method wherein the transparent conductive electrode is subjected to heat treatment for the purpose of slowing down the deterioration of amorphous solid state imaging device capability to respond to light.
CONSTITUTION: Formed on an Si substrate 20 are an MOS device consisting of a source 26, drain 27, gate 25; insulating film 21, 22, 28, and 30; and metal electrode layers 29, 310, and 31. On the other lamination, an amorphous photoconductive film 32 composed chiefly of H containing Si is formed by the reactive sputtering or glow discharge CVD method. Further, a transparent conductive electrode 33 constituted exemplifiedly of In oxide, Sn oxide, Au, Pt, or Ta is built by the sputtering method. After this, the fabricated solid state imaging device is heat treated at temperatures 170∼250°C. This improves electric contact between a photoconductive film and transparent electrode as well as the capability of responding to light.
COPYRIGHT: (C)1982,JPO&Japio
JP56035313A 1981-03-13 1981-03-13 Manufacture of light receiving device Granted JPS57152174A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP56035313A JPS57152174A (en) 1981-03-13 1981-03-13 Manufacture of light receiving device
US06/357,076 US4412900A (en) 1981-03-13 1982-03-11 Method of manufacturing photosensors
EP82301284A EP0060699B1 (en) 1981-03-13 1982-03-12 Method of manufacturing photosensors
CA000398275A CA1168739A (en) 1981-03-13 1982-03-12 Method of manufacturing photosensors
DE8282301284T DE3276889D1 (en) 1981-03-13 1982-03-12 Method of manufacturing photosensors
KR8201078A KR860000160B1 (en) 1981-03-13 1982-03-13 Method of manufacturing photosensors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56035313A JPS57152174A (en) 1981-03-13 1981-03-13 Manufacture of light receiving device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3065969A Division JPH04211171A (en) 1991-03-29 1991-03-29 Photoreceptor element

Publications (2)

Publication Number Publication Date
JPS57152174A true JPS57152174A (en) 1982-09-20
JPH0214790B2 JPH0214790B2 (en) 1990-04-10

Family

ID=12438308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56035313A Granted JPS57152174A (en) 1981-03-13 1981-03-13 Manufacture of light receiving device

Country Status (1)

Country Link
JP (1) JPS57152174A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110179A (en) * 1982-12-16 1984-06-26 Hitachi Ltd Semiconductor device and manufacture thereof
JPS59227173A (en) * 1983-06-08 1984-12-20 Fuji Xerox Co Ltd Photoelectric conversion element and manufacture thereof
JPS60239069A (en) * 1984-05-11 1985-11-27 Sanyo Electric Co Ltd Amorphous solar cell
JPS61168272A (en) * 1985-01-21 1986-07-29 Semiconductor Energy Lab Co Ltd Manufacture of non-single crystal silicon solar battery
JPS61237423A (en) * 1985-04-15 1986-10-22 Kanegafuchi Chem Ind Co Ltd Formation of electrode on amorphus semiconductor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342693A (en) * 1976-09-29 1978-04-18 Rca Corp Semiconductor device including amorphous silicone layer
JPS5539404A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state pickup device
JPS5623772A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Photodetecting face plate and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342693A (en) * 1976-09-29 1978-04-18 Rca Corp Semiconductor device including amorphous silicone layer
JPS5539404A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state pickup device
JPS5623772A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Photodetecting face plate and its manufacture

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110179A (en) * 1982-12-16 1984-06-26 Hitachi Ltd Semiconductor device and manufacture thereof
JPH0481353B2 (en) * 1982-12-16 1992-12-22 Hitachi Ltd
JPS59227173A (en) * 1983-06-08 1984-12-20 Fuji Xerox Co Ltd Photoelectric conversion element and manufacture thereof
JPS60239069A (en) * 1984-05-11 1985-11-27 Sanyo Electric Co Ltd Amorphous solar cell
JPS61168272A (en) * 1985-01-21 1986-07-29 Semiconductor Energy Lab Co Ltd Manufacture of non-single crystal silicon solar battery
JPS61237423A (en) * 1985-04-15 1986-10-22 Kanegafuchi Chem Ind Co Ltd Formation of electrode on amorphus semiconductor

Also Published As

Publication number Publication date
JPH0214790B2 (en) 1990-04-10

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