JPS5539404A - Solid state pickup device - Google Patents

Solid state pickup device

Info

Publication number
JPS5539404A
JPS5539404A JP10006078A JP10006078A JPS5539404A JP S5539404 A JPS5539404 A JP S5539404A JP 10006078 A JP10006078 A JP 10006078A JP 10006078 A JP10006078 A JP 10006078A JP S5539404 A JPS5539404 A JP S5539404A
Authority
JP
Japan
Prior art keywords
thin film
source
noncrystal
pickup device
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10006078A
Other languages
Japanese (ja)
Other versions
JPS5822899B2 (en
Inventor
Toshihisa Tsukada
Eiichi Maruyama
Toru Umaji
Saburo Adaka
Yoshinori Imamura
Akira Sasano
Seiji Kubo
Norio Koike
Shusaku Nagahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP53100060A priority Critical patent/JPS5822899B2/en
Priority to FR7920464A priority patent/FR2433871A1/en
Priority to US06/066,230 priority patent/US4360821A/en
Priority to NLAANVRAGE7906258,A priority patent/NL180969C/en
Priority to DE19792933411 priority patent/DE2933411A1/en
Priority to GB7928748A priority patent/GB2029642B/en
Priority to CA000333976A priority patent/CA1134932A/en
Publication of JPS5539404A publication Critical patent/JPS5539404A/en
Publication of JPS5822899B2 publication Critical patent/JPS5822899B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE: To obtain a high-resolution pickup device featuring the good matching with the visual sensitivity by using the noncrystal material composed mainly of the silicon containing the hydrogen as the photoconductive thin film.
CONSTITUTION: Diffusion regions 27 and 28 functioning as the source and drain regions which form the MOSFET, gate region 26 composed of the polysilicon, electrodes 33 and 31 corresponding to the source and the drain, SiO2 layers 24, 29 and 30 plus P-type diffusion region 23 for element isolation are formed on P-type silicon substrate 20 in correspondence to each picture element and via the ordinary manufactureing process of the semiconductor device. Semiconductor substrate 40 thus constituted is stacked by noncrystal silicon thin film 35 containing the hydrogen via the magnetron-type sputtering device, at the same time bias-use electrode 36 being bonded to the area which does not function as the light reception part. For such elements, only the amount equivalent to the number of the picture elements are arrayed in the matrix formation, and the scanning circuit consisting of the CCD is provided around the matrix.
COPYRIGHT: (C)1980,JPO&Japio
JP53100060A 1978-08-18 1978-08-18 solid-state imaging device Expired JPS5822899B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP53100060A JPS5822899B2 (en) 1978-08-18 1978-08-18 solid-state imaging device
FR7920464A FR2433871A1 (en) 1978-08-18 1979-08-10 SEMICONDUCTOR IMAGE FORMING DEVICE
US06/066,230 US4360821A (en) 1978-08-18 1979-08-13 Solid-state imaging device
NLAANVRAGE7906258,A NL180969C (en) 1978-08-18 1979-08-16 SOLID IMAGE RECORDING DEVICE.
DE19792933411 DE2933411A1 (en) 1978-08-18 1979-08-17 SOLID BODY ILLUSTRATION COMPONENT
GB7928748A GB2029642B (en) 1978-08-18 1979-08-17 Solid state imaging device
CA000333976A CA1134932A (en) 1978-08-18 1979-08-17 Solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53100060A JPS5822899B2 (en) 1978-08-18 1978-08-18 solid-state imaging device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59007131A Division JPS59139772A (en) 1984-01-20 1984-01-20 Solid-state image pickup device

Publications (2)

Publication Number Publication Date
JPS5539404A true JPS5539404A (en) 1980-03-19
JPS5822899B2 JPS5822899B2 (en) 1983-05-12

Family

ID=14263920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53100060A Expired JPS5822899B2 (en) 1978-08-18 1978-08-18 solid-state imaging device

Country Status (1)

Country Link
JP (1) JPS5822899B2 (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156759U (en) * 1980-04-23 1981-11-21
JPS56150879A (en) * 1980-04-23 1981-11-21 Canon Inc Photoelectric converter
JPS5715716U (en) * 1980-07-01 1982-01-27
JPS5721875A (en) * 1980-07-14 1982-02-04 Canon Inc Photosensor
JPS5732182A (en) * 1980-08-04 1982-02-20 Matsushita Electric Ind Co Ltd Solid state image pickup device
JPS5738611U (en) * 1980-08-15 1982-03-02
JPS5742174A (en) * 1980-08-27 1982-03-09 Fuji Photo Film Co Ltd Solid image pickup device
JPS5754377A (en) * 1980-09-18 1982-03-31 Canon Inc Photoelectric converting element
JPS5790981A (en) * 1980-11-27 1982-06-05 Mitsubishi Electric Corp Semiconductor device
JPS5795680A (en) * 1980-12-05 1982-06-14 Hitachi Ltd Photo sensor array device
JPS57136361A (en) * 1981-02-17 1982-08-23 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS57152174A (en) * 1981-03-13 1982-09-20 Hitachi Ltd Manufacture of light receiving device
JPS57173967A (en) * 1981-04-20 1982-10-26 Fuji Photo Film Co Ltd Solid state image pickup device
JPS58118173A (en) * 1982-01-05 1983-07-14 Toshiba Corp Infrared ray detection device
JPS62162357A (en) * 1986-09-05 1987-07-18 Toshiba Corp Solid-state image pickup device
WO2008093834A1 (en) * 2007-02-02 2008-08-07 Rohm Co., Ltd. Solid-state imaging device and method for manufacturing the same

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5759510Y2 (en) * 1980-04-23 1982-12-18
JPS56150879A (en) * 1980-04-23 1981-11-21 Canon Inc Photoelectric converter
JPS56156759U (en) * 1980-04-23 1981-11-21
JPS5715716U (en) * 1980-07-01 1982-01-27
JPS5721875A (en) * 1980-07-14 1982-02-04 Canon Inc Photosensor
JPS6322074B2 (en) * 1980-07-14 1988-05-10 Canon Kk
JPS5732182A (en) * 1980-08-04 1982-02-20 Matsushita Electric Ind Co Ltd Solid state image pickup device
JPH0232833B2 (en) * 1980-08-04 1990-07-24 Matsushita Electric Ind Co Ltd
JPS5738611U (en) * 1980-08-15 1982-03-02
JPS5933282Y2 (en) * 1980-08-15 1984-09-17 松下電器産業株式会社 pressure regulating valve
JPS5742174A (en) * 1980-08-27 1982-03-09 Fuji Photo Film Co Ltd Solid image pickup device
JPS6322465B2 (en) * 1980-09-18 1988-05-12 Canon Kk
JPS5754377A (en) * 1980-09-18 1982-03-31 Canon Inc Photoelectric converting element
JPS5790981A (en) * 1980-11-27 1982-06-05 Mitsubishi Electric Corp Semiconductor device
JPS5795680A (en) * 1980-12-05 1982-06-14 Hitachi Ltd Photo sensor array device
JPS6336144B2 (en) * 1980-12-05 1988-07-19 Hitachi Ltd
JPS57136361A (en) * 1981-02-17 1982-08-23 Semiconductor Energy Lab Co Ltd Semiconductor device
JPH0214790B2 (en) * 1981-03-13 1990-04-10 Hitachi Ltd
JPS57152174A (en) * 1981-03-13 1982-09-20 Hitachi Ltd Manufacture of light receiving device
JPS57173967A (en) * 1981-04-20 1982-10-26 Fuji Photo Film Co Ltd Solid state image pickup device
JPS58118173A (en) * 1982-01-05 1983-07-14 Toshiba Corp Infrared ray detection device
JPS62162357A (en) * 1986-09-05 1987-07-18 Toshiba Corp Solid-state image pickup device
WO2008093834A1 (en) * 2007-02-02 2008-08-07 Rohm Co., Ltd. Solid-state imaging device and method for manufacturing the same
JPWO2008093834A1 (en) * 2007-02-02 2010-05-20 ローム株式会社 Solid-state imaging device and manufacturing method thereof
US8299510B2 (en) 2007-02-02 2012-10-30 Rohm Co., Ltd. Solid state imaging device and fabrication method for the same
US9202962B2 (en) 2007-02-02 2015-12-01 Rohm Co., Ltd. Solid state imaging device and fabrication method for the same

Also Published As

Publication number Publication date
JPS5822899B2 (en) 1983-05-12

Similar Documents

Publication Publication Date Title
JPS5539404A (en) Solid state pickup device
US4862237A (en) Solid state image sensor
JPS5941351B2 (en) Color solid-state image sensor
JPS54111798A (en) Image sensor of charge transfer type
JPS55110476A (en) Solidstate image sensor
JPS57173966A (en) Solid state image pickup device
JPS5559759A (en) Semiconductor device
JPS567480A (en) Film transistor
JPS6258550B2 (en)
JPS56150877A (en) Photoelectric converter
JPS6484663A (en) Contact-type equi-magnification image sensor
JPS6415969A (en) Solid-state image sensing device and manufacture thereof
JPS57115880A (en) Thin film image pickup device in two dimensions
JPS57173969A (en) Solid state image pickup device
Baji et al. Solid-State Color Image Sensor Using Hydrogenated Amorphous Silicon
JPS5870685A (en) Solid-state image pickup device
JPS5742174A (en) Solid image pickup device
JPS57192071A (en) Solid-state image pickup element
JPH0612811B2 (en) Method for manufacturing photoelectric conversion device
KR840001604B1 (en) Method for fabrication a solid - state imaging device
JPH02249272A (en) Semiconductor device
JPS61216358A (en) Visual sensor
JPS5623772A (en) Photodetecting face plate and its manufacture
JPS57109475A (en) Solid image pickup element
JPS6461945A (en) Solid-state image sensing device and manufacture thereof