JPS5539404A - Solid state pickup device - Google Patents
Solid state pickup deviceInfo
- Publication number
- JPS5539404A JPS5539404A JP10006078A JP10006078A JPS5539404A JP S5539404 A JPS5539404 A JP S5539404A JP 10006078 A JP10006078 A JP 10006078A JP 10006078 A JP10006078 A JP 10006078A JP S5539404 A JPS5539404 A JP S5539404A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- source
- noncrystal
- pickup device
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 239000011159 matrix material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000000007 visual effect Effects 0.000 abstract 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE: To obtain a high-resolution pickup device featuring the good matching with the visual sensitivity by using the noncrystal material composed mainly of the silicon containing the hydrogen as the photoconductive thin film.
CONSTITUTION: Diffusion regions 27 and 28 functioning as the source and drain regions which form the MOSFET, gate region 26 composed of the polysilicon, electrodes 33 and 31 corresponding to the source and the drain, SiO2 layers 24, 29 and 30 plus P-type diffusion region 23 for element isolation are formed on P-type silicon substrate 20 in correspondence to each picture element and via the ordinary manufactureing process of the semiconductor device. Semiconductor substrate 40 thus constituted is stacked by noncrystal silicon thin film 35 containing the hydrogen via the magnetron-type sputtering device, at the same time bias-use electrode 36 being bonded to the area which does not function as the light reception part. For such elements, only the amount equivalent to the number of the picture elements are arrayed in the matrix formation, and the scanning circuit consisting of the CCD is provided around the matrix.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53100060A JPS5822899B2 (en) | 1978-08-18 | 1978-08-18 | solid-state imaging device |
FR7920464A FR2433871A1 (en) | 1978-08-18 | 1979-08-10 | SEMICONDUCTOR IMAGE FORMING DEVICE |
US06/066,230 US4360821A (en) | 1978-08-18 | 1979-08-13 | Solid-state imaging device |
NLAANVRAGE7906258,A NL180969C (en) | 1978-08-18 | 1979-08-16 | SOLID IMAGE RECORDING DEVICE. |
DE19792933411 DE2933411A1 (en) | 1978-08-18 | 1979-08-17 | SOLID BODY ILLUSTRATION COMPONENT |
GB7928748A GB2029642B (en) | 1978-08-18 | 1979-08-17 | Solid state imaging device |
CA000333976A CA1134932A (en) | 1978-08-18 | 1979-08-17 | Solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53100060A JPS5822899B2 (en) | 1978-08-18 | 1978-08-18 | solid-state imaging device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59007131A Division JPS59139772A (en) | 1984-01-20 | 1984-01-20 | Solid-state image pickup device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5539404A true JPS5539404A (en) | 1980-03-19 |
JPS5822899B2 JPS5822899B2 (en) | 1983-05-12 |
Family
ID=14263920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53100060A Expired JPS5822899B2 (en) | 1978-08-18 | 1978-08-18 | solid-state imaging device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5822899B2 (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56156759U (en) * | 1980-04-23 | 1981-11-21 | ||
JPS56150879A (en) * | 1980-04-23 | 1981-11-21 | Canon Inc | Photoelectric converter |
JPS5715716U (en) * | 1980-07-01 | 1982-01-27 | ||
JPS5721875A (en) * | 1980-07-14 | 1982-02-04 | Canon Inc | Photosensor |
JPS5732182A (en) * | 1980-08-04 | 1982-02-20 | Matsushita Electric Ind Co Ltd | Solid state image pickup device |
JPS5738611U (en) * | 1980-08-15 | 1982-03-02 | ||
JPS5742174A (en) * | 1980-08-27 | 1982-03-09 | Fuji Photo Film Co Ltd | Solid image pickup device |
JPS5754377A (en) * | 1980-09-18 | 1982-03-31 | Canon Inc | Photoelectric converting element |
JPS5790981A (en) * | 1980-11-27 | 1982-06-05 | Mitsubishi Electric Corp | Semiconductor device |
JPS5795680A (en) * | 1980-12-05 | 1982-06-14 | Hitachi Ltd | Photo sensor array device |
JPS57136361A (en) * | 1981-02-17 | 1982-08-23 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPS57152174A (en) * | 1981-03-13 | 1982-09-20 | Hitachi Ltd | Manufacture of light receiving device |
JPS57173967A (en) * | 1981-04-20 | 1982-10-26 | Fuji Photo Film Co Ltd | Solid state image pickup device |
JPS58118173A (en) * | 1982-01-05 | 1983-07-14 | Toshiba Corp | Infrared ray detection device |
JPS62162357A (en) * | 1986-09-05 | 1987-07-18 | Toshiba Corp | Solid-state image pickup device |
WO2008093834A1 (en) * | 2007-02-02 | 2008-08-07 | Rohm Co., Ltd. | Solid-state imaging device and method for manufacturing the same |
-
1978
- 1978-08-18 JP JP53100060A patent/JPS5822899B2/en not_active Expired
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5759510Y2 (en) * | 1980-04-23 | 1982-12-18 | ||
JPS56150879A (en) * | 1980-04-23 | 1981-11-21 | Canon Inc | Photoelectric converter |
JPS56156759U (en) * | 1980-04-23 | 1981-11-21 | ||
JPS5715716U (en) * | 1980-07-01 | 1982-01-27 | ||
JPS5721875A (en) * | 1980-07-14 | 1982-02-04 | Canon Inc | Photosensor |
JPS6322074B2 (en) * | 1980-07-14 | 1988-05-10 | Canon Kk | |
JPS5732182A (en) * | 1980-08-04 | 1982-02-20 | Matsushita Electric Ind Co Ltd | Solid state image pickup device |
JPH0232833B2 (en) * | 1980-08-04 | 1990-07-24 | Matsushita Electric Ind Co Ltd | |
JPS5738611U (en) * | 1980-08-15 | 1982-03-02 | ||
JPS5933282Y2 (en) * | 1980-08-15 | 1984-09-17 | 松下電器産業株式会社 | pressure regulating valve |
JPS5742174A (en) * | 1980-08-27 | 1982-03-09 | Fuji Photo Film Co Ltd | Solid image pickup device |
JPS6322465B2 (en) * | 1980-09-18 | 1988-05-12 | Canon Kk | |
JPS5754377A (en) * | 1980-09-18 | 1982-03-31 | Canon Inc | Photoelectric converting element |
JPS5790981A (en) * | 1980-11-27 | 1982-06-05 | Mitsubishi Electric Corp | Semiconductor device |
JPS5795680A (en) * | 1980-12-05 | 1982-06-14 | Hitachi Ltd | Photo sensor array device |
JPS6336144B2 (en) * | 1980-12-05 | 1988-07-19 | Hitachi Ltd | |
JPS57136361A (en) * | 1981-02-17 | 1982-08-23 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPH0214790B2 (en) * | 1981-03-13 | 1990-04-10 | Hitachi Ltd | |
JPS57152174A (en) * | 1981-03-13 | 1982-09-20 | Hitachi Ltd | Manufacture of light receiving device |
JPS57173967A (en) * | 1981-04-20 | 1982-10-26 | Fuji Photo Film Co Ltd | Solid state image pickup device |
JPS58118173A (en) * | 1982-01-05 | 1983-07-14 | Toshiba Corp | Infrared ray detection device |
JPS62162357A (en) * | 1986-09-05 | 1987-07-18 | Toshiba Corp | Solid-state image pickup device |
WO2008093834A1 (en) * | 2007-02-02 | 2008-08-07 | Rohm Co., Ltd. | Solid-state imaging device and method for manufacturing the same |
JPWO2008093834A1 (en) * | 2007-02-02 | 2010-05-20 | ローム株式会社 | Solid-state imaging device and manufacturing method thereof |
US8299510B2 (en) | 2007-02-02 | 2012-10-30 | Rohm Co., Ltd. | Solid state imaging device and fabrication method for the same |
US9202962B2 (en) | 2007-02-02 | 2015-12-01 | Rohm Co., Ltd. | Solid state imaging device and fabrication method for the same |
Also Published As
Publication number | Publication date |
---|---|
JPS5822899B2 (en) | 1983-05-12 |
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