JPS57173969A - Solid state image pickup device - Google Patents

Solid state image pickup device

Info

Publication number
JPS57173969A
JPS57173969A JP56059615A JP5961581A JPS57173969A JP S57173969 A JPS57173969 A JP S57173969A JP 56059615 A JP56059615 A JP 56059615A JP 5961581 A JP5961581 A JP 5961581A JP S57173969 A JPS57173969 A JP S57173969A
Authority
JP
Japan
Prior art keywords
layer
amorphous
insulator
substrate
type region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56059615A
Other languages
Japanese (ja)
Inventor
Kazuhiro Kawajiri
Yuzo Mizobuchi
Mitsuo Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP56059615A priority Critical patent/JPS57173969A/en
Publication of JPS57173969A publication Critical patent/JPS57173969A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer

Abstract

PURPOSE:To reduce dark current by a method wherein a photodetector section constituted of an MIS type photodiode consisting of a metal layer, insulator layer, and amorphous Si layer is provided on a scanning circuit provided substrate. CONSTITUTION:A p<+> type region 11 is provided for the formation of a diode and, at the same time, a scanning circuit forming n<+> type region 12 (CCD) or a p<+> type region 13 (BBD) are formed on an n type semiconductor substrate 10. A gate electrode 14 is built on the substrate 10 across an insulator film 15 and an insulator layer 16 is laid on the electrode 14. Next, a metal layer 17 is provided electrically connected to the p<+> type region 11 on the substrate 10 and the metal layer 17 is covered by an insulator layer 18 and then by an amorphous Si layer 19, with the metal layer 17 and insulator 18 and amorphous Si layer 19 constituting an MIS type photodiode. A transparent electrode 20 is laid on the amorphous Si layer 19 for the completion of a solid state image pickup device.
JP56059615A 1981-04-20 1981-04-20 Solid state image pickup device Pending JPS57173969A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56059615A JPS57173969A (en) 1981-04-20 1981-04-20 Solid state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56059615A JPS57173969A (en) 1981-04-20 1981-04-20 Solid state image pickup device

Publications (1)

Publication Number Publication Date
JPS57173969A true JPS57173969A (en) 1982-10-26

Family

ID=13118324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56059615A Pending JPS57173969A (en) 1981-04-20 1981-04-20 Solid state image pickup device

Country Status (1)

Country Link
JP (1) JPS57173969A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016033978A (en) * 2014-07-31 2016-03-10 キヤノン株式会社 Photoelectric conversion device and imaging system
JP2016033972A (en) * 2014-07-31 2016-03-10 キヤノン株式会社 Imaging apparatus and imaging system
JP2016072389A (en) * 2014-09-29 2016-05-09 キヤノン株式会社 Photoelectric converter, and imaging system
JP2016072271A (en) * 2014-09-26 2016-05-09 キヤノン株式会社 Imaging device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016033978A (en) * 2014-07-31 2016-03-10 キヤノン株式会社 Photoelectric conversion device and imaging system
JP2016033972A (en) * 2014-07-31 2016-03-10 キヤノン株式会社 Imaging apparatus and imaging system
US9991305B2 (en) 2014-07-31 2018-06-05 Canon Kabushiki Kaisha Stacked type solid state imaging apparatus and imaging system
US10511751B2 (en) 2014-07-31 2019-12-17 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image pickup system
JP2016072271A (en) * 2014-09-26 2016-05-09 キヤノン株式会社 Imaging device
US10269849B2 (en) 2014-09-26 2019-04-23 Canon Kabushiki Kaisha Imaging device including photoelectric conversion film for continuously covering electrodes having a distance between a counter electrode and a pixel electrode or an intermediate electrode is smaller than a distance between the counter electrode and an insulating member
JP2016072389A (en) * 2014-09-29 2016-05-09 キヤノン株式会社 Photoelectric converter, and imaging system

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