JPS5687379A - Solid image pickup device - Google Patents
Solid image pickup deviceInfo
- Publication number
- JPS5687379A JPS5687379A JP16442179A JP16442179A JPS5687379A JP S5687379 A JPS5687379 A JP S5687379A JP 16442179 A JP16442179 A JP 16442179A JP 16442179 A JP16442179 A JP 16442179A JP S5687379 A JPS5687379 A JP S5687379A
- Authority
- JP
- Japan
- Prior art keywords
- transfer
- electrodes
- vertical
- films
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title 1
- 239000010408 film Substances 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Abstract
PURPOSE:To improve photographic sensitivity by reducing the area of transfer electrodes and expanding that of a light-sensitive section by connecting metal thin films for shading and transfer electrodes wherein transfer pulses are applied to the transfer electrodes through the metal thin films. CONSTITUTION:Photodiodes 6 serving as a light-sensitive section and high-impurity regions 11 are provided on a P type Si substrate and transfer electrodes 7, 8 for charge transfer element as a vertical scanning circuit and write electrodes 9 are also provided through insulators 10. And Al electrode films 13, 14 covering all the regions of the vertical transfer stage of the charge transfer element to shield the light incident upon the transfer stage and also applying vertical transfer clock pulses for transfer in a vertical direction are provided. And contact holes are provided in the insulating films 10 and the electrode films 13, 14 and the transfer electrodes 8, 9 are connected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16442179A JPS5687379A (en) | 1979-12-17 | 1979-12-17 | Solid image pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16442179A JPS5687379A (en) | 1979-12-17 | 1979-12-17 | Solid image pickup device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5687379A true JPS5687379A (en) | 1981-07-15 |
JPH0130306B2 JPH0130306B2 (en) | 1989-06-19 |
Family
ID=15792818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16442179A Granted JPS5687379A (en) | 1979-12-17 | 1979-12-17 | Solid image pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5687379A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61202578A (en) * | 1985-03-06 | 1986-09-08 | Hitachi Ltd | Solid-state image pickup device |
JPS6441586A (en) * | 1987-08-07 | 1989-02-13 | Toshiba Corp | Solid-state image pick-up device |
US5019884A (en) * | 1989-04-07 | 1991-05-28 | Mitsubishi Denki Kabushiki Kaisha | Charge transfer device |
JPH0548069A (en) * | 1991-08-07 | 1993-02-26 | Nec Corp | Solid-state image sensing device |
US5194751A (en) * | 1989-07-17 | 1993-03-16 | Sony Corporation | Structure of solid-state image sensing devices |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5337392A (en) * | 1976-09-17 | 1978-04-06 | Sanyo Electric Co Ltd | Driving pulse supplying method of charge coupled type semiconductor device |
JPS5475927A (en) * | 1977-11-30 | 1979-06-18 | Toshiba Corp | Area sensor |
-
1979
- 1979-12-17 JP JP16442179A patent/JPS5687379A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5337392A (en) * | 1976-09-17 | 1978-04-06 | Sanyo Electric Co Ltd | Driving pulse supplying method of charge coupled type semiconductor device |
JPS5475927A (en) * | 1977-11-30 | 1979-06-18 | Toshiba Corp | Area sensor |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61202578A (en) * | 1985-03-06 | 1986-09-08 | Hitachi Ltd | Solid-state image pickup device |
JPS6441586A (en) * | 1987-08-07 | 1989-02-13 | Toshiba Corp | Solid-state image pick-up device |
US5019884A (en) * | 1989-04-07 | 1991-05-28 | Mitsubishi Denki Kabushiki Kaisha | Charge transfer device |
US5194751A (en) * | 1989-07-17 | 1993-03-16 | Sony Corporation | Structure of solid-state image sensing devices |
JPH0548069A (en) * | 1991-08-07 | 1993-02-26 | Nec Corp | Solid-state image sensing device |
Also Published As
Publication number | Publication date |
---|---|
JPH0130306B2 (en) | 1989-06-19 |
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