JPS5337392A - Driving pulse supplying method of charge coupled type semiconductor device - Google Patents

Driving pulse supplying method of charge coupled type semiconductor device

Info

Publication number
JPS5337392A
JPS5337392A JP11203876A JP11203876A JPS5337392A JP S5337392 A JPS5337392 A JP S5337392A JP 11203876 A JP11203876 A JP 11203876A JP 11203876 A JP11203876 A JP 11203876A JP S5337392 A JPS5337392 A JP S5337392A
Authority
JP
Japan
Prior art keywords
semiconductor device
charge coupled
type semiconductor
driving pulse
supplying method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11203876A
Other languages
Japanese (ja)
Other versions
JPS607390B2 (en
Inventor
Yasunori Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP51112038A priority Critical patent/JPS607390B2/en
Publication of JPS5337392A publication Critical patent/JPS5337392A/en
Publication of JPS607390B2 publication Critical patent/JPS607390B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Abstract

PURPOSE:To improve the transfer efficiency and improve resolution in a solid-state image sensing device by performing power supply of driving pulses also from the inside of a charge coupled semiconductor device.
JP51112038A 1976-09-17 1976-09-17 Drive pulse power supply method for charge-coupled semiconductor devices Expired JPS607390B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51112038A JPS607390B2 (en) 1976-09-17 1976-09-17 Drive pulse power supply method for charge-coupled semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51112038A JPS607390B2 (en) 1976-09-17 1976-09-17 Drive pulse power supply method for charge-coupled semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5337392A true JPS5337392A (en) 1978-04-06
JPS607390B2 JPS607390B2 (en) 1985-02-23

Family

ID=14576445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51112038A Expired JPS607390B2 (en) 1976-09-17 1976-09-17 Drive pulse power supply method for charge-coupled semiconductor devices

Country Status (1)

Country Link
JP (1) JPS607390B2 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619667A (en) * 1979-07-27 1981-02-24 Nec Corp Charge coupled device
JPS5687379A (en) * 1979-12-17 1981-07-15 Matsushita Electric Ind Co Ltd Solid image pickup device
JPS5861661A (en) * 1981-10-08 1983-04-12 Toshiba Corp Charge transfer device
JPS5877255A (en) * 1981-10-22 1983-05-10 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Image scanner
JPS5898961A (en) * 1981-12-09 1983-06-13 Toshiba Corp Charge transfer device
JPS6038869A (en) * 1983-08-11 1985-02-28 Nec Corp Two-dimensional charge coupled device image sensor
JPS6059543U (en) * 1983-09-29 1985-04-25 ソニー株式会社 solid-state image sensor
JPS6080272A (en) * 1983-10-07 1985-05-08 Canon Inc Charge transfer element
JPS60137064A (en) * 1983-12-26 1985-07-20 Toshiba Corp Charge transfer device
JPS6331551U (en) * 1986-08-14 1988-03-01
FR2616990A1 (en) * 1987-06-19 1988-12-23 Thomson Csf Charge-transfer matrix device tolerant to high vertical-transfer frequencies, and use of such a device in an image pick-up
JP2008103487A (en) * 2006-10-18 2008-05-01 Hamamatsu Photonics Kk Solid-state imaging device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194087A (en) * 1986-02-17 1987-08-26 株式会社タツノ・メカトロニクス Sealing device for rotary joint

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619667A (en) * 1979-07-27 1981-02-24 Nec Corp Charge coupled device
JPS5687379A (en) * 1979-12-17 1981-07-15 Matsushita Electric Ind Co Ltd Solid image pickup device
JPH0130306B2 (en) * 1979-12-17 1989-06-19 Matsushita Electric Ind Co Ltd
JPS5861661A (en) * 1981-10-08 1983-04-12 Toshiba Corp Charge transfer device
JPH039617B2 (en) * 1981-10-08 1991-02-08 Tokyo Shibaura Electric Co
JPS6226188B2 (en) * 1981-10-22 1987-06-08 Intaanashonaru Bijinesu Mashiinzu Corp
JPS5877255A (en) * 1981-10-22 1983-05-10 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Image scanner
JPS5898961A (en) * 1981-12-09 1983-06-13 Toshiba Corp Charge transfer device
JPH0245345B2 (en) * 1981-12-09 1990-10-09 Tokyo Shibaura Electric Co
JPS6038869A (en) * 1983-08-11 1985-02-28 Nec Corp Two-dimensional charge coupled device image sensor
JPS6059543U (en) * 1983-09-29 1985-04-25 ソニー株式会社 solid-state image sensor
JPS6080272A (en) * 1983-10-07 1985-05-08 Canon Inc Charge transfer element
US5073808A (en) * 1983-10-07 1991-12-17 Canon Kabushiki Kaisha Solid state semiconductor device
JPS60137064A (en) * 1983-12-26 1985-07-20 Toshiba Corp Charge transfer device
JPS6331551U (en) * 1986-08-14 1988-03-01
FR2616990A1 (en) * 1987-06-19 1988-12-23 Thomson Csf Charge-transfer matrix device tolerant to high vertical-transfer frequencies, and use of such a device in an image pick-up
JP2008103487A (en) * 2006-10-18 2008-05-01 Hamamatsu Photonics Kk Solid-state imaging device

Also Published As

Publication number Publication date
JPS607390B2 (en) 1985-02-23

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