JPS5861661A - Charge transfer device - Google Patents
Charge transfer deviceInfo
- Publication number
- JPS5861661A JPS5861661A JP56159490A JP15949081A JPS5861661A JP S5861661 A JPS5861661 A JP S5861661A JP 56159490 A JP56159490 A JP 56159490A JP 15949081 A JP15949081 A JP 15949081A JP S5861661 A JPS5861661 A JP S5861661A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- electrode
- wiring
- phase transfer
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 230000008878 coupling Effects 0.000 claims abstract description 7
- 238000010168 coupling process Methods 0.000 claims abstract description 7
- 238000005859 coupling reaction Methods 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 238000003491 array Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 238000009987 spinning Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 3
- 230000002950 deficient Effects 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001467 acupuncture Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
（１）発明の分野
本発明は電荷転送装置に係り、とくにその転送電極構造
に関する。DETAILED DESCRIPTION OF THE INVENTION (1) Field of the Invention The present invention relates to a charge transfer device, and more particularly to its transfer electrode structure.
（２）従来技術
第１図は従来の固体撮像装置に用いられる電荷転送素子
の部分平面図である。その構造を以下に説明する。半導
体基板１０上に光電変換素子１１ａ〜ｌｉｄが一列に並
んで形成されている。各素子は前記基板ｌＯと逆導電影
領域からなシ、光信号が入射すると電荷を蓄積する。こ
の素子列１１１〜ｌｉｄと平行にゲート電極１４が形成
されている。さらにこのゲート電極１４をはさんで前記
光電変換素子１１ａ〜ｌｉｄ Ｋ ｌ対１に対応して第
１相転送を極１２ａ〜１２ｄが形成されている。また第
１相転送′ｔｔ極１２１〜１２ｄの電極間の領域に第２
相転送電極１３ａ−１３ｄが第１相電極と少しオーバー
ラツプして形成てれている。(2) Prior Art FIG. 1 is a partial plan view of a charge transfer element used in a conventional solid-state imaging device. Its structure will be explained below. Photoelectric conversion elements 11a to lid are formed on a semiconductor substrate 10 in a line. Each element accumulates a charge when an optical signal is incident thereon due to the opposite conductive shadow region to the substrate IO. A gate electrode 14 is formed parallel to the element rows 111 to lid. Furthermore, first phase transfer poles 12a to 12d are formed across the gate electrode 14, corresponding to the photoelectric conversion elements 11a to lid Kl pair 1. In addition, there is a second phase transfer in the region between the electrodes of the first phase transfer
Phase transfer electrodes 13a-13d are formed with a slight overlap with the first phase electrode.
第２図は転送電極部分の拡大図である。各電極は２層の
ポリシリコン層より構成されている。第２相転送電極は
１層めのポリシリコン＃１２ａ −１〜１２ｃｍ１と絶
＃膜（図示せず）を介して積層された２層めのポリシリ
コン層１２ｍ−２〜１２ｃｍ２から構成されておシ、こ
れらは隣接する第２相転送電極の間の領域で共通のアル
ミ配線１５Ｖこコンタク） １７ａ〜１７ｃによって接
続されている。第２相転送電極も同様ｖｃ１１＊メｃ’
）ホ９ シリ＊ ン％１３ａ −４〜１３ｃｍ１と絶縁
膜を介して積層された２ｊ−めのポリ７リコン１３！ｌ
−２〜１３ｃ −２から構成されており、コンタク）
１８ａ −１８Ｃにより共通のアルミ配線１６に接続
されている。転送ｉｔ極を２層構造にするのは、第１層
めの電極を形成した後これにセルファラインに基板ｌＯ
と同−導電形不純物領域を形成することによプ第２層め
の電極下のポテンシャルを第１層めＯ電極下のポテンシ
ャルに比べて浅くシ、電荷が逆方向に転送されないよう
にするためである。FIG. 2 is an enlarged view of the transfer electrode portion. Each electrode is composed of two polysilicon layers. The second phase transfer electrode is composed of a first layer of polysilicon #12a-1 to 12cm1 and a second polysilicon layer of 12m-2 to 12cm2 laminated via an insulation film (not shown). These are connected by common aluminum wiring 15V contacts 17a to 17c in the region between adjacent second phase transfer electrodes. Similarly, the second phase transfer electrode is vc11*mec'
) 2j-th poly 7 silicone 13 laminated with silicon % 13a -4~13cm1 via an insulating film! l
Consists of -2 to 13c -2, contact)
It is connected to the common aluminum wiring 16 by 18a to 18C. The reason why the transfer IT electrode has a two-layer structure is to form the first layer electrode and then attach the substrate lO to the self-alignment line.
By forming an impurity region of the same conductivity type, the potential under the second layer electrode is made shallower than the potential under the first layer O electrode, so that charges are not transferred in the opposite direction. It is.
次にこの電荷転送素子の動作を説明する。Next, the operation of this charge transfer element will be explained.
光電変換素子１１ａ〜−１ｉｄに光信号が入射すると電
荷が発生しそのＰＮ接合に蓄積される。ゲート電極１４
に一定のタイミングでパルス信号φＳＨを与えるとこれ
らの光電に換系子１１ａ −ｌｉｄに蓄積された電荷が
それぞれ対応する第１相転送電極１２ａ〜１２ｄに転送
される。第１相転送電極１２ａ −１２ｄと、第２相転
送電極１３ａ ’＝ ｉ３ｄにはそれぞれ配線１５．１
６から位相が牛周期ずれ九パルス信号φ８．φ２が与え
られておシ、ガえは光電変換索子ｌｉｄよシ第１相転送
電極１２ｄに転送されてきた電荷は、パルス信号φｉ、
φ１によりこの電極から、隣接する第２相転送電極１３
ｄに再び転送される。さらに次のタイミングでこの電荷
は第１相転送電極１２ｃに送られる。When an optical signal is incident on the photoelectric conversion elements 11a to -1id, charges are generated and accumulated in their PN junctions. Gate electrode 14
When a pulse signal φSH is applied at a constant timing to these photoelectric charges, the charges accumulated in the converters 11a-lid are transferred to the corresponding first phase transfer electrodes 12a to 12d, respectively. The first phase transfer electrodes 12a-12d and the second phase transfer electrode 13a'=i3d each have wiring 15.1.
6, the phase is shifted from the cow cycle by 9 pulse signals φ8. When φ2 is applied, the charge transferred from the photoelectric conversion element lid to the first phase transfer electrode 12d is generated by the pulse signal φi,
φ1 from this electrode to the adjacent second phase transfer electrode 13
d again. Further, at the next timing, this charge is sent to the first phase transfer electrode 12c.
このようにして、第１相、＠２相相転型極列１２ａ〜Ｉ
２ｄ、１３ａ〜１３ｄによって電荷が一定方向に順次送
られていく。In this way, the first phase, @2 phase phase inversion type pole array 12a to I
2d, 13a to 13d, charges are sequentially sent in a certain direction.
（３）従来技術の閲遍点
従来の電荷転送素子の転送電極構造では、第１相転送電
極１２ａ〜１２ｄがおのおの独立にコンタクト１７ａ
−１７ｄによりて配線１５に接ｄされている、。(3) Browsing point of conventional technology In the transfer electrode structure of the conventional charge transfer element, the first phase transfer electrodes 12a to 12d each independently contact the contact 17a.
It is connected to the wiring 15 by -17d.
従ってそのうちの１つでも接続不良を起こせば正常な電
荷転送は不可能になってしまうという欠点があった。Therefore, there is a drawback that if a connection failure occurs in even one of them, normal charge transfer becomes impossible.
また第１相転送電極１２ａ〜１２ｄのコンタクト１７ａ
〜１７ｄは、第２相転送電極１２１−１２ｄの間の鍼域
に形成しなければならない。ところが第２図を多照すれ
ばわかるとおシ微細化が進むにつれて電極間がますます
侠〈なっており、とくに第１相の電極に対して確実なコ
ンタクトが形成できなくなる傾向かあシネ車重が高くな
って１４１となっている１゜（４）発明の目的
本発明は従来装置の欠点を改善し、接続不良が起こりに
＜＜、微細化に適した転送電極構造を有する電荷転送装
置を提供することを目的とする。Also, the contacts 17a of the first phase transfer electrodes 12a to 12d
~17d must be formed in the acupuncture area between the second phase transfer electrodes 121-12d. However, if we look closely at Figure 2, we can see that as film miniaturization progresses, the distance between the electrodes becomes increasingly tight, and there is a tendency for it to become impossible to form reliable contact with the first phase electrode in particular. 1° (4) Purpose of the Invention The present invention improves the drawbacks of conventional devices and provides a charge transfer device having a transfer electrode structure suitable for miniaturization, which prevents connection failure from occurring. The purpose is to provide.
（５）発明の要点
本発明は半導体基体と、この基体上に形成され九絶縁膜
と、この結縁膜上に形成されほぼ平行に並んで配置され
九転送電極列のうち同時に等しい電圧が付加される転送
電極と、これらの電極の複数−をほぼその一端部で結合
して電極群を構成する結合手段と、この電極群に与える
信号を伝達する配線と、前記電極群の前記結合手段が形
成された一端部と逆端部においてこの電極群と前記配線
との接続を行なう少なくとも１′）の接続部を有するこ
とを％黴とする電荷転送装置である。(5) Main Points of the Invention The present invention comprises a semiconductor substrate, nine insulating films formed on the substrate, nine transfer electrode arrays formed on the connecting film and arranged approximately in parallel, and to which equal voltages are simultaneously applied. a transfer electrode, a coupling means for coupling a plurality of these electrodes substantially at one end to form an electrode group, a wiring for transmitting a signal to be applied to the electrode group, and a coupling means for the electrode group. The charge transfer device is characterized in that it has at least 1' connecting portions for connecting the electrode group and the wiring at one end and the opposite end.
（６）発明の実施例
第３図は本発明の一実施例の電荷転送素子を示す部分平
面図である。光電変換素子３１ａ〜３１ｄが半導体基板
父上に一列に形成されでいる。これらの素子は基板園と
反対導電影領域により形成されてｉる。この素子列に平
行に基板父上に絶縁膜を介してゲート電極具が形成され
ている。このゲート電極Ｕをはさんだ基板３０上に絶縁
膜を介して前記素子３１ｊ〜３１ｄに１対１に対応して
第１相転送電極３２−〜３２ｄが形成されている。これ
らの第１相転送電極３２ａ 〜３２ｄは、ゲート電極３
４（ｉｉｌｌの一端部で互いに連結されている。また他
端部は一本おきにＡ）−配線３５にコンタクト３７Ｍ
、 ３７ｂで接続されている。第１相転送電極の間には
これらに少レオーバーンツブして第２相転送電極３３ａ
〜３３ｄが形成されている。第２相転送電極は２本１組
で連結してＡＪ−配線謁にコンタクト３８ａ 、 ３８
ｂで接続されている。この人１配線３６と第２相転送電
極との接続部は１本おきに形成された前記第１相転送電
極のコンタク） ３７ａ 、 ３７ｂ間の領域に形成さ
れる。(6) Embodiment of the Invention FIG. 3 is a partial plan view showing a charge transfer device according to an embodiment of the invention. Photoelectric conversion elements 31a to 31d are formed in a row on the semiconductor substrate. These elements are formed by a substrate field and an oppositely conductive shadow region. A gate electrode member is formed parallel to this element array on the upper surface of the substrate with an insulating film interposed therebetween. On the substrate 30 sandwiching the gate electrode U, first phase transfer electrodes 32- to 32d are formed in one-to-one correspondence to the elements 31j to 31d via an insulating film. These first phase transfer electrodes 32a to 32d are connected to the gate electrode 3.
4 (iill) are connected to each other at one end.Alternatively, every other end is A) - contact 37M is connected to wiring 35.
, 37b. Between the first phase transfer electrodes, there is a small rheobron protrusion between the second phase transfer electrodes 33a.
~33d are formed. The second phase transfer electrodes are connected in pairs and are connected to the AJ-wiring audience contacts 38a, 38.
Connected by b. The connection portion between the person 1 wiring 36 and the second phase transfer electrode is formed in a region between the contacts 37a and 37b of the first phase transfer electrode formed every other line.
第４図は第１相と第２相の転送電極の詳細図である。第
１相転送電極は１層めのポリシリコン層３２ａ−１〜３
２ｄ−１と絶縁膜（図示せず）を介して積層された３層
めのポリシリコン層３２ａ−２〜３２ｄ −２によって
形成されている。同様に第２相転送電極Ｉ’ｌ１層めの
ポリシリコン層３３ｍ−１〜３３ｄ−１とこれに絶縁膜
を介して積層された２層めのポリシリコンｌｍ３３ｍ−
２〜３３ｄ−２によって形成されている。このように電
極が３層のポリシリコン層で構成されているのは、まず
第１層めを形成した後これにセル７アラインに基板と同
−導電形の領域を形成することによシ第２，３層めの電
極下のボテンシャルを第１層めの電極下のものより浅く
して電荷の流水が逆流しないような構造にすることと、
電極間が接近しているので短絡しないように絶縁膜を介
した構造にすることが目的である。FIG. 4 is a detailed diagram of the first and second phase transfer electrodes. The first phase transfer electrode is the first polysilicon layer 32a-1 to 32a-3.
2d-1 and third polysilicon layers 32a-2 to 32d-2 stacked with an insulating film (not shown) interposed therebetween. Similarly, the second phase transfer electrode I'l1 layer of polysilicon layers 33m-1 to 33d-1 and the second layer of polysilicon lm33m-1 laminated thereon with an insulating film interposed therebetween.
2 to 33d-2. The reason why the electrode is composed of three polysilicon layers is that after first forming the first layer, a region of the same conductivity type as the substrate is formed in the cell 7 alignment. The potentials under the second and third layer electrodes are made shallower than those under the first layer electrode to create a structure that prevents the flow of charge from flowing backwards.
Since the electrodes are close to each other, the purpose is to create a structure with an insulating film in between to prevent short circuits.
以下に本実施例の動作を説明する。光電変換素子３１ａ
〜３１ｄに光信号が入射すると、基体刃内部で電荷が発
生する。この電荷はこの素子のＰＮ接合部に蓄積される
。その後ゲート電極Ｕに印加されるパルスφＳＨによっ
て、この電荷は第１相伝送電極３２１１〜３２（ｉに転
送される。第１相転送電極３２ａ〜３２ｄと、第２相転
送電極３３ａ〜３３ｄにはＡＪ配線３５．３６によって
それぞれ共通のコンタクト３７ａ、 ３７ｂ。The operation of this embodiment will be explained below. Photoelectric conversion element 31a
When an optical signal is incident on ~31d, an electric charge is generated inside the base blade. This charge is stored in the PN junction of the device. Thereafter, by the pulse φSH applied to the gate electrode U, this charge is transferred to the first phase transfer electrodes 3211 to 32 (i). Common contacts 37a and 37b by AJ wiring 35 and 36, respectively.
３８ｍ、 ３８ｋｓカらパルスφ、とφ、がそれぞれ印
加される。Pulses φ and φ are applied from 38 m and 38 ks, respectively.
コンタクトは電極２本に対し１つの割合であるので十分
遍く信号が伝達する。パルスφ重と４文は半周期ずれて
いる。この結果第１相転送電極３２ｄ下の電荷は第２相
転送電極３３ｄ下に転送され、第２相転送電極３３ｄ下
の電荷は第１相転送電極３２ｃ下に荷が一定方向に順次
送られる。Since the number of contacts is one for every two electrodes, signals are transmitted sufficiently evenly. The pulse φ weight and the 4th sentence are shifted by half a cycle. As a result, the electric charges under the first phase transfer electrode 32d are transferred under the second phase transfer electrode 33d, and the electric charges under the second phase transfer electrode 33d are sequentially sent under the first phase transfer electrode 32c in a fixed direction.
第５図は本発明の別の実施例に用いられる転送電極部分
の平面図である。第１相転送！極が一体化され４電極ご
とに一つの共通のコンタクト５７で配線５５に接続され
てｈる。第２相転込電極５３ａ〜５３ｈは４本に対して
ｌりのコンタク）５８ａ、５８ｂを設けて配線５６に接
続されている。このように電極とコンタクトの数の割合
は、信号の伝達が悪くならない程度に適当に選べばよい
。FIG. 5 is a plan view of a transfer electrode portion used in another embodiment of the present invention. First phase transfer! The poles are integrated and connected to the wiring 55 through one common contact 57 for every four electrodes. The second phase transfer electrodes 53a to 53h are connected to the wiring 56 by providing contactors 58a and 58b (for each of the four electrodes). In this way, the ratio between the number of electrodes and the number of contacts may be appropriately selected to the extent that signal transmission is not impaired.
（７）発明の効果
本発明によれば第１相転送電極が互いに連結されている
ため、おのおのの電極すべてに配線用のコンタクトを設
ける必要はなく、コンタクトの数を間引くことができる
。この結果第２相伝送電極もまとめてコンタクト部ｆｔ
設けることができる。(7) Effects of the Invention According to the present invention, since the first phase transfer electrodes are connected to each other, it is not necessary to provide wiring contacts for all of the electrodes, and the number of contacts can be reduced. As a result, the second phase transmission electrodes are also integrated into the contact section ft.
can be provided.
こうして第１相、第２相電極の数に対して、それぞれコ
ンタクトの数を減らすことができる。こうしてコンタク
トをとる面積的余裕が大きくなり、接続し易くなる。と
くに近年は電極間間隔が数μｍ程度である上、多数のポ
リシリコン層を積層して電極を形成するとき２μｍ程度
のオーバーシップが必要となるため、第２図のような従
来の構造では、事実上充分なコンタクトを形成すること
は不可能である。本発明では第４図を参照すればわかる
ように電極間間隔が数μｍであってもコンタクトの形成
に十分な余裕を持つことができる。また電極が互いに連
結され一本化されているため、一つのコンタクトで接続
不良が起きても正常な転送電圧が全電極に印加され、不
良率を激減させることができる。In this way, the number of contacts can be reduced relative to the number of first and second phase electrodes. In this way, there is a large area margin for making contact, making it easier to connect. In particular, in recent years, the spacing between electrodes is on the order of several micrometers, and when forming electrodes by laminating a large number of polysilicon layers, an overship of about 2 micrometers is required. It is virtually impossible to form sufficient contact. In the present invention, as can be seen from FIG. 4, even if the distance between the electrodes is several μm, there is sufficient margin for contact formation. In addition, since the electrodes are connected to each other and integrated into one, even if a connection failure occurs in one contact, a normal transfer voltage is applied to all electrodes, making it possible to drastically reduce the defective rate.
また第２の実施例で示した通り、本発明は装置の微細化
にともない電極間隔の集約化が進めば進む程、その効果
を発揮するものであシ、電荷転送素子の構造として最適
のものである。Furthermore, as shown in the second embodiment, the present invention becomes more effective as the electrode spacing becomes more compact as the device becomes finer. It is.
第１図は従来の電荷転送素子の部分平面図、第２図はそ
の転送電極部分の拡大図、第３図は本発明の第１の実施
例の電荷転送素子の部分平面図、第４図はその転送電極
部分の拡大図、第５図は本発明の第２の実施例の電荷転
送菓子の電極部分の平面図である。図において
３０・・・・・・・・・・・・・半導体基体、３２ａ〜
３２ｄ・・・第１相伝送電極、３５・・・・・・・・・
・・・・配 線、３７ａ 、 ３７ｂ・・・接 続 部
。
（７３１７）代理人 弁理士 則 近 憲 佑（ほか
１名）
第 １図
、、ｔ。
第２図
１２５１１ １８６
＃Ｃ第３図 ７４
￥４図FIG. 1 is a partial plan view of a conventional charge transfer device, FIG. 2 is an enlarged view of its transfer electrode portion, FIG. 3 is a partial plan view of a charge transfer device according to the first embodiment of the present invention, and FIG. 5 is an enlarged view of the transfer electrode portion, and FIG. 5 is a plan view of the electrode portion of the charge transfer confectionery according to the second embodiment of the present invention. In the figure, 30...... Semiconductor substrate, 32a~
32d...first phase transmission electrode, 35......
...Wiring, 37a, 37b...Connection part. (7317) Agent: Patent Attorney Noriyuki Chika (and 1 other person) Figure 1, t. Figure 2 12511 186
#C Figure 3 74 ￥4 Figure
Claims (4)
、この絶＠膜上に形成場れほぼ平行に並んで配置された
転送電極列のうち同時に等しい電圧が付加される転送電
極と、これらの電極の複数個をほぼその一端部で結合し
て電極群を構成する結合手段と、この電極群に与える信
号を伝達する配線と、前記電ｌ極群の紡記結合手段が形
成された一端部と逆端部においてこの電極群と帥記配線
との接続を行なう少なくとも１つの接続部を有すること
を特徴とする電荷転送装置。(1) A semiconductor substrate, an insulating film formed on this substrate, and transfer electrodes to which equal voltages are simultaneously applied among the transfer electrode arrays formed on the insulating film and arranged almost parallel to each other. , a coupling means for coupling a plurality of these electrodes at substantially one end thereof to form an electrode group, a wiring for transmitting a signal to be applied to the electrode group, and a spinning coupling means for the electrode group are formed. A charge transfer device comprising at least one connection portion for connecting the electrode group to the main wiring at one end and the opposite end.
配列して形成され、この光電変換素子列に対応して転送
電極列が設けられており、この転送電極への配線と接続
部はこの転送°電極列をはさんで前記光電変換素子列と
反対側に設けられていることを特徴とする特許請求の範
囲第１項記載の電荷転送装置。(2) One photoelectric conversion element on the semiconductor substrate! ! Number + I! !
A transfer electrode row is provided corresponding to this photoelectric conversion element row, and the wiring and connection portion to this transfer electrode is opposite to the photoelectric conversion element row with this transfer electrode row in between. 2. The charge transfer device according to claim 1, wherein the charge transfer device is provided on the side.
倍であることを特徴とする特許請求の範囲第１項記載の
電荷転送装置。(3) The number of transfer electrodes that make up the electrode group is equal to the number of connection parts.
2. The charge transfer device according to claim 1, wherein the charge transfer device is twice as large.
シリコンで形成されていることを特徴とする特許請求の
範囲第１項記載の電荷転送装置。(4) The charge transfer device according to claim 1, wherein the transfer electrode is formed of polycrystalline silicon containing impurity and has a multilayer structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56159490A JPS5861661A (en) | 1981-10-08 | 1981-10-08 | Charge transfer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56159490A JPS5861661A (en) | 1981-10-08 | 1981-10-08 | Charge transfer device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5861661A true JPS5861661A (en) | 1983-04-12 |
| JPH039617B2 JPH039617B2 (en) | 1991-02-08 |
Family
ID=15694900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56159490A Granted JPS5861661A (en) | 1981-10-08 | 1981-10-08 | Charge transfer device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5861661A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5898961A (en) * | 1981-12-09 | 1983-06-13 | Toshiba Corp | Charge transfer device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50123285A (en) * | 1974-03-16 | 1975-09-27 | ||
| JPS5337392A (en) * | 1976-09-17 | 1978-04-06 | Sanyo Electric Co Ltd | Driving pulse supplying method of charge coupled type semiconductor device |
| JPS53111284A (en) * | 1971-10-27 | 1978-09-28 | Philips Nv | Charge coupled semiconductor |
| JPS5591869A (en) * | 1978-12-29 | 1980-07-11 | Ibm | Charge coupled device |
| JPS55179074U (en) * | 1979-06-08 | 1980-12-23 |
-
1981
- 1981-10-08 JP JP56159490A patent/JPS5861661A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53111284A (en) * | 1971-10-27 | 1978-09-28 | Philips Nv | Charge coupled semiconductor |
| JPS50123285A (en) * | 1974-03-16 | 1975-09-27 | ||
| JPS5337392A (en) * | 1976-09-17 | 1978-04-06 | Sanyo Electric Co Ltd | Driving pulse supplying method of charge coupled type semiconductor device |
| JPS5591869A (en) * | 1978-12-29 | 1980-07-11 | Ibm | Charge coupled device |
| JPS55179074U (en) * | 1979-06-08 | 1980-12-23 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5898961A (en) * | 1981-12-09 | 1983-06-13 | Toshiba Corp | Charge transfer device |
| JPH0245345B2 (en) * | 1981-12-09 | 1990-10-09 | Tokyo Shibaura Electric Co |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH039617B2 (en) | 1991-02-08 |
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