JPS5898961A - Charge transfer device - Google Patents
Charge transfer deviceInfo
- Publication number
- JPS5898961A JPS5898961A JP56198191A JP19819181A JPS5898961A JP S5898961 A JPS5898961 A JP S5898961A JP 56198191 A JP56198191 A JP 56198191A JP 19819181 A JP19819181 A JP 19819181A JP S5898961 A JPS5898961 A JP S5898961A
- Authority
- JP
- Japan
- Prior art keywords
- transfer
- phase
- electrodes
- electrode
- charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は固体撮像装置等に適用される信号電荷転送のた
めの電荷転送装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a charge transfer device for signal charge transfer applied to solid-state imaging devices and the like.
電荷転送装置は、半導体基板上に絶縁膜を介して複数個
の導電性電極を所定間隔で配設し、該導電性電極に所定
のパルス電圧あるいは直流電圧を印加することにエリ、
半導体中で電荷の転送を行うものである。この↓うな電
荷転送装置は一般に固体撮像装置にＬ〈用いられている
。A charge transfer device consists of disposing a plurality of conductive electrodes at predetermined intervals on a semiconductor substrate via an insulating film, and applying a predetermined pulse voltage or DC voltage to the conductive electrodes.
It transfers charge within a semiconductor. Charge transfer devices like this are generally used in solid-state imaging devices.
ところで、−次元固体撮像装置等においては近年増々多
画素化並びに微細化−＼の要請が高まっている。従って
、これら装置の信号電荷の搬送手段として用いられる電
荷転送装置の転送手段は増々多段化し、しかもその転送
電極とアルミニウム（Ａｔ ） 等の金属配線との接
続孔（コンタクトホール）は微小化を余儀なくされてい
る。By the way, in recent years, there has been an increasing demand for increasing the number of pixels and miniaturization in -dimensional solid-state imaging devices and the like. Therefore, the transfer means of charge transfer devices used as signal charge transfer means in these devices has become increasingly multistage, and the contact holes between the transfer electrodes and metal wiring such as aluminum (At) have been forced to become smaller. has been done.
第１図は従来の一次元固体イメージセンサに適用した２
相駆動の電荷転送装置を示している０こｑ）装置におい
て、１＆〜１ｄはｐ−ｎ フォトオード等の光電変換
素子、２ａ〜２ｄは第１相の転送りロックパルスφ１が
印加される第１相転送電極、３ａ〜３ｄは第２相の転送
りロックパルスφ２が印加される第２相転送電極、４は
第１相転送りコックパルスφ１を供給する金属配線、５
は第２相転送りロックパルスφ、を供給する金属配線、
６は光電変換素子１１〜１ｄで得らハた信号電荷を電荷
転送装置′・・シフトクロックφ３０に二り移送制御す
る迄めの移送制御電極、７ａ〜４ｄは上記第１相転送電
極２１〜２ｄと第１相金属配線４とを電気的に接続する
コンタクトホールとしての接続部分、８ａ〜８ｄは上記
第２相転送電極３ａ〜３ｄと第２相金属配ｔ５とを電気
的に接続するコンタクトホールとしての接続部分、９は
破線で示す転送するチャネル領域である。Figure 1 shows the two-dimensional image sensor applied to a conventional one-dimensional solid-state image sensor.
In the phase drive charge transfer device shown in FIG. 1-phase transfer electrodes, 3a to 3d are second-phase transfer electrodes to which the second-phase transfer lock pulse φ2 is applied, 4 is a metal wiring that supplies the first-phase transfer cock pulse φ1, 5
is the metal wiring that supplies the second phase transfer lock pulse φ,
Reference numeral 6 denotes a transfer control electrode for controlling the transfer of signal charges obtained by the photoelectric conversion elements 11 to 1d to a charge transfer device' according to the shift clock φ30, and 7a to 4d refer to the first phase transfer electrodes 21 to 4d. Connection portions 8a to 8d serve as contact holes for electrically connecting the second phase transfer electrodes 3a to 3d and the second phase metal interconnection t5, and contacts 8a to 8d electrically connect the second phase transfer electrodes 3a to 3d to the second phase metal interconnection t5. The connection portion 9 as a hole is a transfer channel region shown by a broken line.
上記装置において、光電変換素子１ａ〜１ｄで得られた
信号電荷束を、移送制御電極６に所定電圧のシフトクロ
ックツぐルスφｍＷを印加することに↓り絽１相転送電
極２１〜２ｄ下へ並列に移送し、館１相転送りロツクノ
（ルスφ、を第１相転送電極２１〜２ｄに、第２相転送
りロックパルスφ、を第２相転送電極３＆〜３ｄにそれ
ぞれ印加することによって、矢印で示す工うに右側から
左側に向って信号電荷を順次転送する。In the above device, the signal charge flux obtained by the photoelectric conversion elements 1a to 1d is applied to the transfer control electrode 6 by applying a shift clock pulse φmW of a predetermined voltage to the one-phase transfer electrodes 21 to 2d. By transferring in parallel and applying the first phase transfer lock pulse φ to the first phase transfer electrodes 21 to 2d and the second phase transfer lock pulse φ to the second phase transfer electrodes 3 and 3d, respectively. , signal charges are sequentially transferred from the right side to the left side as indicated by the arrows.
し背景技術ｑ；問題点〕
上述した［衝１．送装置においては、第２相転送電極３
ａ〜３ｄは転送チャネル領域に対して丸亀変換素子１８
〜ｌｄ列が配置された側と反対側において一体に形成さ
れているのに対し、ｗＪｌ相転相転極電極２１〜２ｄ々
独立に存在し、金属配線４及び各接続部分７１〜７ｄを
通じてのみ転送パルスφ、が供給される。これは、一般
に接ｔｊ部分１ａ〜７ｄが光電変換素子ｉ、〜１ｄから
信号電荷を受入れる側に存在した場合には、円滑なある
いは効率的な移送が行ない難いという事実にぶり鮎釣さ
れた構造となっている。−まり、第１相転送電極２ａ〜
２ｄと金属配線４との！＆続部分１１〜７ｄのうち０１
つが不完全であっても、正常な転送パルスが対応する転
送電極Ｚａ〜２ｄへ供給されなくなり、正児な信号電荷
の転送はできなくなる０つまり、このような電荷転送装
置では、動作原理からも明らかな工うに一電極のコンタ
クトが不十分であっても正常な動作が不可能であるとい
つ六欠点を毛していた０
〔発明の目的〕
本発明は上記の問題点に１１みてなされたもので、転送
電極と配線との何個所かのコンタクトが不十分であって
も正常な転送動作が可能であり、しかも構造的に光電変
換素子からの信号の受は入れを何らの支障もき九さない
工うにし得る電荷転送装置を提供することを目的とする
。Background technology q; Problems] The above-mentioned [opposition 1. In the transfer device, the second phase transfer electrode 3
a to 3d are Marugame transformation elements 18 for the transfer channel region.
While the ~ld columns are formed integrally on the side opposite to the arranged side, the wJl phase change phase change polarity electrodes 21~2d exist independently, and only through the metal wiring 4 and each connection part 71~7d. A transfer pulse φ is supplied. This structure is based on the fact that if the contact portions 1a to 7d are located on the side that receives signal charges from the photoelectric conversion elements i and 1d, it is difficult to transfer them smoothly or efficiently. It becomes. -Mari, first phase transfer electrode 2a~
2d and metal wiring 4! & 01 of continuation parts 11-7d
Even if the charge transfer device is incomplete, normal transfer pulses will not be supplied to the corresponding transfer electrodes Za to 2d, and normal signal charge transfer will not be possible.In other words, in such a charge transfer device, it is clear from the operating principle that However, even if the contact between one electrode is insufficient, normal operation is impossible.[Object of the Invention] The present invention has been made in view of the above problems. Therefore, normal transfer operation is possible even if the contact between the transfer electrode and the wiring is insufficient in some places, and the structure does not pose any hindrance to receiving signals from the photoelectric conversion element. An object of the present invention is to provide a charge transfer device that can be operated without any problems.
本発明にあっては、同相パルスあるいは直流電圧が印加
される電極群を一端において全て一体化形成すると共に
、この一体化構造が上記各電極群とこれら電極群へ所定
電圧を供給するための金属配線との接続の九めＯコンタ
クトホールに１つて光電変換素子力・らの信号電荷の受
は入れに何らの支障もき九さないように、その存在領域
を電荷転送チャンネルに対して並行した領域の一方ＩＩ
Ｉ（チャネルに沿った片側の領域）に限定して形成した
ものである。In the present invention, all of the electrode groups to which in-phase pulses or DC voltages are applied are integrally formed at one end, and this integrated structure includes the above-mentioned electrode groups and a metal for supplying a predetermined voltage to these electrode groups. One contact hole in the ninth corner of the connection with the wiring is placed so that the area where it exists is parallel to the charge transfer channel so as not to cause any hindrance to receiving the signal charge of the photoelectric conversion element. One side of the area II
It is formed only in I (region on one side along the channel).
〔発明の実施例〕
第２図は本発明の一実施例に係る電荷転送装置を示して
いる０図において、１０ａ〜１０（１は第１相転送りロ
ックパルスφ１が印加される第１相転送電極であり、１
１ａ〜Ｉｌｄは第２相転送りロックパルスφ！が印加さ
れる第２相転送電極である。その他は前述し次実施例と
同様であるのでその説明は省略する。上記第２相転送電
極１１１〜Ｉｌｄは、転送チャンネル領域９に沿つ九一
方側の領域において一体化形成されている。また、第１
相転送電極１０ｈ〜１０６は、転送チャンネル９に沿っ
た他方側、すなわち光電変換素子１ａ〜１ｄが配設され
る側において一体に形成されている。上記第１゜ｊｌＥ
２相転送電極１ ’０ ＊〜１０ ｄ 、 １１ ｈ〜
１１ｄとこれら電極へ所定電圧のクロックパルスφ、。[Embodiment of the Invention] FIG. 2 shows a charge transfer device according to an embodiment of the present invention. In FIG. It is a transfer electrode, and 1
1a to Ild are second phase transfer lock pulses φ! is the second phase transfer electrode to which is applied. The rest is the same as that described in the following embodiment, so the explanation thereof will be omitted. The second phase transfer electrodes 111 to Ild are integrally formed in a region on one side along the transfer channel region 9. Also, the first
The phase transfer electrodes 10h to 106 are integrally formed on the other side along the transfer channel 9, that is, on the side where the photoelectric conversion elements 1a to 1d are disposed. The above 1st °jlE
Two-phase transfer electrode 1'0*~10d, 11h~
11d and a clock pulse φ of a predetermined voltage to these electrodes.
φ、ｔ−供給する金属配線４，５との接続部分１８〜Ｉ
ｄ、８＠〜８ｄは、前述同様に転送チャンネル９に沿っ
た片側であって、上記転送チャンネル９を挾んで上記光
電変換素子１＆〜１ｄとは反対側に配設されている。な
お、前記電極１０ｑ〜１０ｄ 、 １１ｈ〜１１ ｄは
、電極部材として一般的に用いられる不純物をドープし
＾多結晶シリコンを利用して形成している。φ, t- Connection portions 18 to I with metal wirings 4 and 5 to supply
d, 8@~8d are arranged on one side along the transfer channel 9 as described above, and on the opposite side from the photoelectric conversion elements 1&~1d with the transfer channel 9 in between. The electrodes 10q to 10d and 11h to 11d are formed using polycrystalline silicon doped with impurities commonly used as electrode members.
この↓うな構造を壱する電荷転送装置においては、上記
接続部７１〜Ｉｄ、８＆〜８ｄのうちいくつかの第１．
第２相転送電極１０ａ〜１０ｄ、１１ｈ〜ｌｉｄとの接
続部が不完全であっても、一体に形成された電極部材そ
のものを通じて転送りロックパルスφ７．−言が正ｆｇ
に供給されるので、何らの支障もき九さず、正常に信号
電荷の転送を実施できる。しかも、これらの一体化形成
された電極部が、光電変換素子１１〜１ｄからの信号電
荷の受は入れた何らの支障もき九さない工うに上記コン
タクトホールとしての接続部の存在領域を限定し九構造
としているので、スムースな電荷転送動作が実施できる
。In the charge transfer device having the above structure, some of the connection parts 71 to Id, 8 & to 8d are connected to the 1st.
Even if the connections with the second phase transfer electrodes 10a to 10d and 11h to lid are incomplete, the lock pulse φ7. -Words are correctfg
Therefore, signal charges can be transferred normally without any hindrance. Moreover, these integrally formed electrode portions limit the area where the connection portions as the contact holes exist so as to receive signal charges from the photoelectric conversion elements 11 to 1d without causing any hindrance. Since it has a double structure, smooth charge transfer operation can be performed.
Ｉｌｂ３図は本発明の他の実施例である電荷転送装置を
示している。本実施例では、充電変換素子列で得られた
信号を２つの電荷転送装置に振り分けて搬送する一次元
固体イメージ七ンサに適用している。図において、１２
ｂ〜Ｊ２には充電変換素子、１３は移送飼鳥電極、１４
ａは後述する第１転送チヤネルの第１相転送りロックパ
ルスφ、が印加される第１相転送電極の第１層部分、１
４ｂは第２転送チヤネルの第１相転送りロックパルスφ
、が印加される第１相転込電極の第１層部分、１５ａは
第１転送チヤネルのＪ１１相転送りロックパルスφ、が
印加されるＪｇｌ相転相転極電極２層部分、１ｔｉｂは
第２転送チヤネルの１！ｃ１相転送りロックパルスφ。Figure Ilb3 shows a charge transfer device which is another embodiment of the present invention. In this embodiment, the present invention is applied to a one-dimensional solid-state image sensor that distributes and conveys signals obtained by a charge conversion element array to two charge transfer devices. In the figure, 12
b to J2 are charging conversion elements, 13 is a transfer feed electrode, 14
a is the first layer portion of the first phase transfer electrode to which the first phase transfer lock pulse φ of the first transfer channel, which will be described later, is applied, 1
4b is the first phase transfer lock pulse φ of the second transfer channel
, 15a is the first layer portion of the first phase transfer electrode to which the J11 phase transfer lock pulse φ of the first transfer channel is applied, 1tib is the second layer portion of the Jgl phase transfer electrode to which the J11 phase transfer lock pulse φ of the first transfer channel is applied, and 1tib is the second layer portion of the first phase transfer electrode. 1 of 2 transfer channels! c1 phase transfer lock pulse φ.
が印加される第１相転送電極の第２層部分、１６ｇは第
１転送チヤネルのＪＩ２相転送りロックパルスφ２が印
加される第２相転送電極の第１層部分、Ｊｉｂは第２転
送チヤネルの第２相転送りロックパルスφ、が印加され
る＄２相転送電極の第１層部分、１７ａは第１転送チヤ
ネルの第２相転送りロックパルス−２が印加されるｌｋ
２相転相転極電極２層部分、１１ｂは第２転送チヤネル
の第２相転送りロックパルスφ２が印加される第２相転
送電極の第２層部分、１８＆は第１相転送パルスφ１を
第１転送チヤネルの第１相電極１１１４ｈ、ｓｓ＠に供
給するための金属配線、１８ｂは第１相転送パルスφ。16g is the first layer portion of the second phase transfer electrode to which the JI2 phase transfer lock pulse φ2 of the first transfer channel is applied, and Jib is the second layer portion of the second transfer electrode. 17a is the first layer portion of the $2 phase transfer electrode to which the second phase transfer lock pulse φ, is applied, lk to which the second phase transfer lock pulse -2 of the first transfer channel is applied.
11b is the second layer portion of the second phase transfer electrode to which the second phase transfer lock pulse φ2 of the second transfer channel is applied, and 18& is the second layer portion of the two phase transfer polarization electrode. First phase electrode 1114h of the first transfer channel, metal wiring for supplying ss@, 18b is first phase transfer pulse φ.
を第２転送チヤネルの第１相電極群１４ｂ。the first phase electrode group 14b of the second transfer channel.
１５ｂに供給するための金属配線、１９ａは第２相転送
パルスφ、を第１転送チヤネルの第２相電極群１１；＠
、１１＠に供給するための金属配線、１９ｂは第２相転
送パルスφ２を第２転送チヤネルのＪＩ２相電極群１６
ｂ、Ｉｌｂに供給するための金属配線、２０ ａ 、
２０ ｂ 、 ２１＊。15b, 19a is the second phase transfer pulse φ, and the second phase electrode group 11 of the first transfer channel; @
, 11@, 19b is the metal wiring for supplying the second phase transfer pulse φ2 to the JI2 phase electrode group 16 of the second transfer channel.
b, metal wiring for supplying Ilb, 20 a,
20b, 21*.
２１ｂ、２２ｍ、２２ｂ、２３ａ、２３ｂはそれぞれ前
記金属配線７８Ｂ ＋ Ｉ Ｊｌ ｂ ａ １９ＳＬ
＋Ｊ９ｂと前記各電極１４＆、１４Ｔｐ、１５＆ＩＪｌ
ｂ、１６＠、１６ｂ、ｌｌａ、１７ｂとを電気的に接続
する次めの接続部分、２４ａは第１転送チヤネル、２４
ｂは第２転送チヤネルである。21b, 22m, 22b, 23a, and 23b are the metal wirings 78B + I Jl b a 19SL, respectively.
+J9b and each of the electrodes 14&, 14Tp, 15&IJl
b, 16@, 16b, lla, and 17b are electrically connected, 24a is the first transfer channel, 24
b is the second transfer channel.
本実施例は、充電変換素子列で得られた信号を２つの電
荷転送装置に振り分けて搬送する一次元固体イメージセ
ンナに本発明を適用したものである。従って、電荷転送
装置は２相駆動形で１つの転送段が２層構造の電極に↓
り構成されている１、この場合にも、前述同様に同一層
で同一位相転送りロックパルスが印加される電極群が各
々全て一体に形成されている０本実施例も前述の実施例
と同様の効果を有する。In this embodiment, the present invention is applied to a one-dimensional solid-state image sensor that distributes and conveys signals obtained by a charge conversion element array to two charge transfer devices. Therefore, the charge transfer device is a two-phase drive type, with one transfer stage having a two-layer structure of electrodes.
In this case, the electrode groups to which the same phase transfer locking pulse is applied in the same layer are all integrally formed as described above.This embodiment is also similar to the embodiment described above. It has the effect of
なお、本発明は、２相駆動形に限られず単相躯動形、３
相駆動形、４相駆動形にも適用できる。例えば４相駆動
形の場合には、前記第３図の第１．第２転送電極１４ｇ
、１５ａ１６ａ。Note that the present invention is not limited to a two-phase drive type, but can also be applied to a single-phase sliding type, a three-phase
It can also be applied to phase drive type and 4-phase drive type. For example, in the case of a four-phase drive type, the 1. 2nd transfer electrode 14g
, 15a16a.
Ｊ７ａお↓び１４ｂ、１５ｂ、１６ｂ、Ｉｒｂに各々４
相の異なる転送パルスを異なる配線で供給すれば良い。4 each for J7a, 14b, 15b, 16b, and Irb.
Transfer pulses with different phases may be supplied through different wirings.
本発明に工れば、同相パルスが印加されるべき電極群を
一端において全て一体形成しているので、この電極群の
うちいくつかの電極とこの電極群に所定の電圧を印加す
るための配線とのコンタクトが不十分であっても、正常
な転送動作が可能であり、し刀・も構造的に光電変換素
子力・らの信号の受は入れに何らの支障もき九さないよ
うにし得る電荷転送装置を提供できる○According to the present invention, since the electrode group to which in-phase pulses are to be applied is all integrally formed at one end, some electrodes of this electrode group and wiring for applying a predetermined voltage to this electrode group are connected. Normal transfer operation is possible even if there is insufficient contact with the photoelectric conversion element, and the structure of the photoelectric conversion element should not cause any hindrance to reception of signals. We can provide a charge transfer device that can
第１図は従来の一次元固体イメージ七ンサに適用した電
荷転送装置の構成図、第２図は一次元固体イメージセン
サに適用した本発明の一実施例に係る電荷転送装置の構
成図、第３図は本発明の他の実施例に係る電荷転送装置
の構成図である。
１ ａ 〜１ ｄ 、 １２ｈ 〜１２ ｈ＝−充電変
換素子、４．５，１１１ｇ、１８ｂ、１９ｍ、１９ｂ−
金属配線、６．１３・・・移送制御電極、７ａ〜７ｄ。
＃ａ 〜８ｄ、２０ｈ、２０ｂ、２１＠、２１ｂ。
２２ｍ、２２ｂ、２３ｍ、２３ｂ−接続部分、９．１３
−・・転送チャネル、１０ｈ〜１０ｄ。
１４＆、１４ｂ、１５＆、１５ｂ−＄１転送電極、１１
ａ 〜ｌｉｄ、１６ｇ、１６ｂ、１１ｍ。
Ｉｒｂ・・・第２転送電極〇
出願人代理人 弁理士 鈴 江 武 彦第１図
第２図
第３図FIG. 1 is a block diagram of a charge transfer device applied to a conventional one-dimensional solid-state image sensor, and FIG. 2 is a block diagram of a charge transfer device according to an embodiment of the present invention applied to a one-dimensional solid-state image sensor. FIG. 3 is a configuration diagram of a charge transfer device according to another embodiment of the present invention. 1a to 1d, 12h to 12h=-charging conversion element, 4.5,111g, 18b, 19m, 19b-
Metal wiring, 6.13... Transfer control electrode, 7a to 7d. #a ~8d, 20h, 20b, 21@, 21b. 22m, 22b, 23m, 23b - connection part, 9.13
--Transfer channel, 10h to 10d. 14&, 14b, 15&, 15b-$1 transfer electrode, 11
a~lid, 16g, 16b, 11m. Irb...Second transfer electrode〇Applicant's agent Patent attorney Takehiko Suzue Figure 1 Figure 2 Figure 3
Claims (1)
定間隔をあけて配設され、所定のパルス電圧又は直流電
圧の印加に↓り前記基板中で信号電荷を転送する複数個
の転送電極と、この転送電極のうち同位相の転送パルス
あるいは直流電圧が印加される同一層の各電極群を全て
互いに少なくとも一部分で一体形成すると共に、これら
各電極群へ所定電圧のパルスを供給するための金属配線
と前記各電極群との接続部は電荷転送チャネルに対して
並行し次領域の一方側に形成されてなることを特徴とす
る電荷転送装置。 （２）前記電荷転送装置は単相パルスあるいは多相パル
スに↓り駆動される構造を有してなることを特徴とする
特許請求の範囲！ｓ１項記載の電荷転送装置。 （３）前記接続部とは、転送チャンネルを挾んで反対側
に複数個配設された充電変換素子にて得られた信号電荷
は隣接して配置された前記転送電極にて転送されるよう
にしてなることを特徴とする特許請求の範囲第１項記載
の電荷転送装置。 − （４）前記転送電極は、不純物をドープし九導電性多結
晶シリコンで形成されたことを特徴とする特許請求の範
囲第１項記載の電荷転送装置０[Claims] (11) Formed on a semiconductor substrate via an insulating film and disposed at a predetermined distance from each other, signal charges are transferred within the substrate upon application of a predetermined pulse voltage or DC voltage. A plurality of transfer electrodes and each electrode group of the same layer to which a transfer pulse or DC voltage of the same phase is applied among the transfer electrodes are all integrally formed at least in part with each other, and a pulse of a predetermined voltage is applied to each of these electrode groups. A charge transfer device characterized in that a connection portion between the metal wiring for supplying the charge transfer channel and each of the electrode groups is formed on one side of the next region in parallel with the charge transfer channel. (2) The charge transfer device. The charge transfer device according to claim 1, characterized in that the device has a structure that is driven by a single-phase pulse or a multi-phase pulse. (3) The connection portion refers to a transfer channel. Claims characterized in that signal charges obtained by a plurality of charge conversion elements arranged on opposite sides of the charge conversion element are transferred by the transfer electrodes arranged adjacent to each other. The charge transfer device according to claim 1. - (4) The charge transfer device according to claim 1, wherein the transfer electrode is doped with impurities and formed of conductive polycrystalline silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56198191A JPS5898961A (en) | 1981-12-09 | 1981-12-09 | Charge transfer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56198191A JPS5898961A (en) | 1981-12-09 | 1981-12-09 | Charge transfer device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5898961A true JPS5898961A (en) | 1983-06-13 |
| JPH0245345B2 JPH0245345B2 (en) | 1990-10-09 |
Family
ID=16386981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56198191A Granted JPS5898961A (en) | 1981-12-09 | 1981-12-09 | Charge transfer device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5898961A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01130567A (en) * | 1987-11-17 | 1989-05-23 | Sanyo Electric Co Ltd | Charge transfer register |
| EP0522436A2 (en) * | 1991-07-09 | 1993-01-13 | Sony Corporation | CCD linear sensor |
| US5338948A (en) * | 1991-05-10 | 1994-08-16 | Photometrics, Ltd. | Charge-coupled device with open gate structure |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50123285A (en) * | 1974-03-16 | 1975-09-27 | ||
| JPS5337392A (en) * | 1976-09-17 | 1978-04-06 | Sanyo Electric Co Ltd | Driving pulse supplying method of charge coupled type semiconductor device |
| JPS53111284A (en) * | 1971-10-27 | 1978-09-28 | Philips Nv | Charge coupled semiconductor |
| JPS5591869A (en) * | 1978-12-29 | 1980-07-11 | Ibm | Charge coupled device |
| JPS55179074U (en) * | 1979-06-08 | 1980-12-23 | ||
| JPS5861661A (en) * | 1981-10-08 | 1983-04-12 | Toshiba Corp | Charge transfer device |
-
1981
- 1981-12-09 JP JP56198191A patent/JPS5898961A/en active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53111284A (en) * | 1971-10-27 | 1978-09-28 | Philips Nv | Charge coupled semiconductor |
| JPS50123285A (en) * | 1974-03-16 | 1975-09-27 | ||
| JPS5337392A (en) * | 1976-09-17 | 1978-04-06 | Sanyo Electric Co Ltd | Driving pulse supplying method of charge coupled type semiconductor device |
| JPS5591869A (en) * | 1978-12-29 | 1980-07-11 | Ibm | Charge coupled device |
| JPS55179074U (en) * | 1979-06-08 | 1980-12-23 | ||
| JPS5861661A (en) * | 1981-10-08 | 1983-04-12 | Toshiba Corp | Charge transfer device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01130567A (en) * | 1987-11-17 | 1989-05-23 | Sanyo Electric Co Ltd | Charge transfer register |
| US5338948A (en) * | 1991-05-10 | 1994-08-16 | Photometrics, Ltd. | Charge-coupled device with open gate structure |
| EP0522436A2 (en) * | 1991-07-09 | 1993-01-13 | Sony Corporation | CCD linear sensor |
| US5998815A (en) * | 1991-07-09 | 1999-12-07 | Sony Corporation | CCD linear sensor |
| EP0522436B1 (en) * | 1991-07-09 | 2000-01-19 | Sony Corporation | CCD linear sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0245345B2 (en) | 1990-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0746144A2 (en) | CCD type solid state image pickup device | |
| JPS5898961A (en) | Charge transfer device | |
| JP3102348B2 (en) | Color linear image sensor and driving method thereof | |
| KR19990030042A (en) | CD type solid state imaging device | |
| JPH07161970A (en) | Solid-state image pickup device | |
| US7336757B2 (en) | Charge-coupled device | |
| JPH04369186A (en) | Charge coupling device | |
| JPS62208668A (en) | Charge transfer type solid-state image sensing element | |
| EP0420764B1 (en) | Charge transfer device with meander channel | |
| EP0571840B1 (en) | Multiple array linear CCD imager | |
| JP2001244448A (en) | Linear image sensor and method of using the same | |
| JP3008629B2 (en) | Solid-state imaging device | |
| JP3713863B2 (en) | Solid-state image sensor | |
| Hartsell et al. | Design and performance of a three phase double level metal 160× 100 element CCD imager | |
| JP2507725Y2 (en) | Solid-state imaging device | |
| JPH09205192A (en) | Charge coupled device type solid state imaging element and its manufacture and its driving method | |
| JPH0951089A (en) | Charge transfer device and manufacture thereof | |
| JP3158284B2 (en) | Charge transfer device and solid-state imaging device | |
| JPH0669048B2 (en) | Charge transfer device | |
| JP4222022B2 (en) | Solid-state imaging device and driving method thereof | |
| JPH10135442A (en) | Solid state imaging element | |
| JPS63184363A (en) | Solid-state image sensing device | |
| JPH04180265A (en) | Solid-state image sensor | |
| JPH0131751B2 (en) | ||
| JPH1197665A (en) | Solid-state image-pickup device |