JPS52155984A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS52155984A
JPS52155984A JP7280176A JP7280176A JPS52155984A JP S52155984 A JPS52155984 A JP S52155984A JP 7280176 A JP7280176 A JP 7280176A JP 7280176 A JP7280176 A JP 7280176A JP S52155984 A JPS52155984 A JP S52155984A
Authority
JP
Japan
Prior art keywords
transfer device
charge transfer
ctds
semiconductor substrate
power consumption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7280176A
Other languages
Japanese (ja)
Inventor
Kenro Sakagami
Yasoji Suzuki
Katsuo Matsushima
Mineo Iwazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7280176A priority Critical patent/JPS52155984A/en
Publication of JPS52155984A publication Critical patent/JPS52155984A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain driving pulses of high clock frequency and high amplitude by providing CTDs and C-MOS driving circuits on the same semiconductor substrate and further to reduce dark current by reducing power consumption.
JP7280176A 1976-06-22 1976-06-22 Charge transfer device Pending JPS52155984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7280176A JPS52155984A (en) 1976-06-22 1976-06-22 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7280176A JPS52155984A (en) 1976-06-22 1976-06-22 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS52155984A true JPS52155984A (en) 1977-12-24

Family

ID=13499845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7280176A Pending JPS52155984A (en) 1976-06-22 1976-06-22 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS52155984A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619665A (en) * 1979-07-27 1981-02-24 Nec Corp Ccd drive system
JPS5744291A (en) * 1980-08-27 1982-03-12 Toshiba Corp Drive pulse generating circuit of charge transfer element
JPS61125081A (en) * 1984-11-22 1986-06-12 Hitachi Ltd Input circuit of charge coupled device
JPH02302047A (en) * 1989-05-17 1990-12-14 Sony Corp Charge transfer device
JPH03283806A (en) * 1990-03-30 1991-12-13 Fuji Photo Film Co Ltd Ccd output amplifier
US5483357A (en) * 1993-04-27 1996-01-09 Sharp Kabushiki Kaisha Image scanning device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619665A (en) * 1979-07-27 1981-02-24 Nec Corp Ccd drive system
JPS5744291A (en) * 1980-08-27 1982-03-12 Toshiba Corp Drive pulse generating circuit of charge transfer element
JPH0215959B2 (en) * 1980-08-27 1990-04-13 Tokyo Shibaura Electric Co
JPS61125081A (en) * 1984-11-22 1986-06-12 Hitachi Ltd Input circuit of charge coupled device
JPH02302047A (en) * 1989-05-17 1990-12-14 Sony Corp Charge transfer device
JPH03283806A (en) * 1990-03-30 1991-12-13 Fuji Photo Film Co Ltd Ccd output amplifier
US5483357A (en) * 1993-04-27 1996-01-09 Sharp Kabushiki Kaisha Image scanning device

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