JPS53136977A - Driving circuit - Google Patents

Driving circuit

Info

Publication number
JPS53136977A
JPS53136977A JP5146377A JP5146377A JPS53136977A JP S53136977 A JPS53136977 A JP S53136977A JP 5146377 A JP5146377 A JP 5146377A JP 5146377 A JP5146377 A JP 5146377A JP S53136977 A JPS53136977 A JP S53136977A
Authority
JP
Japan
Prior art keywords
driving circuit
fet
turning
voltage
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5146377A
Other languages
Japanese (ja)
Inventor
Kazuhiro Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP5146377A priority Critical patent/JPS53136977A/en
Priority to GB14984/78A priority patent/GB1562577A/en
Priority to US05/903,017 priority patent/US4246498A/en
Publication of JPS53136977A publication Critical patent/JPS53136977A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G04—HOROLOGY
    • G04C—ELECTROMECHANICAL CLOCKS OR WATCHES
    • G04C3/00—Electromechanical clocks or watches independent of other time-pieces and in which the movement is maintained by electric means
    • G04C3/14—Electromechanical clocks or watches independent of other time-pieces and in which the movement is maintained by electric means incorporating a stepping motor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electric Clocks (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a large current driving circuit which is suited to the electronic watch and others, by forming both C-MOS,IC and J-FET on the same semiconductor substrate and turning on the FET when the voltage between the gate and source is "0" and turning off with application of the voltage respectively.
COPYRIGHT: (C)1978,JPO&Japio
JP5146377A 1977-05-04 1977-05-04 Driving circuit Pending JPS53136977A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5146377A JPS53136977A (en) 1977-05-04 1977-05-04 Driving circuit
GB14984/78A GB1562577A (en) 1977-05-04 1978-04-17 Driving circuit
US05/903,017 US4246498A (en) 1977-05-04 1978-05-04 Semiconductor integrated driving circuit including C-MOS and junction FET's

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5146377A JPS53136977A (en) 1977-05-04 1977-05-04 Driving circuit

Publications (1)

Publication Number Publication Date
JPS53136977A true JPS53136977A (en) 1978-11-29

Family

ID=12887624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5146377A Pending JPS53136977A (en) 1977-05-04 1977-05-04 Driving circuit

Country Status (3)

Country Link
US (1) US4246498A (en)
JP (1) JPS53136977A (en)
GB (1) GB1562577A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169168A (en) * 1983-03-16 1984-09-25 Seiko Instr & Electronics Ltd Semiconductor device for driving

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH661160A5 (en) * 1979-08-17 1987-06-30 Sig Schweiz Industrieges METHOD FOR THE OPERATION OF A FOREIGN-EXCITED OR BY-SHIFTED DC MOTOR, ARRANGEMENT FOR IMPLEMENTING THE METHOD AND APPLICATION OF THE METHOD.
EP0686305A1 (en) * 1993-02-25 1995-12-13 National Semiconductor Corporation Fabrication process for cmos device with jfet
US6294959B1 (en) 1999-11-12 2001-09-25 Macmillan Bruce E. Circuit that operates in a manner substantially complementary to an amplifying device included therein and apparatus incorporating same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3591855A (en) * 1969-04-17 1971-07-06 Rca Corp Complementary field-effect transistor buffer circuit
GB1299060A (en) * 1970-07-06 1972-12-06 Suwa Seikosha Kk An electronic driving circuit for a timepiece
DE2359142C2 (en) * 1973-11-28 1982-04-22 Vdo Adolf Schindling Ag, 6000 Frankfurt Electric clock with stepper motor
FR2264434B1 (en) * 1974-03-12 1976-07-16 Thomson Csf
US4093925A (en) * 1975-01-27 1978-06-06 Nippon Gakki Seizo Kabushiki Kaisha Method and system of driving power field effect transistor
JPS5199454A (en) * 1975-02-28 1976-09-02 Hitachi Ltd
JPS5268334A (en) * 1975-12-05 1977-06-07 Toshiba Corp Semiconductor memory
JPS5280063A (en) * 1975-12-26 1977-07-05 Citizen Watch Co Ltd Reversible pulse motor system and watch
US4142111A (en) * 1977-01-27 1979-02-27 Texas Instruments Incorporated One-transistor fully static semiconductor memory cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169168A (en) * 1983-03-16 1984-09-25 Seiko Instr & Electronics Ltd Semiconductor device for driving

Also Published As

Publication number Publication date
GB1562577A (en) 1980-03-12
US4246498A (en) 1981-01-20

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