JPS536582A - Production of constant voltage semiconductor device - Google Patents

Production of constant voltage semiconductor device

Info

Publication number
JPS536582A
JPS536582A JP8119776A JP8119776A JPS536582A JP S536582 A JPS536582 A JP S536582A JP 8119776 A JP8119776 A JP 8119776A JP 8119776 A JP8119776 A JP 8119776A JP S536582 A JPS536582 A JP S536582A
Authority
JP
Japan
Prior art keywords
semiconductor device
constant voltage
voltage semiconductor
production
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8119776A
Other languages
Japanese (ja)
Inventor
Ideo Maeyama
Kenji Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8119776A priority Critical patent/JPS536582A/en
Publication of JPS536582A publication Critical patent/JPS536582A/en
Pending legal-status Critical Current

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  • Control Of Electrical Variables (AREA)

Abstract

PURPOSE:To obtain a constant voltage semiconductor device of particularly less than 5V by superposing an N type layer on an N<++> type substrate, making a P type ion-implanted layer in required poritons and forming an N<++> type layer in said layer.
JP8119776A 1976-07-07 1976-07-07 Production of constant voltage semiconductor device Pending JPS536582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8119776A JPS536582A (en) 1976-07-07 1976-07-07 Production of constant voltage semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8119776A JPS536582A (en) 1976-07-07 1976-07-07 Production of constant voltage semiconductor device

Publications (1)

Publication Number Publication Date
JPS536582A true JPS536582A (en) 1978-01-21

Family

ID=13739739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8119776A Pending JPS536582A (en) 1976-07-07 1976-07-07 Production of constant voltage semiconductor device

Country Status (1)

Country Link
JP (1) JPS536582A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999777A (en) * 1982-11-29 1984-06-08 Nec Home Electronics Ltd Manufacture of semiconductor device
US4886762A (en) * 1985-08-06 1989-12-12 Motorola Inc. Monolithic temperature compensated voltage-reference diode and method for its manufacture

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011780A (en) * 1973-06-04 1975-02-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011780A (en) * 1973-06-04 1975-02-06

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999777A (en) * 1982-11-29 1984-06-08 Nec Home Electronics Ltd Manufacture of semiconductor device
US4886762A (en) * 1985-08-06 1989-12-12 Motorola Inc. Monolithic temperature compensated voltage-reference diode and method for its manufacture

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