JPS56165472A - Solid state image sensor - Google Patents

Solid state image sensor

Info

Publication number
JPS56165472A
JPS56165472A JP6856680A JP6856680A JPS56165472A JP S56165472 A JPS56165472 A JP S56165472A JP 6856680 A JP6856680 A JP 6856680A JP 6856680 A JP6856680 A JP 6856680A JP S56165472 A JPS56165472 A JP S56165472A
Authority
JP
Japan
Prior art keywords
electrode
film
photosensitive
voltage pulse
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6856680A
Other languages
Japanese (ja)
Inventor
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6856680A priority Critical patent/JPS56165472A/en
Publication of JPS56165472A publication Critical patent/JPS56165472A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/701—Line sensors

Abstract

PURPOSE:To avoid a residual-image phenomenon or a leg-cut phenomenon, by putting a fixed potential barrier which does not depend on the voltage pulse applied to a gate electrode between a photosensitive part and the gate electrode. CONSTITUTION:An n<+> type semiconductor layer 26 forming a photosensitive picture element 21 is provided at a part of the surface of a p type semiconductor substrate 25. At the same time, a gate electrode 22 is provided adjacently to the layer 26 via an insulated film 27. A transfer electrode 28 is added orthogonally to the alignment direction of the electrode 22. A light shielding film 29 composed of aluminum is provided on the film 27, and the film 29 is removed at an area opposite to the layer 26 to form a photosensitive window 30. Thus a fixed potential barrier, which does not depend on the voltage pulse applied to the electrode 22 or the induced voltage of the voltage pulse, is put between the photosensitive part and the gate electode to avoid a residual-image or leg-cut phenomenon.
JP6856680A 1980-05-23 1980-05-23 Solid state image sensor Pending JPS56165472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6856680A JPS56165472A (en) 1980-05-23 1980-05-23 Solid state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6856680A JPS56165472A (en) 1980-05-23 1980-05-23 Solid state image sensor

Publications (1)

Publication Number Publication Date
JPS56165472A true JPS56165472A (en) 1981-12-19

Family

ID=13377435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6856680A Pending JPS56165472A (en) 1980-05-23 1980-05-23 Solid state image sensor

Country Status (1)

Country Link
JP (1) JPS56165472A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62237758A (en) * 1986-04-08 1987-10-17 Fuji Photo Film Co Ltd Solid-state image sensing device
JPH01227470A (en) * 1988-03-08 1989-09-11 Toshiba Corp Solid-state image sensing device
JPH0354861A (en) * 1989-07-21 1991-03-08 Nec Corp Solid-state image sensing element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62237758A (en) * 1986-04-08 1987-10-17 Fuji Photo Film Co Ltd Solid-state image sensing device
JPH01227470A (en) * 1988-03-08 1989-09-11 Toshiba Corp Solid-state image sensing device
JPH0354861A (en) * 1989-07-21 1991-03-08 Nec Corp Solid-state image sensing element

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