JPS5762557A - Solid state image pickup device and driving method therefor - Google Patents

Solid state image pickup device and driving method therefor

Info

Publication number
JPS5762557A
JPS5762557A JP55138026A JP13802680A JPS5762557A JP S5762557 A JPS5762557 A JP S5762557A JP 55138026 A JP55138026 A JP 55138026A JP 13802680 A JP13802680 A JP 13802680A JP S5762557 A JPS5762557 A JP S5762557A
Authority
JP
Japan
Prior art keywords
storage region
transferred
conductive type
signal charge
image pickup
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55138026A
Other languages
Japanese (ja)
Other versions
JPH0230189B2 (en
Inventor
Shinichi Teranishi
Yasuo Ishihara
Hiromitsu Shiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55138026A priority Critical patent/JPS5762557A/en
Priority to US06/297,759 priority patent/US4484210A/en
Publication of JPS5762557A publication Critical patent/JPS5762557A/en
Publication of JPH0230189B2 publication Critical patent/JPH0230189B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To provide a solid state image pickup device which reduces the doner density in a storage region, lowers the reverse bias voltage for depeleting the storage region and eliminates the stored image. CONSTITUTION:The second conductive type storage region 1 for storing a signal charge in response to the incident light is formed on the first conductive type semiconductor substrate, the signal charge is transferred to a vertical CCD register 2 when the transfer gate 3 becomes ON state and a channel is formed. when the gate 3 becomes OFF state, a potential barrier is formed between the resistor 2 and the region 1. The signal charge transferred to the vertical register 2 is transferred to the end, and is moved through the horizontal CCD register 4 to an output device 5. At this time the first conductive type surface layer is formed on the overall surface of the storage region 1, and the storage region is completely depleted. Accordingly, a reverse bias voltage, e.g., lower than 30V is applied between the substrate and the storage region 1.
JP55138026A 1980-09-05 1980-10-02 Solid state image pickup device and driving method therefor Granted JPS5762557A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55138026A JPS5762557A (en) 1980-10-02 1980-10-02 Solid state image pickup device and driving method therefor
US06/297,759 US4484210A (en) 1980-09-05 1981-08-31 Solid-state imaging device having a reduced image lag

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55138026A JPS5762557A (en) 1980-10-02 1980-10-02 Solid state image pickup device and driving method therefor

Publications (2)

Publication Number Publication Date
JPS5762557A true JPS5762557A (en) 1982-04-15
JPH0230189B2 JPH0230189B2 (en) 1990-07-04

Family

ID=15212308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55138026A Granted JPS5762557A (en) 1980-09-05 1980-10-02 Solid state image pickup device and driving method therefor

Country Status (1)

Country Link
JP (1) JPS5762557A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58187082A (en) * 1982-04-26 1983-11-01 Matsushita Electric Ind Co Ltd Driving method of solid-state image pickup device
JPS6273662A (en) * 1985-09-26 1987-04-04 Toshiba Corp Manufacture of solid-state image pickup device
JPS62124771A (en) * 1985-11-25 1987-06-06 Sharp Corp Solid-state image pickup device
JPS62145865A (en) * 1985-12-20 1987-06-29 Toshiba Corp Solid-stage image pickup device
JPS63158981A (en) * 1986-12-23 1988-07-01 Sony Corp Solid-state image pickup device
JPH02280377A (en) * 1989-04-20 1990-11-16 Matsushita Electron Corp Solid-state image pickup device and driving method for same
JPH04214670A (en) * 1990-06-14 1992-08-05 Mitsubishi Electric Corp Solid-state image sensing device and manufacture thereof
US6384436B1 (en) 1998-12-04 2002-05-07 Nec Corporation Photoelectric transducer and solid-state image sensing device using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5386516A (en) * 1977-01-10 1978-07-31 Hitachi Ltd Solid state pickup device
JPS5437422A (en) * 1977-08-29 1979-03-19 Toshiba Corp Solid state pickup device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5386516A (en) * 1977-01-10 1978-07-31 Hitachi Ltd Solid state pickup device
JPS5437422A (en) * 1977-08-29 1979-03-19 Toshiba Corp Solid state pickup device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58187082A (en) * 1982-04-26 1983-11-01 Matsushita Electric Ind Co Ltd Driving method of solid-state image pickup device
JPH0414551B2 (en) * 1982-04-26 1992-03-13 Matsushita Electric Ind Co Ltd
JPS6273662A (en) * 1985-09-26 1987-04-04 Toshiba Corp Manufacture of solid-state image pickup device
JPH0574946B2 (en) * 1985-09-26 1993-10-19 Tokyo Shibaura Electric Co
JPS62124771A (en) * 1985-11-25 1987-06-06 Sharp Corp Solid-state image pickup device
JPH0523505B2 (en) * 1985-11-25 1993-04-02 Sharp Kk
JPS62145865A (en) * 1985-12-20 1987-06-29 Toshiba Corp Solid-stage image pickup device
JPH06105782B2 (en) * 1985-12-20 1994-12-21 株式会社東芝 Solid-state imaging device
JPS63158981A (en) * 1986-12-23 1988-07-01 Sony Corp Solid-state image pickup device
JPH02280377A (en) * 1989-04-20 1990-11-16 Matsushita Electron Corp Solid-state image pickup device and driving method for same
JPH04214670A (en) * 1990-06-14 1992-08-05 Mitsubishi Electric Corp Solid-state image sensing device and manufacture thereof
US6384436B1 (en) 1998-12-04 2002-05-07 Nec Corporation Photoelectric transducer and solid-state image sensing device using the same

Also Published As

Publication number Publication date
JPH0230189B2 (en) 1990-07-04

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