JPS5748260A - Interline ccd sensor and driving method thereof - Google Patents

Interline ccd sensor and driving method thereof

Info

Publication number
JPS5748260A
JPS5748260A JP55123258A JP12325880A JPS5748260A JP S5748260 A JPS5748260 A JP S5748260A JP 55123258 A JP55123258 A JP 55123258A JP 12325880 A JP12325880 A JP 12325880A JP S5748260 A JPS5748260 A JP S5748260A
Authority
JP
Japan
Prior art keywords
region
turned
ccd sensor
gate electrode
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55123258A
Other languages
Japanese (ja)
Inventor
Hiromitsu Shiraki
Shinichi Teranishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55123258A priority Critical patent/JPS5748260A/en
Priority to US06/297,759 priority patent/US4484210A/en
Publication of JPS5748260A publication Critical patent/JPS5748260A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To obtain the interline CCD sensor having no after image by method wherein the inverse bias voltage VB, with which the microscopic regions having the conductve type reverse to a substrate will be pinched off, is applied in the unit cell of the image pickup element having a transfering step. CONSTITUTION:The unit cell structure of the interline system CCD sensor is consisted of a P type semiconductor substrate 100, an N type region 301, a gate electrode 102, a barrier region electrode 103 and a storage gate electrode 104. When the electron generated by an incident ray is accumulated in an N type region 301, the potential of the N region is turned to a low level 303. When a ON position is given to the gate electrode 102, it is turned to a high level 119 and the electron of the N region 301 is transfered to the CCD passing through a gate region. With the reduced donor density of the N region and the completely depleted and pinched off N region, the electric charge is not shifted from the N region and no after image is generated when the gate is turned to ON.
JP55123258A 1980-09-05 1980-09-05 Interline ccd sensor and driving method thereof Pending JPS5748260A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55123258A JPS5748260A (en) 1980-09-05 1980-09-05 Interline ccd sensor and driving method thereof
US06/297,759 US4484210A (en) 1980-09-05 1981-08-31 Solid-state imaging device having a reduced image lag

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55123258A JPS5748260A (en) 1980-09-05 1980-09-05 Interline ccd sensor and driving method thereof

Publications (1)

Publication Number Publication Date
JPS5748260A true JPS5748260A (en) 1982-03-19

Family

ID=14856110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55123258A Pending JPS5748260A (en) 1980-09-05 1980-09-05 Interline ccd sensor and driving method thereof

Country Status (1)

Country Link
JP (1) JPS5748260A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051797A (en) * 1989-09-05 1991-09-24 Eastman Kodak Company Charge-coupled device (CCD) imager and method of operation
US5313081A (en) * 1990-07-19 1994-05-17 Kabushiki Kaisha Toshiba Solid-state imaging device with transport channels between photosensitive elements

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437422A (en) * 1977-08-29 1979-03-19 Toshiba Corp Solid state pickup device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437422A (en) * 1977-08-29 1979-03-19 Toshiba Corp Solid state pickup device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051797A (en) * 1989-09-05 1991-09-24 Eastman Kodak Company Charge-coupled device (CCD) imager and method of operation
US5313081A (en) * 1990-07-19 1994-05-17 Kabushiki Kaisha Toshiba Solid-state imaging device with transport channels between photosensitive elements

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