JPS56146375A - Solid-state pickup device - Google Patents

Solid-state pickup device

Info

Publication number
JPS56146375A
JPS56146375A JP4970280A JP4970280A JPS56146375A JP S56146375 A JPS56146375 A JP S56146375A JP 4970280 A JP4970280 A JP 4970280A JP 4970280 A JP4970280 A JP 4970280A JP S56146375 A JPS56146375 A JP S56146375A
Authority
JP
Japan
Prior art keywords
electrode
charge
potential
photoconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4970280A
Other languages
Japanese (ja)
Other versions
JPS6040232B2 (en
Inventor
Takao Chikamura
Takuo Shibata
Yutaka Miyata
Shinji Fujiwara
Shoichi Fukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55049702A priority Critical patent/JPS6040232B2/en
Publication of JPS56146375A publication Critical patent/JPS56146375A/en
Publication of JPS6040232B2 publication Critical patent/JPS6040232B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14672—Blooming suppression

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To prevent the charge from overflowing to a transfer stage while keeping a high sensitivity and then reduce blooming, by applying a potential to a 2nd electrode provided on a photoconductor having the rectifying performance different from that of other 2nd electrodes. CONSTITUTION:The charge storage part 11 and charge transfer part 13 are formed on the semiconductor substrate 10, and the insulated layer 15 is formed so as to cover the substrate 10 plus gate electrodes 12 and 14. In addition, the 1st electrode 16 is formed with every unit element on the aperture part of the layer 15 to be connected electrically to the part 11, and the photoconductor 17 having the rectifying performance is formed so as to cover the electrode 16 and the layer 15. At the same time, the 2nd electrodes 18 and 19 are formed on the photoconductor 17. Then the potential V1 is applied to the electrode 18; while the potential V2 is applied to the electrode 19. The charge is supplied by the electrode 18 or 19 when the incident light 20 becomes intensive to cause a drop of potential at the part 11. Thus the charge is prevented from overflowing to the part 13 while keeping a high sensitivity. In such way, the blooming is suppressed.
JP55049702A 1980-04-15 1980-04-15 solid-state imaging device Expired JPS6040232B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55049702A JPS6040232B2 (en) 1980-04-15 1980-04-15 solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55049702A JPS6040232B2 (en) 1980-04-15 1980-04-15 solid-state imaging device

Publications (2)

Publication Number Publication Date
JPS56146375A true JPS56146375A (en) 1981-11-13
JPS6040232B2 JPS6040232B2 (en) 1985-09-10

Family

ID=12838510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55049702A Expired JPS6040232B2 (en) 1980-04-15 1980-04-15 solid-state imaging device

Country Status (1)

Country Link
JP (1) JPS6040232B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0186162A2 (en) * 1984-12-24 1986-07-02 Kabushiki Kaisha Toshiba Solid state image sensor
EP1122790A2 (en) * 2000-02-03 2001-08-08 Agilent Technologies Inc. a Delaware Corporation A conductive mesh bias connection for an array of elevated active pixel sensors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0186162A2 (en) * 1984-12-24 1986-07-02 Kabushiki Kaisha Toshiba Solid state image sensor
US4688098A (en) * 1984-12-24 1987-08-18 Kabushiki Kaisha Toshiba Solid state image sensor with means for removing excess photocharges
EP1122790A2 (en) * 2000-02-03 2001-08-08 Agilent Technologies Inc. a Delaware Corporation A conductive mesh bias connection for an array of elevated active pixel sensors
EP1122790A3 (en) * 2000-02-03 2003-12-03 Agilent Technologies, Inc. (a Delaware corporation) A conductive mesh bias connection for an array of elevated active pixel sensors

Also Published As

Publication number Publication date
JPS6040232B2 (en) 1985-09-10

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