JPS6442635A - Active matrix type display element - Google Patents

Active matrix type display element

Info

Publication number
JPS6442635A
JPS6442635A JP62199032A JP19903287A JPS6442635A JP S6442635 A JPS6442635 A JP S6442635A JP 62199032 A JP62199032 A JP 62199032A JP 19903287 A JP19903287 A JP 19903287A JP S6442635 A JPS6442635 A JP S6442635A
Authority
JP
Japan
Prior art keywords
electrode
shielding film
picture element
accumulation capacity
titled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62199032A
Other languages
Japanese (ja)
Other versions
JP2536766B2 (en
Inventor
Nobuhiko Imashiro
Masaki Yuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP62199032A priority Critical patent/JP2536766B2/en
Publication of JPS6442635A publication Critical patent/JPS6442635A/en
Application granted granted Critical
Publication of JP2536766B2 publication Critical patent/JP2536766B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the deterioration of the surface quality in the titled element by forming a light shielding film composed of a conductive substance on a part where the semiconductor layer of an active device is not shielded by an electrode, a part where the electrode is not provided and a part of a picture element electrode, respectively. CONSTITUTION:The shielding film 9 for the shielding film, the accumulation capacity and the black matrix is used for the accumulation capacity by being connected with an external terminal. Namely, the shielding film is mounted on the part 11 where a source electrode or a drain electrode is not formed. And, the picture element electrode for display, the part 12 forming the accumulation capacity faced to the part of said electrode and the part 13 constituting of the black matrix, namely the part 13 except an opaque gate electrode, the source electrode, the drain electrode and the transparent picture element electrode for display, are covered with the shielding film, respectively. Thus, the increase of an off-state current is suppressed at the time of a light state of the titled element, thereby enabling the stable driving and preventing the reduction of contrast in the titled element.
JP62199032A 1987-08-11 1987-08-11 Active matrix display device Expired - Lifetime JP2536766B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62199032A JP2536766B2 (en) 1987-08-11 1987-08-11 Active matrix display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62199032A JP2536766B2 (en) 1987-08-11 1987-08-11 Active matrix display device

Publications (2)

Publication Number Publication Date
JPS6442635A true JPS6442635A (en) 1989-02-14
JP2536766B2 JP2536766B2 (en) 1996-09-18

Family

ID=16400980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62199032A Expired - Lifetime JP2536766B2 (en) 1987-08-11 1987-08-11 Active matrix display device

Country Status (1)

Country Link
JP (1) JP2536766B2 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0219840A (en) * 1988-07-08 1990-01-23 Hitachi Ltd Manufacture of active matrix panel
JPH0469622A (en) * 1990-07-10 1992-03-04 Nec Corp Active matrix type liquid crystal display device
US5130829A (en) * 1990-06-27 1992-07-14 U.S. Philips Corporation Active matrix liquid crystal display devices having a metal light shield for each switching device electrically connected to an adjacent row address conductor
JPH04319920A (en) * 1991-04-19 1992-11-10 Sharp Corp Active matrix liquid crystal display
US5237436A (en) * 1990-12-14 1993-08-17 North American Philips Corporation Active matrix electro-optic display device with light shielding layer and projection and color employing same
US5245450A (en) * 1990-07-23 1993-09-14 Hosiden Corporation Liquid crystal display device with control capacitors for gray-scale
US5426313A (en) * 1993-04-22 1995-06-20 Nec Corporation Thin film transistor array having optical shield layer
JPH0815670A (en) * 1994-06-28 1996-01-19 Nec Corp Active matrix type liquid crystal display device
US5499123A (en) * 1992-10-27 1996-03-12 Nec Corporation Active matrix liquid crystal display cell with light blocking capacitor electrode above insulating layer
JP2000284722A (en) * 1999-01-29 2000-10-13 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
JP2013008955A (en) * 2011-05-24 2013-01-10 Semiconductor Energy Lab Co Ltd Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068326A (en) * 1984-07-16 1985-04-18 Canon Inc Thin film transistor substrate
JPS60133493A (en) * 1983-12-21 1985-07-16 三菱電機株式会社 Matrix type liquid crystal display
JPS60207116A (en) * 1984-03-31 1985-10-18 Toshiba Corp Display electrode array

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133493A (en) * 1983-12-21 1985-07-16 三菱電機株式会社 Matrix type liquid crystal display
JPS60207116A (en) * 1984-03-31 1985-10-18 Toshiba Corp Display electrode array
JPS6068326A (en) * 1984-07-16 1985-04-18 Canon Inc Thin film transistor substrate

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0219840A (en) * 1988-07-08 1990-01-23 Hitachi Ltd Manufacture of active matrix panel
US5130829A (en) * 1990-06-27 1992-07-14 U.S. Philips Corporation Active matrix liquid crystal display devices having a metal light shield for each switching device electrically connected to an adjacent row address conductor
JPH0469622A (en) * 1990-07-10 1992-03-04 Nec Corp Active matrix type liquid crystal display device
US5245450A (en) * 1990-07-23 1993-09-14 Hosiden Corporation Liquid crystal display device with control capacitors for gray-scale
US5321535A (en) * 1990-07-23 1994-06-14 Hosiden Corporation Liquid crystal display device with control capacitors for gray scale
US5237436A (en) * 1990-12-14 1993-08-17 North American Philips Corporation Active matrix electro-optic display device with light shielding layer and projection and color employing same
JPH04319920A (en) * 1991-04-19 1992-11-10 Sharp Corp Active matrix liquid crystal display
US5499123A (en) * 1992-10-27 1996-03-12 Nec Corporation Active matrix liquid crystal display cell with light blocking capacitor electrode above insulating layer
US5426313A (en) * 1993-04-22 1995-06-20 Nec Corporation Thin film transistor array having optical shield layer
JPH0815670A (en) * 1994-06-28 1996-01-19 Nec Corp Active matrix type liquid crystal display device
JP2000284722A (en) * 1999-01-29 2000-10-13 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
JP2013008955A (en) * 2011-05-24 2013-01-10 Semiconductor Energy Lab Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JP2536766B2 (en) 1996-09-18

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