JPS5724171A - Solid state image sensor - Google Patents

Solid state image sensor

Info

Publication number
JPS5724171A
JPS5724171A JP9922880A JP9922880A JPS5724171A JP S5724171 A JPS5724171 A JP S5724171A JP 9922880 A JP9922880 A JP 9922880A JP 9922880 A JP9922880 A JP 9922880A JP S5724171 A JPS5724171 A JP S5724171A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor substrate
electrodes
gap
insulation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9922880A
Other languages
Japanese (ja)
Inventor
Yutaka Miyata
Takao Chikamura
Tadanaka Yoneda
Hiroshi Kuroda
Takamichi Wada
Shinji Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9922880A priority Critical patent/JPS5724171A/en
Publication of JPS5724171A publication Critical patent/JPS5724171A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14672—Blooming suppression

Abstract

PURPOSE:To suppress blooming, by covering the gap between the 1st electrodes with a light shield and avoiding carriers produced in a semiconductor substrate. CONSTITUTION:To a P type semiconductor substrate 10, N<+> type regions 11, 12 are formed and diodes are provided. An insulation layer 15 electrically separates the 1st electrode 16, semiconductor substrate 10 and the 1st gate electrode 13. The electrode 16 is the diode electrode connected electrically with the region 11 and also the electrode for positive hole blocking layer 17 and it is insulated with adjacent video elements for video element separation. An incident light 21 is radiated from a transparent electrode 19 on a photo conductor layer 18. A photo shield 20 made of high melting point metal or its silicide covers the gap between the 1st electrodes and it is inserted in the insulation layer 15.
JP9922880A 1980-07-18 1980-07-18 Solid state image sensor Pending JPS5724171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9922880A JPS5724171A (en) 1980-07-18 1980-07-18 Solid state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9922880A JPS5724171A (en) 1980-07-18 1980-07-18 Solid state image sensor

Publications (1)

Publication Number Publication Date
JPS5724171A true JPS5724171A (en) 1982-02-08

Family

ID=14241806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9922880A Pending JPS5724171A (en) 1980-07-18 1980-07-18 Solid state image sensor

Country Status (1)

Country Link
JP (1) JPS5724171A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728481A (en) * 1980-07-28 1982-02-16 Matsushita Electric Ind Co Ltd Solidstate image sensor
JPS57207364A (en) * 1981-06-16 1982-12-20 Matsushita Electric Ind Co Ltd Solid state image pickup device
JPS60102769A (en) * 1983-11-09 1985-06-06 Toshiba Corp Solid image pick-up device
JPS60189379A (en) * 1984-03-08 1985-09-26 Matsushita Electric Ind Co Ltd Solid-state image pickup device
JPS6149465A (en) * 1984-08-17 1986-03-11 Matsushita Electronics Corp Solid-state image pickup device
US4621275A (en) * 1983-04-30 1986-11-04 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device
US5084749A (en) * 1988-08-25 1992-01-28 Eastman Kodak Company Image sensing device with reduced smear
US5264374A (en) * 1987-09-04 1993-11-23 Kabushiki Kaisha Toshiba Method of manufacturing a solid state image sensing device
DE102009025581A1 (en) * 2009-06-19 2011-01-05 Siemens Aktiengesellschaft Method for protecting e.g. semiconductor chip of fluoroscopy device from radiation, involves coating electric component with silicide layer, where layer thickness is selected such that radiation is dampened or completely absorbed

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728481A (en) * 1980-07-28 1982-02-16 Matsushita Electric Ind Co Ltd Solidstate image sensor
JPS57207364A (en) * 1981-06-16 1982-12-20 Matsushita Electric Ind Co Ltd Solid state image pickup device
US4621275A (en) * 1983-04-30 1986-11-04 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device
JPS60102769A (en) * 1983-11-09 1985-06-06 Toshiba Corp Solid image pick-up device
JPH0586669B2 (en) * 1983-11-09 1993-12-13 Tokyo Shibaura Electric Co
JPS60189379A (en) * 1984-03-08 1985-09-26 Matsushita Electric Ind Co Ltd Solid-state image pickup device
JPS6149465A (en) * 1984-08-17 1986-03-11 Matsushita Electronics Corp Solid-state image pickup device
US5264374A (en) * 1987-09-04 1993-11-23 Kabushiki Kaisha Toshiba Method of manufacturing a solid state image sensing device
US5084749A (en) * 1988-08-25 1992-01-28 Eastman Kodak Company Image sensing device with reduced smear
DE102009025581A1 (en) * 2009-06-19 2011-01-05 Siemens Aktiengesellschaft Method for protecting e.g. semiconductor chip of fluoroscopy device from radiation, involves coating electric component with silicide layer, where layer thickness is selected such that radiation is dampened or completely absorbed

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