JPS56140772A - Solid state pickup device - Google Patents

Solid state pickup device

Info

Publication number
JPS56140772A
JPS56140772A JP4395080A JP4395080A JPS56140772A JP S56140772 A JPS56140772 A JP S56140772A JP 4395080 A JP4395080 A JP 4395080A JP 4395080 A JP4395080 A JP 4395080A JP S56140772 A JPS56140772 A JP S56140772A
Authority
JP
Japan
Prior art keywords
electrode
gap
region
substrate
solid state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4395080A
Other languages
Japanese (ja)
Other versions
JPS611956B2 (en
Inventor
Yutaka Miyata
Takao Chikamura
Takuo Shibata
Shinji Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4395080A priority Critical patent/JPS56140772A/en
Priority to US06/249,498 priority patent/US4789888A/en
Publication of JPS56140772A publication Critical patent/JPS56140772A/en
Publication of JPS611956B2 publication Critical patent/JPS611956B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14665Imagers using a photoconductor layer
    • H01L27/14672Blooming suppression

Abstract

PURPOSE:To reduce the blooming phenomenon, by covering the gap between the electrodes with a light shielding material and eliminating the carrier that is generated in a semiconductor substrate passed through the said gap. CONSTITUTION:The n<+> type region 11 is formed on the p type semiconductor substrate 10 along with installation of a diode. In addition, a well 12 having the potential of the region 11 is provided. The gate electrode 13 has an area overlapping the region 11. A gate oxide film 14 of an insulator is provided between the substrate 10 and the electrode 13. In the electrode 16, the substrate 10 is separated electrically from the electrode 13 with the insulator layer 15. A transparent electrode 19 is formed on the photoconductor 18. The gap between the electrode 16 is covered with the light shielding material 20.
JP4395080A 1980-04-02 1980-04-02 Solid state pickup device Granted JPS56140772A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4395080A JPS56140772A (en) 1980-04-02 1980-04-02 Solid state pickup device
US06/249,498 US4789888A (en) 1980-04-02 1981-03-31 Solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4395080A JPS56140772A (en) 1980-04-02 1980-04-02 Solid state pickup device

Publications (2)

Publication Number Publication Date
JPS56140772A true JPS56140772A (en) 1981-11-04
JPS611956B2 JPS611956B2 (en) 1986-01-21

Family

ID=12677979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4395080A Granted JPS56140772A (en) 1980-04-02 1980-04-02 Solid state pickup device

Country Status (1)

Country Link
JP (1) JPS56140772A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204762A (en) * 1987-10-30 1993-04-20 Canon Kabushiki Kaisha Image reading device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204762A (en) * 1987-10-30 1993-04-20 Canon Kabushiki Kaisha Image reading device

Also Published As

Publication number Publication date
JPS611956B2 (en) 1986-01-21

Similar Documents

Publication Publication Date Title
JPS55120182A (en) Photoelectric converter
JPS57160159A (en) High breakdown voltage planar type semiconductor device
GB1105269A (en) Photosensitive semiconductor devices
JPS5724171A (en) Solid state image sensor
JPS56140772A (en) Solid state pickup device
JPS57162372A (en) Semiconductor radiation detector
GB1520965A (en) Opto-electronic sensors
JPS5728481A (en) Solidstate image sensor
JPS551151A (en) Photoconductive element
JPS5527772A (en) Solid state pickup device
JPS5753182A (en) Solid-state image pickup device
JPS5630373A (en) Solid image pickup unit
JPS57120385A (en) Image pick up solid element
JPS56156840A (en) Electrostatic light recording method
JPS5721876A (en) Photosensor
JPS56146375A (en) Solid-state pickup device
JPS57183076A (en) Field control type optical semiconductor device
JPS5635463A (en) Semiconductor device
JPS56165472A (en) Solid state image sensor
JPS5724566A (en) Protective circuit for mos type gate
JPS5669879A (en) Semiconductor luminous device with lens
JPS5775073A (en) Solid image pickup device
JPS52151576A (en) Semiconductor device
JPS56132875A (en) Solid image pickup equipment
JPS57145369A (en) Integrated circuit device