JPS56140772A - Solid state pickup device - Google Patents
Solid state pickup deviceInfo
- Publication number
- JPS56140772A JPS56140772A JP4395080A JP4395080A JPS56140772A JP S56140772 A JPS56140772 A JP S56140772A JP 4395080 A JP4395080 A JP 4395080A JP 4395080 A JP4395080 A JP 4395080A JP S56140772 A JPS56140772 A JP S56140772A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gap
- region
- substrate
- solid state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 239000012212 insulator Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000009434 installation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14672—Blooming suppression
Abstract
PURPOSE:To reduce the blooming phenomenon, by covering the gap between the electrodes with a light shielding material and eliminating the carrier that is generated in a semiconductor substrate passed through the said gap. CONSTITUTION:The n<+> type region 11 is formed on the p type semiconductor substrate 10 along with installation of a diode. In addition, a well 12 having the potential of the region 11 is provided. The gate electrode 13 has an area overlapping the region 11. A gate oxide film 14 of an insulator is provided between the substrate 10 and the electrode 13. In the electrode 16, the substrate 10 is separated electrically from the electrode 13 with the insulator layer 15. A transparent electrode 19 is formed on the photoconductor 18. The gap between the electrode 16 is covered with the light shielding material 20.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4395080A JPS56140772A (en) | 1980-04-02 | 1980-04-02 | Solid state pickup device |
US06/249,498 US4789888A (en) | 1980-04-02 | 1981-03-31 | Solid-state image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4395080A JPS56140772A (en) | 1980-04-02 | 1980-04-02 | Solid state pickup device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56140772A true JPS56140772A (en) | 1981-11-04 |
JPS611956B2 JPS611956B2 (en) | 1986-01-21 |
Family
ID=12677979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4395080A Granted JPS56140772A (en) | 1980-04-02 | 1980-04-02 | Solid state pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56140772A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5204762A (en) * | 1987-10-30 | 1993-04-20 | Canon Kabushiki Kaisha | Image reading device |
-
1980
- 1980-04-02 JP JP4395080A patent/JPS56140772A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5204762A (en) * | 1987-10-30 | 1993-04-20 | Canon Kabushiki Kaisha | Image reading device |
Also Published As
Publication number | Publication date |
---|---|
JPS611956B2 (en) | 1986-01-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55120182A (en) | Photoelectric converter | |
JPS57160159A (en) | High breakdown voltage planar type semiconductor device | |
GB1105269A (en) | Photosensitive semiconductor devices | |
JPS5724171A (en) | Solid state image sensor | |
JPS56140772A (en) | Solid state pickup device | |
JPS57162372A (en) | Semiconductor radiation detector | |
GB1520965A (en) | Opto-electronic sensors | |
JPS5728481A (en) | Solidstate image sensor | |
JPS551151A (en) | Photoconductive element | |
JPS5527772A (en) | Solid state pickup device | |
JPS5753182A (en) | Solid-state image pickup device | |
JPS5630373A (en) | Solid image pickup unit | |
JPS57120385A (en) | Image pick up solid element | |
JPS56156840A (en) | Electrostatic light recording method | |
JPS5721876A (en) | Photosensor | |
JPS56146375A (en) | Solid-state pickup device | |
JPS57183076A (en) | Field control type optical semiconductor device | |
JPS5635463A (en) | Semiconductor device | |
JPS56165472A (en) | Solid state image sensor | |
JPS5724566A (en) | Protective circuit for mos type gate | |
JPS5669879A (en) | Semiconductor luminous device with lens | |
JPS5775073A (en) | Solid image pickup device | |
JPS52151576A (en) | Semiconductor device | |
JPS56132875A (en) | Solid image pickup equipment | |
JPS57145369A (en) | Integrated circuit device |