JPS57145369A - Integrated circuit device - Google Patents

Abstract

PURPOSE:To avoid degradation of resolution, in a light detecting integrated circuit wherein a light detecting device and a charge transfer device are provided on the same semiconductor substrate, and the area other than a photoelectric transducing part and a metallic thin film for wiring is coated by a screening metallic thin film, by providing a region having a conductive type which is diferent from that of the substrate in the substrate where a light screening thin film is not present. CONSTITUTION:A channel stopping region 8 is diffused and formed in a P type Si substrate 11. A hotoelectric detecting device 7C is provided so as to contact with the region 8. Thick field oxide film parts 10 are formed on the region 8 and on the end part of the substrate 11 facing the region 8, respectively. Then a thin gate oxide film 9 is deposited on the surface of the substrate 11 surrounded by the film 10. The output transfer electrode 6, a gate electrode, and the wiring metallic thin film 2 which is connected thereto are provided on the film 9. An oxide film 12 is deposited so as to contact with the gate electrode. The wiring metallic thin films 3 and 4 are provided on the film 12. The area other than the region 7C and the thin films 2-4 is coated by the light screening metallic thin film 1. In this constitution, a carrier absorbing, N<+> type, diffused layer 13 is provided beneath the films 10 in correspondence with the thin films 2-4, and a reverse bias is applied to the layer 13.