JPS5732683A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5732683A
JPS5732683A JP10849180A JP10849180A JPS5732683A JP S5732683 A JPS5732683 A JP S5732683A JP 10849180 A JP10849180 A JP 10849180A JP 10849180 A JP10849180 A JP 10849180A JP S5732683 A JPS5732683 A JP S5732683A
Authority
JP
Japan
Prior art keywords
detector
film
type
nonrectifying
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10849180A
Other languages
Japanese (ja)
Other versions
JPS6320384B2 (en
Inventor
Kunihiro Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10849180A priority Critical patent/JPS5732683A/en
Publication of JPS5732683A publication Critical patent/JPS5732683A/en
Publication of JPS6320384B2 publication Critical patent/JPS6320384B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To form a small-sized and compact semiconductor device by covering a detector directly on a substrate on which circuit elements are formed. CONSTITUTION:An epitaxially grown layer 7 of Hg1-xCdxTe is formed on a source region 2, and is functioned as a detector. The substrate 7a of the detector 7 is contacted in a nonrectifying manner with the N<+> type source region 2 of an MOST. A P type region 7b is formed on the upper surface of the detector 7, and the detector 7 is operated as a photovoltaic type photoelectric converter. A thin metallic film 8 is a wire contacted in a nonrectifying manner with the P type region 7b of the detector 7, extends onto the upper part of a field oxidized film 5, and is placed on a ZnS film 9 superposed on the film 5.
JP10849180A 1980-08-06 1980-08-06 Semiconductor device Granted JPS5732683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10849180A JPS5732683A (en) 1980-08-06 1980-08-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10849180A JPS5732683A (en) 1980-08-06 1980-08-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5732683A true JPS5732683A (en) 1982-02-22
JPS6320384B2 JPS6320384B2 (en) 1988-04-27

Family

ID=14486111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10849180A Granted JPS5732683A (en) 1980-08-06 1980-08-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5732683A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147568A (en) * 1984-12-21 1986-07-05 Hamamatsu Photonics Kk Infrared ray image senser
US5410168A (en) * 1991-11-06 1995-04-25 Mitsubishi Denki Kabushiki Kaisha Infrared imaging device
JP2013084757A (en) * 2011-10-10 2013-05-09 Denso Corp Imaging element
JP2013527597A (en) * 2010-03-19 2013-06-27 インヴィサージ テクノロジーズ インコーポレイテッド Image sensor using photosensitive semiconductor diode

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519591A (en) * 1974-07-13 1976-01-26 Fujitsu Ltd
JPS528788A (en) * 1975-07-10 1977-01-22 Nec Corp Charge transfer exposer
JPS5493958A (en) * 1978-01-06 1979-07-25 Takashi Katouda Method of forming semiconductor hetero junction

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519591A (en) * 1974-07-13 1976-01-26 Fujitsu Ltd
JPS528788A (en) * 1975-07-10 1977-01-22 Nec Corp Charge transfer exposer
JPS5493958A (en) * 1978-01-06 1979-07-25 Takashi Katouda Method of forming semiconductor hetero junction

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147568A (en) * 1984-12-21 1986-07-05 Hamamatsu Photonics Kk Infrared ray image senser
US5410168A (en) * 1991-11-06 1995-04-25 Mitsubishi Denki Kabushiki Kaisha Infrared imaging device
JP2013527597A (en) * 2010-03-19 2013-06-27 インヴィサージ テクノロジーズ インコーポレイテッド Image sensor using photosensitive semiconductor diode
US9972653B2 (en) 2010-03-19 2018-05-15 Invisage Technologies, Inc. Image sensors employing sensitized semiconductor diodes
JP2013084757A (en) * 2011-10-10 2013-05-09 Denso Corp Imaging element

Also Published As

Publication number Publication date
JPS6320384B2 (en) 1988-04-27

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