JPS5730366A - Schottky transistor and manufacture thereof - Google Patents

Schottky transistor and manufacture thereof

Info

Publication number
JPS5730366A
JPS5730366A JP10367180A JP10367180A JPS5730366A JP S5730366 A JPS5730366 A JP S5730366A JP 10367180 A JP10367180 A JP 10367180A JP 10367180 A JP10367180 A JP 10367180A JP S5730366 A JPS5730366 A JP S5730366A
Authority
JP
Japan
Prior art keywords
film
collector
substrate
region
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10367180A
Other languages
Japanese (ja)
Other versions
JPS641064B2 (en
Inventor
Jun Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP10367180A priority Critical patent/JPS5730366A/en
Publication of JPS5730366A publication Critical patent/JPS5730366A/en
Publication of JPS641064B2 publication Critical patent/JPS641064B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To reduce the wiring capacity, bonding capacities between the base and the collector, and bonding capacities between the collector and the substrate of a Schottky transistor by covering a polycrystalline silion film formed on an emitter region and collector and contacting region with an oxidized film. CONSTITUTION:A semiconductor substrate 21 is formed by diffusing an N<+> type buried layer 23 in a P type silicon substrate 22 and growing a silicon epitaxial layer 24 on the substrate 22. On the surfaces are formed an isolation oxidized film 37, a collector and contacting region 37, a polycrystalline silicon film 44, an emitter regions 46 and an oxidized film 47, etc. The film 44 formed on the regions 46 and 37 is covered with a n oxided film 47. In this manner, the width of the wires formed on the region 46 and 37 can be reduced in width.
JP10367180A 1980-07-30 1980-07-30 Schottky transistor and manufacture thereof Granted JPS5730366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10367180A JPS5730366A (en) 1980-07-30 1980-07-30 Schottky transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10367180A JPS5730366A (en) 1980-07-30 1980-07-30 Schottky transistor and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5730366A true JPS5730366A (en) 1982-02-18
JPS641064B2 JPS641064B2 (en) 1989-01-10

Family

ID=14360247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10367180A Granted JPS5730366A (en) 1980-07-30 1980-07-30 Schottky transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5730366A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989248A (en) * 1982-11-11 1984-05-23 Nippon Sekisoo Kogyo Kk Method of fabricating interior decorative board for car
JPS59121872A (en) * 1982-12-15 1984-07-14 Fujitsu Ltd Semiconductor device
JPS59161060A (en) * 1982-12-20 1984-09-11 レイセオン　カンパニ− Method of producing semiconductor device
JPS6362369A (en) * 1986-09-03 1988-03-18 Nec Corp Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5146869A (en) * 1974-10-18 1976-04-21 Mitsubishi Electric Corp Handotaisochino denkyoku
JPS55903A (en) * 1978-05-22 1980-01-07 Nippon Abionikusu Kk Instantaneous heating system thermal pressure bonding and temperature controller of re-flow unit
JPS5563821A (en) * 1978-11-06 1980-05-14 Nec Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5146869A (en) * 1974-10-18 1976-04-21 Mitsubishi Electric Corp Handotaisochino denkyoku
JPS55903A (en) * 1978-05-22 1980-01-07 Nippon Abionikusu Kk Instantaneous heating system thermal pressure bonding and temperature controller of re-flow unit
JPS5563821A (en) * 1978-11-06 1980-05-14 Nec Corp Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989248A (en) * 1982-11-11 1984-05-23 Nippon Sekisoo Kogyo Kk Method of fabricating interior decorative board for car
JPS59121872A (en) * 1982-12-15 1984-07-14 Fujitsu Ltd Semiconductor device
JPS59161060A (en) * 1982-12-20 1984-09-11 レイセオン　カンパニ− Method of producing semiconductor device
JPH0510827B2 (en) * 1982-12-20 1993-02-10 Raytheon Co
JPS6362369A (en) * 1986-09-03 1988-03-18 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS641064B2 (en) 1989-01-10

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