JPS55143053A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55143053A
JPS55143053A JP5029079A JP5029079A JPS55143053A JP S55143053 A JPS55143053 A JP S55143053A JP 5029079 A JP5029079 A JP 5029079A JP 5029079 A JP5029079 A JP 5029079A JP S55143053 A JPS55143053 A JP S55143053A
Authority
JP
Japan
Prior art keywords
insulating film
layer
alpha rays
prepared
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5029079A
Other languages
Japanese (ja)
Inventor
Kanji Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5029079A priority Critical patent/JPS55143053A/en
Publication of JPS55143053A publication Critical patent/JPS55143053A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To prevent the malfunction of a semiconductor device by a method wherein a high purity metal film is put upon a surface insulating film part of semiconductor chip excepting electrode pad to intercept alpha rays. CONSTITUTION:A wiring layer 14 is prepared on an SiO2 film 13 on an Si substrate 11, and is one end is connected to an active layer 12 and another end is extended to the neighborhood of edge of chip. An insulating film 15 is prepared to cover the wiring layer 14, a pad 16 connected to the wiring layer 14 is arranged on the insulating film 15 in the neighborhood of chip edge and an alpha rays shielding high purity Al layer 17 is prepared on the insulating film 15 excepting pad arranged part. The thickness of Al layer 17 from the range of alpha rays (25-40mum) to above 20mum will do. Moreover the insulating film on the layer 12 is made to be thick to prevent an increase of electrostatic capacity. By this constitution, the incident quantity of alpha rays upon the active layer decreases sharply and the malfunction can be prevented.
JP5029079A 1979-04-25 1979-04-25 Semiconductor device Pending JPS55143053A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5029079A JPS55143053A (en) 1979-04-25 1979-04-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5029079A JPS55143053A (en) 1979-04-25 1979-04-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55143053A true JPS55143053A (en) 1980-11-08

Family

ID=12854776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5029079A Pending JPS55143053A (en) 1979-04-25 1979-04-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55143053A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110277375A (en) * 2018-03-15 2019-09-24 东芝存储器株式会社 Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110277375A (en) * 2018-03-15 2019-09-24 东芝存储器株式会社 Semiconductor device
TWI692067B (en) * 2018-03-15 2020-04-21 日商東芝記憶體股份有限公司 Semiconductor device
US10916508B2 (en) 2018-03-15 2021-02-09 Toshiba Memory Corporation Semiconductor device package with radiation shield
CN110277375B (en) * 2018-03-15 2023-08-22 铠侠股份有限公司 Semiconductor device with a semiconductor device having a plurality of semiconductor chips

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