JPS5721849A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5721849A
JPS5721849A JP9606880A JP9606880A JPS5721849A JP S5721849 A JPS5721849 A JP S5721849A JP 9606880 A JP9606880 A JP 9606880A JP 9606880 A JP9606880 A JP 9606880A JP S5721849 A JPS5721849 A JP S5721849A
Authority
JP
Japan
Prior art keywords
semiconductor region
shielding
layer
integrated circuit
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9606880A
Other languages
Japanese (ja)
Inventor
Katsuyuki Inayoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9606880A priority Critical patent/JPS5721849A/en
Publication of JPS5721849A publication Critical patent/JPS5721849A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an integrated circuit which has higher noise shielding effect by forming a semiconductor region of another layer in a semiconductor region for shielding noise and reducing its intrinsic resistance. CONSTITUTION:A P<-> type well region 5' and an N<+> type conductive type layer 7' are formed in an N type silicon substrate 6', and dioxidized silicon film 4', polycrystalline silicon layer 3', dioxidized silicon layer 2', and polycrystalline silicon layer 1' are formed thereon. Another semiconductor region 7' is formed in the semiconductor region 5' for shielding the capacity, and since the intrinsic resistance value under the capacity is thus reduced, the shield can be further completed. The shielding region can be formed simultaneously in the step of manufacturing the C-MOS.
JP9606880A 1980-07-14 1980-07-14 Semiconductor integrated circuit Pending JPS5721849A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9606880A JPS5721849A (en) 1980-07-14 1980-07-14 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9606880A JPS5721849A (en) 1980-07-14 1980-07-14 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5721849A true JPS5721849A (en) 1982-02-04

Family

ID=14155097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9606880A Pending JPS5721849A (en) 1980-07-14 1980-07-14 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5721849A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58192357A (en) * 1982-05-07 1983-11-09 Hitachi Ltd Semiconductor device
JPS5989796A (en) * 1982-11-12 1984-05-24 Hitachi Condenser Co Ltd Manufacture of aluminum foil for electrolytic capacitor
JPH0243717A (en) * 1988-08-03 1990-02-14 Shinei Tsushin Kogyo Kk Manufacture of electrode foil for aluminum electrolytic capacitor
JPH08236709A (en) * 1996-02-09 1996-09-13 Nippondenso Co Ltd Semiconductor device
US5594279A (en) * 1992-11-12 1997-01-14 Texas Instruments Incorporated Semiconductor device having shield wiring for noise suppression

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4883787A (en) * 1972-02-08 1973-11-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4883787A (en) * 1972-02-08 1973-11-08

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58192357A (en) * 1982-05-07 1983-11-09 Hitachi Ltd Semiconductor device
JPH0423424B2 (en) * 1982-05-07 1992-04-22 Hitachi Ltd
JPS5989796A (en) * 1982-11-12 1984-05-24 Hitachi Condenser Co Ltd Manufacture of aluminum foil for electrolytic capacitor
JPH0243717A (en) * 1988-08-03 1990-02-14 Shinei Tsushin Kogyo Kk Manufacture of electrode foil for aluminum electrolytic capacitor
US5594279A (en) * 1992-11-12 1997-01-14 Texas Instruments Incorporated Semiconductor device having shield wiring for noise suppression
JPH08236709A (en) * 1996-02-09 1996-09-13 Nippondenso Co Ltd Semiconductor device

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