JPS5626463A - Semiconductor integrated circuit capacity - Google Patents

Semiconductor integrated circuit capacity

Info

Publication number
JPS5626463A
JPS5626463A JP10243979A JP10243979A JPS5626463A JP S5626463 A JPS5626463 A JP S5626463A JP 10243979 A JP10243979 A JP 10243979A JP 10243979 A JP10243979 A JP 10243979A JP S5626463 A JPS5626463 A JP S5626463A
Authority
JP
Japan
Prior art keywords
region
type
emitter
layer
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10243979A
Other languages
Japanese (ja)
Inventor
Kazuyuki Yamaguchi
Shiro Mizutani
Tatsumi Sumi
Onori Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP10243979A priority Critical patent/JPS5626463A/en
Publication of JPS5626463A publication Critical patent/JPS5626463A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only

Abstract

PURPOSE:To obtain a capacity good suited for high-frequency IC by reducing influence of series resistance, by forming a base region on a semiconductor layer and by finely dividing an emitter region when it is provided in the base region. CONSTITUTION:An N<+> type embedded region 3 is dispersingly formed on a P type Si substrate 1, an N type layer 4 is allowed to grow epitaxially on an entire surface, and the layer 4 is formed in an islandlike shape by a P<+> type insulated and separated region 2. And then, in thus formed layer, a P type base region 5 is dispersingly formed and provided with an N<+> type emitter region, at this time, the emitter region is finely divided to form plural emitter regions, such as those numbered 14 and 15. And then, an entire surface is covered with an SiO2 film 7 and provided with holes, and electrodes 17, 16 and 18 are attached to the region 5 in such a manner as to be located between and outside the regions 14 and 15, and the electrodes are connected to a common terminal 11. It is possible, by doing so, to reduce an emitter series resistance and also to improve effect of a capacitor consisting of an emitter and a base.
JP10243979A 1979-08-10 1979-08-10 Semiconductor integrated circuit capacity Pending JPS5626463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10243979A JPS5626463A (en) 1979-08-10 1979-08-10 Semiconductor integrated circuit capacity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10243979A JPS5626463A (en) 1979-08-10 1979-08-10 Semiconductor integrated circuit capacity

Publications (1)

Publication Number Publication Date
JPS5626463A true JPS5626463A (en) 1981-03-14

Family

ID=14327491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10243979A Pending JPS5626463A (en) 1979-08-10 1979-08-10 Semiconductor integrated circuit capacity

Country Status (1)

Country Link
JP (1) JPS5626463A (en)

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