JPS57184251A - Semiconductor element with control electrode - Google Patents

Semiconductor element with control electrode

Info

Publication number
JPS57184251A
JPS57184251A JP6823582A JP6823582A JPS57184251A JP S57184251 A JPS57184251 A JP S57184251A JP 6823582 A JP6823582 A JP 6823582A JP 6823582 A JP6823582 A JP 6823582A JP S57184251 A JPS57184251 A JP S57184251A
Authority
JP
Japan
Prior art keywords
control electrode
type layer
controlled
voltage
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6823582A
Other languages
Japanese (ja)
Inventor
Yutaka Hayashi
Toshihiro Sekikawa
Yasuo Tarui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP6823582A priority Critical patent/JPS57184251A/en
Publication of JPS57184251A publication Critical patent/JPS57184251A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To form the semiconductor element, breakdown voltage, etc. thereof are controlled, by forming the second and third mutually separated regions, which shape a rectifying junction while being contacted with the first semiconductor region, and forming the control electrode onto the first semiconductor region through an insulating film. CONSTITUTION:The N<+> type layer 3 and the P<+> type layer 2 are formed to the P type Si substrate 1, the control electrode 5 is shaped through the insulating film 4, and the oscillation frequency, negative resistance value, avalanche breakdown voltage, Zener voltage, punch-through voltage, etc. in the P-N junction formed by the substrate 1 and the N<+> type layer 3 are controlled. Accordingly, a high-frequency amplifying element, characteristics thereof are easily controlled, can be formed as a multi-terminal element.
JP6823582A 1982-04-23 1982-04-23 Semiconductor element with control electrode Pending JPS57184251A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6823582A JPS57184251A (en) 1982-04-23 1982-04-23 Semiconductor element with control electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6823582A JPS57184251A (en) 1982-04-23 1982-04-23 Semiconductor element with control electrode

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP18258080A Division JPS56124275A (en) 1980-12-23 1980-12-23 Semiconductor element with control electrode

Publications (1)

Publication Number Publication Date
JPS57184251A true JPS57184251A (en) 1982-11-12

Family

ID=13367918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6823582A Pending JPS57184251A (en) 1982-04-23 1982-04-23 Semiconductor element with control electrode

Country Status (1)

Country Link
JP (1) JPS57184251A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5616944A (en) * 1990-05-21 1997-04-01 Canon Kabushiki Kaisha Diode and semiconductor device having a controlled intrinsic or low impurity concentration region between opposite conductivity type semiconductor regions

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS557952A (en) * 1978-07-04 1980-01-21 Toyota Motor Corp Plasma ignition system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS557952A (en) * 1978-07-04 1980-01-21 Toyota Motor Corp Plasma ignition system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5616944A (en) * 1990-05-21 1997-04-01 Canon Kabushiki Kaisha Diode and semiconductor device having a controlled intrinsic or low impurity concentration region between opposite conductivity type semiconductor regions
EP0458570B1 (en) * 1990-05-21 1997-10-08 Canon Kabushiki Kaisha Diode and semiconductor device having such a diode

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