JPS5617053A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5617053A
JPS5617053A JP9257679A JP9257679A JPS5617053A JP S5617053 A JPS5617053 A JP S5617053A JP 9257679 A JP9257679 A JP 9257679A JP 9257679 A JP9257679 A JP 9257679A JP S5617053 A JPS5617053 A JP S5617053A
Authority
JP
Japan
Prior art keywords
region
type
layer
stabilizing resistor
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9257679A
Other languages
Japanese (ja)
Inventor
Takashi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9257679A priority Critical patent/JPS5617053A/en
Publication of JPS5617053A publication Critical patent/JPS5617053A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the breakdown withstand voltage of the semiconductor device by varying the resistance of a stabilizing resistor connected in series with a terminal in a bipolar type transistor depending upon the voltage applied externally when forming the stabilizing resistor and further selecting the coefficient positive. CONSTITUTION:An N-type layer 2 is epitaxially grown as a collector on an N<+>-type Si substrate 1, a P-type base region 3 is diffused in a part thereof, and an N-type emitter region 4 is formed therein. Then, a P-type region 5 is diffused in the layer 2 adjacent thereto to form an N<+>-type region 6 therein, and the region 5 disposed between the regions 4 and 6 is used as a series stabilizing resistor for the emitter region 4. Thereafter, an insulating film 8 is coated on the entire surface, a predetermined opening is perforated thereat, a base electrode 10 is connected to the divided base region 7 formed at a part of the region 3, and an emitter electrode 14 is connected through a metallized layer 13 to the region 4, and the region 6 is connected through the layer 15 to a supply power source.
JP9257679A 1979-07-23 1979-07-23 Semiconductor device Pending JPS5617053A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9257679A JPS5617053A (en) 1979-07-23 1979-07-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9257679A JPS5617053A (en) 1979-07-23 1979-07-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5617053A true JPS5617053A (en) 1981-02-18

Family

ID=14058250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9257679A Pending JPS5617053A (en) 1979-07-23 1979-07-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5617053A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043334A (en) * 1983-08-20 1985-03-07 Maruichi:Kk Preparation of raw material for dried small sardines and flakes of dried bonito

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043334A (en) * 1983-08-20 1985-03-07 Maruichi:Kk Preparation of raw material for dried small sardines and flakes of dried bonito

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