JPS5617064A - Transistor - Google Patents
TransistorInfo
- Publication number
- JPS5617064A JPS5617064A JP9359279A JP9359279A JPS5617064A JP S5617064 A JPS5617064 A JP S5617064A JP 9359279 A JP9359279 A JP 9359279A JP 9359279 A JP9359279 A JP 9359279A JP S5617064 A JPS5617064 A JP S5617064A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- type
- collector
- impurity density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 abstract 3
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 230000003321 amplification Effects 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To enhance the injection efficiency of the transistor in reverse operation by forming a collector region of an upper low impurity density layer and a lower low impurity density layer and forming high impurity density regions for surrounding the base region at an interval in the upper layer when forming the base region in the upper layer. CONSTITUTION:A semiconductor substrate 3 becoming a collector region is formed of upper N<->-type epitaxial layer 2 and a lower N<+>-type layer 1, a P-type base region 4 is diffused in the upper epitaxial layer 2, an N-type emitter region 5 is formed therein to form the planar type transistor. In this configuration, an N<+>-type region 10 is diffused newly to the layer 2 at an interval while surrounding the region 4, and an insulating film 6 is coated on the entire surface. Thereafter, openings are perforated at the film 6, base, emitter and collector electrodes 8, 9, 11 are mounted therethrough, and the electrode 11 is connected and shorted to the collector electrode 7 formed on the back surface of the layer 1. In this manner, the surface injection efficiency can be improved to increase the current amplification factor thereof.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9359279A JPS5617064A (en) | 1979-07-20 | 1979-07-20 | Transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9359279A JPS5617064A (en) | 1979-07-20 | 1979-07-20 | Transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5617064A true JPS5617064A (en) | 1981-02-18 |
Family
ID=14086563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9359279A Pending JPS5617064A (en) | 1979-07-20 | 1979-07-20 | Transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5617064A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60259163A (en) * | 1984-06-07 | 1985-12-21 | Kanegi Shoten Kk | Preparation of food using processing residue of frozen tuna |
-
1979
- 1979-07-20 JP JP9359279A patent/JPS5617064A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60259163A (en) * | 1984-06-07 | 1985-12-21 | Kanegi Shoten Kk | Preparation of food using processing residue of frozen tuna |
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