JPS564276A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS564276A JPS564276A JP8000779A JP8000779A JPS564276A JP S564276 A JPS564276 A JP S564276A JP 8000779 A JP8000779 A JP 8000779A JP 8000779 A JP8000779 A JP 8000779A JP S564276 A JPS564276 A JP S564276A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- substrate
- region
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 8
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To enable bi-directional operation even in an epitaxial base type semiconductor device by interposing a layer having the same conducting type as the substrate and a high impurity density between a semiconductor substrate used as a collector and a reverse conducting layer epitaxially grown to become a base on the substrate when epitaxially growing the reverse conducting type layer becoming the base on the substrate. CONSTITUTION:When epitaxially growing a P-type layer 2 becoming base region on an N-type semiconductor substrate 1 used as a collector region, it is not directly grown but an N<+>-type diffused layer 11 is interposed therebetween. In order to then increase the P-N junction surface formed between the layer 11 and the substrate 1, grooves 6 are so perforated as to enter into the substrate 1 to surround the layer 2, and an N<+>-type diffused region 5 is formed from the side surface to the bottom surface. Thereafter, an N<+>-type emitter region 4 is diffused in the layer 2 surrounded by the region 5, a P<+>-type contact region 3 is diffused adjacent to the region 4, elecrodes 9 and 10 are mounted thereon, and an electrode 8 is coated on the back surface of the substrate 1. In this manner, carrier can be sufficiently implanted to the collector even in reverse operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8000779A JPS564276A (en) | 1979-06-25 | 1979-06-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8000779A JPS564276A (en) | 1979-06-25 | 1979-06-25 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS564276A true JPS564276A (en) | 1981-01-17 |
Family
ID=13706264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8000779A Pending JPS564276A (en) | 1979-06-25 | 1979-06-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS564276A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6178000U (en) * | 1984-10-25 | 1986-05-24 |
-
1979
- 1979-06-25 JP JP8000779A patent/JPS564276A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6178000U (en) * | 1984-10-25 | 1986-05-24 | ||
| JPS6332720Y2 (en) * | 1984-10-25 | 1988-08-31 |
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