JPS56112761A - Manufacture of 3-5 group element semiconductor device - Google Patents

Manufacture of 3-5 group element semiconductor device

Info

Publication number
JPS56112761A
JPS56112761A JP1513580A JP1513580A JPS56112761A JP S56112761 A JPS56112761 A JP S56112761A JP 1513580 A JP1513580 A JP 1513580A JP 1513580 A JP1513580 A JP 1513580A JP S56112761 A JPS56112761 A JP S56112761A
Authority
JP
Japan
Prior art keywords
layer
type
impurity
semiconductor device
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1513580A
Other languages
Japanese (ja)
Other versions
JPH029465B2 (en
Inventor
Junichi Nishizawa
Kaoru Mototani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP1513580A priority Critical patent/JPS56112761A/en
Publication of JPS56112761A publication Critical patent/JPS56112761A/en
Publication of JPH029465B2 publication Critical patent/JPH029465B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To enable to form a thin p-n junction in the semiconductor device by epitaxially growing in liquid phase the second conductivity type low resistance semiconductor region containing the first conductivity type impurity on the first conductivity type high resistance semiconductor region and diffusing the impurity in a lower layer. CONSTITUTION:When a semiconductor having one extremely thin region of two low resistance regions forming the p-n junction is formed, a TUNNETT diode has an n<+> type substrate 3, an n<+> type layer 4, an i(nu) layer 5, an n<+> type layer 6, a p<+> type layer 7, and a p<++> type layer 8. Doner impurity is contained in the layer 7, epitaxially grown on the i(nu) layer 5, thereby diffusing the impurity in the layer 5 during growing and thus forming a thin n<+> type layer 6, and forming a p<+>-n<+> junction. The semiconductor device used here may not be limited only to the TUNNETT diode.
JP1513580A 1980-02-08 1980-02-08 Manufacture of 3-5 group element semiconductor device Granted JPS56112761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1513580A JPS56112761A (en) 1980-02-08 1980-02-08 Manufacture of 3-5 group element semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1513580A JPS56112761A (en) 1980-02-08 1980-02-08 Manufacture of 3-5 group element semiconductor device

Publications (2)

Publication Number Publication Date
JPS56112761A true JPS56112761A (en) 1981-09-05
JPH029465B2 JPH029465B2 (en) 1990-03-02

Family

ID=11880370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1513580A Granted JPS56112761A (en) 1980-02-08 1980-02-08 Manufacture of 3-5 group element semiconductor device

Country Status (1)

Country Link
JP (1) JPS56112761A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074480A (en) * 1983-09-10 1985-04-26 Semiconductor Res Found Manufacture of iii-v semiconductor device
JPS61289707A (en) * 1985-06-18 1986-12-19 Semiconductor Res Found Ultrahigh frequency negative resistance semiconductor oscillator
JPH01167059U (en) * 1989-05-18 1989-11-22

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06214570A (en) * 1993-01-14 1994-08-05 Yamaha Corp Keyboard structure of electronic musical instrument

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074480A (en) * 1983-09-10 1985-04-26 Semiconductor Res Found Manufacture of iii-v semiconductor device
JPS61289707A (en) * 1985-06-18 1986-12-19 Semiconductor Res Found Ultrahigh frequency negative resistance semiconductor oscillator
JPH01167059U (en) * 1989-05-18 1989-11-22

Also Published As

Publication number Publication date
JPH029465B2 (en) 1990-03-02

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