JPS5681984A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5681984A JPS5681984A JP16019579A JP16019579A JPS5681984A JP S5681984 A JPS5681984 A JP S5681984A JP 16019579 A JP16019579 A JP 16019579A JP 16019579 A JP16019579 A JP 16019579A JP S5681984 A JPS5681984 A JP S5681984A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- substrate
- conductivity type
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052794 bromium Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain an avalanche type element having high breakdown voltage at the periphery of the P-N junction by forming a semiconductor layer having the same conductivity type as the one conductivity type semiconductor substrate thereon with less energy gap, enclosing it with the layer having the same conductivity type as the substrate, and forming a reverse conductivity type layer thereon. CONSTITUTION:An N type InGaAsP layer 42 and an N type InP layer 43 having the same impurity density as the layer 42 are laminated by vapor or liquid phase epitaxial growing process on an N type InP substrate 41. Subsequently, a mask of an insulating film 50 formed on SiO2 or Si3N4 is formed thereon, is etched with methanol solution containing 5% bromine, and is removed so that the part having no film 50 is intruded into the substrate 41. Thereafter, the film 50 is removed, an N type InP layer 43 surrounding the layers 43 and 42 retained is formed again by epitaxial growth, the layers 43 are integrated, high impurity P type InP layer 44 is diffused in the layer 43 on the layer 42, and is formed in mesa shape later.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16019579A JPS5681984A (en) | 1979-12-06 | 1979-12-06 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16019579A JPS5681984A (en) | 1979-12-06 | 1979-12-06 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5681984A true JPS5681984A (en) | 1981-07-04 |
| JPS6222475B2 JPS6222475B2 (en) | 1987-05-18 |
Family
ID=15709862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16019579A Granted JPS5681984A (en) | 1979-12-06 | 1979-12-06 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5681984A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60254675A (en) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Manufacture of semiconductor photo receptor |
| JP2006295216A (en) * | 1995-02-02 | 2006-10-26 | Sumitomo Electric Ind Ltd | Pin type light-receiving device, and method of manufacturing same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5671985A (en) * | 1979-11-19 | 1981-06-15 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light receiving system |
-
1979
- 1979-12-06 JP JP16019579A patent/JPS5681984A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5671985A (en) * | 1979-11-19 | 1981-06-15 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light receiving system |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60254675A (en) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Manufacture of semiconductor photo receptor |
| JP2006295216A (en) * | 1995-02-02 | 2006-10-26 | Sumitomo Electric Ind Ltd | Pin type light-receiving device, and method of manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6222475B2 (en) | 1987-05-18 |
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