JPS5671985A - Semiconductor light receiving system - Google Patents

Semiconductor light receiving system

Info

Publication number
JPS5671985A
JPS5671985A JP14982179A JP14982179A JPS5671985A JP S5671985 A JPS5671985 A JP S5671985A JP 14982179 A JP14982179 A JP 14982179A JP 14982179 A JP14982179 A JP 14982179A JP S5671985 A JPS5671985 A JP S5671985A
Authority
JP
Japan
Prior art keywords
layer
light receiving
mask
applying
receiving system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14982179A
Other languages
Japanese (ja)
Inventor
Haruo Nagai
Susumu Hata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14982179A priority Critical patent/JPS5671985A/en
Publication of JPS5671985A publication Critical patent/JPS5671985A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier

Abstract

PURPOSE:To prevent a carrier recombination and leakage and to obtain a high quantum efficiency by a method wherein a salient part is installed on an N<+> type substrate surface and an N layer is laid thereupon, then, the whole surface is coated and the N layer is installed and a P layer is selectively installed striding over the salient part. CONSTITUTION:An N epitaxial layer is laid upon an N<+> type substrate and applying a mask 71, it is etched to form N layers 26, 28. Next thereto, an N layer 29 is formed in an epitaxial growth, thus completing a basic body 31. The mask 71 is removed and applying an SiO2 mask 37, a P layer 40 is formed and electrodes 38, 39 are formed. Lattice constants of an N layer 30 including layers 28, 29, the N layer 26 and the N<+> substrate are made approximately equal and a forbidden band gap of the N layer 26 is made narrower than those of others, thus, the N layer is made substantially a photosensitive layer. On this account, on the light receiving surface 27, recombination of carrier or a leak current are hardly generated. In this way, in comparison with the existing system, a light receiving system having a sharply higher quantum efficiency is obtained.
JP14982179A 1979-11-19 1979-11-19 Semiconductor light receiving system Pending JPS5671985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14982179A JPS5671985A (en) 1979-11-19 1979-11-19 Semiconductor light receiving system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14982179A JPS5671985A (en) 1979-11-19 1979-11-19 Semiconductor light receiving system

Publications (1)

Publication Number Publication Date
JPS5671985A true JPS5671985A (en) 1981-06-15

Family

ID=15483427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14982179A Pending JPS5671985A (en) 1979-11-19 1979-11-19 Semiconductor light receiving system

Country Status (1)

Country Link
JP (1) JPS5671985A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681984A (en) * 1979-12-06 1981-07-04 Mitsubishi Electric Corp Semiconductor device
EP0163546A2 (en) * 1984-05-31 1985-12-04 Fujitsu Limited Process for fabricating an avalanche photodiode and an avalanche photodiode thus-obtained

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681984A (en) * 1979-12-06 1981-07-04 Mitsubishi Electric Corp Semiconductor device
JPS6222475B2 (en) * 1979-12-06 1987-05-18 Mitsubishi Electric Corp
EP0163546A2 (en) * 1984-05-31 1985-12-04 Fujitsu Limited Process for fabricating an avalanche photodiode and an avalanche photodiode thus-obtained
US4840916A (en) * 1984-05-31 1989-06-20 Fujitsu Limited Process for fabricating an avalanche photodiode

Similar Documents

Publication Publication Date Title
JPS5550664A (en) Semiconductor device and method of fabricating the same
JPS5671985A (en) Semiconductor light receiving system
JPS54152878A (en) Structure of semiconductor laser element and its manufacture
JPS55140285A (en) Semiconductor laser
JPS5624937A (en) Manufacture of semiconductor device
JPS5661169A (en) Preparation of compound semiconductor device
JPS56107588A (en) Semiconductor light emitting element
JPS57134960A (en) Semiconductor device
JPS5513991A (en) Method of manufacturing semiconductor laser
JPS55125692A (en) Semiconductor laser
JPS5654086A (en) Manufacture of semiconductor laser apparatus
JPS5596694A (en) Semiconductor laser device and method of fabricating the same
JPS5742176A (en) Optical semiconductor element
JPS54115087A (en) Double hetero junction laser of stripe type
JPS57162482A (en) Semiconductor luminous device and manufacture thereof
JPS5558533A (en) Manufacture of semiconductor device
JPS5379473A (en) Manufacture of semiconductor device
JPS57198681A (en) Optical semiconductor
JPS5723219A (en) Manufacture of semiconductor device
JPS5693381A (en) Light emission diode
JPS5773983A (en) Semiconductor photodetector
JPS5724587A (en) Light-emitting device
JPS57111073A (en) Semiconductor light-receiving element
JPS5646570A (en) Avalanche photodiode
JPS5681984A (en) Semiconductor device