JPS5646570A - Avalanche photodiode - Google Patents

Avalanche photodiode

Info

Publication number
JPS5646570A
JPS5646570A JP12353079A JP12353079A JPS5646570A JP S5646570 A JPS5646570 A JP S5646570A JP 12353079 A JP12353079 A JP 12353079A JP 12353079 A JP12353079 A JP 12353079A JP S5646570 A JPS5646570 A JP S5646570A
Authority
JP
Japan
Prior art keywords
layer
type
region
guard ring
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12353079A
Other languages
Japanese (ja)
Other versions
JPS6138871B2 (en
Inventor
Kazuo Sakai
Yuichi Matsushima
Shigeyuki Akiba
Akiya Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP12353079A priority Critical patent/JPS5646570A/en
Priority to US06/187,744 priority patent/US4383266A/en
Priority to GB8031240A priority patent/GB2060257B/en
Publication of JPS5646570A publication Critical patent/JPS5646570A/en
Publication of JPS6138871B2 publication Critical patent/JPS6138871B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To exactly secure a breakdown preventive effect of an avalanche photodiode having a hetero junction by projecting the end of a guard ring into a semiconductor having larger forbidden band width than the semiconductor in the photodetecting region when forming the guard ring at the photodiode. CONSTITUTION:An N type In1-pGapAsqP1-q layer 18, where 0.42q<=P<=0.50q and 0<=q<=1, and N type In1-xGaxAsyP1-y layer 19, where 0.42y<=x<=0.50y and 0<= y<=1, are laminated on an N<+> type InP substrate 17, and is epitaxially grown in liqid phase. At this time the forbidden band width of the layer 18 is selected to be larger than that of the layer 19. Subsequently, the entire surface is covered with an SiO2 film 5, a hole is opened corresponding to the region forming a guard ring, Zn is diffused therein, and P type guard rings 21, 22 are formed. Thereafter, the film 5 surrounded therewith is removed, Zn is again diffused in the surface layer of the layer 19 thus exposed, and a photodetecting region 20 is formed. In this configuration the portion having large radius of curvature at the ends of the rings 21, 22 is intruded into the layer 18, and the P-N junction of the region 20 is disposed in the layer 19.
JP12353079A 1979-09-26 1979-09-26 Avalanche photodiode Granted JPS5646570A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP12353079A JPS5646570A (en) 1979-09-26 1979-09-26 Avalanche photodiode
US06/187,744 US4383266A (en) 1979-09-26 1980-09-16 Avalanche photo diode
GB8031240A GB2060257B (en) 1979-09-26 1980-09-26 Guard rings for avalanche photo diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12353079A JPS5646570A (en) 1979-09-26 1979-09-26 Avalanche photodiode

Publications (2)

Publication Number Publication Date
JPS5646570A true JPS5646570A (en) 1981-04-27
JPS6138871B2 JPS6138871B2 (en) 1986-09-01

Family

ID=14862884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12353079A Granted JPS5646570A (en) 1979-09-26 1979-09-26 Avalanche photodiode

Country Status (1)

Country Link
JP (1) JPS5646570A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190370A (en) * 1981-05-18 1982-11-22 Fujitsu Ltd Semiconductor light receiving element
US5098851A (en) * 1989-02-10 1992-03-24 Hitachi, Ltd. Fabricating a semiconductor photodetector by annealing to smooth the PN junction

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190370A (en) * 1981-05-18 1982-11-22 Fujitsu Ltd Semiconductor light receiving element
JPS6259475B2 (en) * 1981-05-18 1987-12-11 Fujitsu Ltd
US5098851A (en) * 1989-02-10 1992-03-24 Hitachi, Ltd. Fabricating a semiconductor photodetector by annealing to smooth the PN junction

Also Published As

Publication number Publication date
JPS6138871B2 (en) 1986-09-01

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