JPS5513990A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5513990A
JPS5513990A JP8785078A JP8785078A JPS5513990A JP S5513990 A JPS5513990 A JP S5513990A JP 8785078 A JP8785078 A JP 8785078A JP 8785078 A JP8785078 A JP 8785078A JP S5513990 A JPS5513990 A JP S5513990A
Authority
JP
Japan
Prior art keywords
layer
junction
mesaform
type
reverse bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8785078A
Other languages
Japanese (ja)
Other versions
JPS6244433B2 (en
Inventor
Kenshin Taguchi
Yoshinari Matsumoto
Katsuhiko Nishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8785078A priority Critical patent/JPS5513990A/en
Publication of JPS5513990A publication Critical patent/JPS5513990A/en
Publication of JPS6244433B2 publication Critical patent/JPS6244433B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To improve the breakdown characteristic by forming the pn-junction serving as the gardring against the reverse bias operated abalanche photo diode.
CONSTITUTION: On a n+-type substrate 11 formed is a n+-type layer 12, on which a n+-type layer 13 having a mesaform layer 13' is formed. Further on the layer 13 formed is a n-type layer 14, in which a p-type layer 16 is formed to provide a pnjunction plane 17. Since a depletion layer is spread into the mesaform layer 13' by applying the reverse bias on the junction plane 17, the breakdown voltage at the circumference of the pn-junction where the forbidden band width of the layer 14 burying the mesaform layer 13' is larger than that of the layer 13' becomes higher than the breakedown voltage at the pn-junction above the mesaform layer 13'. Furthermore, since the impurities concentration in the layer 14 is lower than that in the layer 13, the internal maximum electric field is formed at the pn-junction 17 above the layer 13' rather than at the circumference of the pn-junction 17 upon applying the constant reverse bias and the uniform breakdown will be caused in the former. Thus, the breakdown characteristic can be improved through the gardring structure.
COPYRIGHT: (C)1980,JPO&Japio
JP8785078A 1978-07-18 1978-07-18 Semiconductor device Granted JPS5513990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8785078A JPS5513990A (en) 1978-07-18 1978-07-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8785078A JPS5513990A (en) 1978-07-18 1978-07-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5513990A true JPS5513990A (en) 1980-01-31
JPS6244433B2 JPS6244433B2 (en) 1987-09-21

Family

ID=13926353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8785078A Granted JPS5513990A (en) 1978-07-18 1978-07-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5513990A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5722363U (en) * 1980-07-11 1982-02-05
JPS5773983A (en) * 1980-10-27 1982-05-08 Nec Corp Semiconductor photodetector
JPS57198668A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Light receiving element
JPS60102774A (en) * 1983-11-09 1985-06-06 Kokusai Denshin Denwa Co Ltd <Kdd> Manufacture of semiconductor element

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5722363U (en) * 1980-07-11 1982-02-05
JPS5773983A (en) * 1980-10-27 1982-05-08 Nec Corp Semiconductor photodetector
JPH0258792B2 (en) * 1980-10-27 1990-12-10 Nippon Electric Co
JPS57198668A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Light receiving element
JPH0231509B2 (en) * 1981-06-01 1990-07-13 Fujitsu Ltd
JPS60102774A (en) * 1983-11-09 1985-06-06 Kokusai Denshin Denwa Co Ltd <Kdd> Manufacture of semiconductor element
JPH051631B2 (en) * 1983-11-09 1993-01-08 Kokusai Denshin Denwa Co Ltd

Also Published As

Publication number Publication date
JPS6244433B2 (en) 1987-09-21

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