JPS57198668A - Light receiving element - Google Patents

Light receiving element

Info

Publication number
JPS57198668A
JPS57198668A JP56084000A JP8400081A JPS57198668A JP S57198668 A JPS57198668 A JP S57198668A JP 56084000 A JP56084000 A JP 56084000A JP 8400081 A JP8400081 A JP 8400081A JP S57198668 A JPS57198668 A JP S57198668A
Authority
JP
Japan
Prior art keywords
layer
light receiving
semiconductor layer
element semiconductor
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56084000A
Other languages
Japanese (ja)
Other versions
JPH0231509B2 (en
Inventor
Yasuo Baba
Haruo Kawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56084000A priority Critical patent/JPS57198668A/en
Publication of JPS57198668A publication Critical patent/JPS57198668A/en
Publication of JPH0231509B2 publication Critical patent/JPH0231509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Radiation Pyrometers (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To display ring effect efficiently and to decrease a noise level, in the light receiving element wherein a light receiving part and a guard ring are provided on the surface of a III-V group two element semiconductor layer, by providing a III-V multiple element semiconductor layer which has narrower forbidden band width than that of said two element semiconductor layer and higher carrier concentration in said two element semiconductor layer. CONSTITUTION:On an N<+> type InP substrate 4, an N type InP buffer layer 3 and an N type InGaAsP light absorbing layer 2 which is the III-V group multiple element semiconductor layer are layered and epitaxially grown in a liquid phase. The device is once taken out of a growing furnace. The layer 2 with a diameter of about 100mum which is to become the light receiving part is left, and the other part is etched away. Then the device is put in the growing furnace again. On the entire surface of the layer 2 including the remaining layer 2, the III-V group two element semiconductor layer 1 which is to become a window layer is grown. P type impurities are doped therein, and the P type light receiving part 5 and the guard ring part 6 which encircles the part 5 in a ring shape are formed. When a high reverse voltage is applied in this constitution, breakdown preferentially occurs at the junction between the light receiving part 5 and the window layer 1.
JP56084000A 1981-06-01 1981-06-01 Light receiving element Granted JPS57198668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56084000A JPS57198668A (en) 1981-06-01 1981-06-01 Light receiving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56084000A JPS57198668A (en) 1981-06-01 1981-06-01 Light receiving element

Publications (2)

Publication Number Publication Date
JPS57198668A true JPS57198668A (en) 1982-12-06
JPH0231509B2 JPH0231509B2 (en) 1990-07-13

Family

ID=13818254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56084000A Granted JPS57198668A (en) 1981-06-01 1981-06-01 Light receiving element

Country Status (1)

Country Link
JP (1) JPS57198668A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6285832A (en) * 1985-10-11 1987-04-20 Mitsubishi Cable Ind Ltd Optical type thermometer
US4835575A (en) * 1987-02-06 1989-05-30 Siemens Aktiengesellschaft Monolithically integrated waveguide-photodiode combination

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140587A (en) * 1975-05-16 1976-12-03 Thomson Csf Avalanche photodiode
JPS5513990A (en) * 1978-07-18 1980-01-31 Nec Corp Semiconductor device
JPS5572084A (en) * 1978-11-27 1980-05-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo-detector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140587A (en) * 1975-05-16 1976-12-03 Thomson Csf Avalanche photodiode
JPS5513990A (en) * 1978-07-18 1980-01-31 Nec Corp Semiconductor device
JPS5572084A (en) * 1978-11-27 1980-05-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo-detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6285832A (en) * 1985-10-11 1987-04-20 Mitsubishi Cable Ind Ltd Optical type thermometer
US4835575A (en) * 1987-02-06 1989-05-30 Siemens Aktiengesellschaft Monolithically integrated waveguide-photodiode combination

Also Published As

Publication number Publication date
JPH0231509B2 (en) 1990-07-13

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