JPS55125684A - Semiconductor photodetector element - Google Patents

Semiconductor photodetector element

Info

Publication number
JPS55125684A
JPS55125684A JP3219779A JP3219779A JPS55125684A JP S55125684 A JPS55125684 A JP S55125684A JP 3219779 A JP3219779 A JP 3219779A JP 3219779 A JP3219779 A JP 3219779A JP S55125684 A JPS55125684 A JP S55125684A
Authority
JP
Japan
Prior art keywords
layer
band width
forbidden band
type
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3219779A
Other languages
Japanese (ja)
Other versions
JPS6133266B2 (en
Inventor
Kitsutaro Amano
Akio Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP3219779A priority Critical patent/JPS55125684A/en
Publication of JPS55125684A publication Critical patent/JPS55125684A/en
Publication of JPS6133266B2 publication Critical patent/JPS6133266B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To provide the high gain amplifying function of a semiconductor photodetector by forming the forbidden band width of emitter material forming a photodetector wider than or equal to the forbidden band width of base material and reducing the forbidden band width of collector material to narrower than the forbidden band width of base material.
CONSTITUTION: An n--type collector layer 18, a p+-type AlxGa1-xAs base layer 19, an n+-type AlYGa1-YAs emitter layer 30 are sequentially laminated and epitaxially grown on an n+-type GaAs substrate 17, and formed in mesa state at the peripheral edge thereof to prevent the edge breakdown of the junction produced between the layers 19 and 18. Then, an ohmic electrode 21 is mounted on the layer 20, and an electrode 22 is coated on the back surface of the substrate 17. In this configuration, the relationship between x and y is y≥x, and the forbidden band width of the layer 20 is formed wider than that of the layer 19 and equal to that, and the forbidden band width of the layer 18 is formed narrower than that of the layer 19. Thus, reverse bias voltage is applied between the layers 18 and 19, and when light 4 is incident to the layer 20, avalanche effect and transistor function are produced thereon.
COPYRIGHT: (C)1980,JPO&Japio
JP3219779A 1979-03-22 1979-03-22 Semiconductor photodetector element Granted JPS55125684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3219779A JPS55125684A (en) 1979-03-22 1979-03-22 Semiconductor photodetector element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3219779A JPS55125684A (en) 1979-03-22 1979-03-22 Semiconductor photodetector element

Publications (2)

Publication Number Publication Date
JPS55125684A true JPS55125684A (en) 1980-09-27
JPS6133266B2 JPS6133266B2 (en) 1986-08-01

Family

ID=12352172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3219779A Granted JPS55125684A (en) 1979-03-22 1979-03-22 Semiconductor photodetector element

Country Status (1)

Country Link
JP (1) JPS55125684A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780781A (en) * 1980-11-08 1982-05-20 Mitsubishi Electric Corp Phototransistor
JP2005285921A (en) * 2004-03-29 2005-10-13 Mitsubishi Electric Corp Avalanche photodiode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780781A (en) * 1980-11-08 1982-05-20 Mitsubishi Electric Corp Phototransistor
JP2005285921A (en) * 2004-03-29 2005-10-13 Mitsubishi Electric Corp Avalanche photodiode

Also Published As

Publication number Publication date
JPS6133266B2 (en) 1986-08-01

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