JPS55125684A - Semiconductor photodetector element - Google Patents
Semiconductor photodetector elementInfo
- Publication number
- JPS55125684A JPS55125684A JP3219779A JP3219779A JPS55125684A JP S55125684 A JPS55125684 A JP S55125684A JP 3219779 A JP3219779 A JP 3219779A JP 3219779 A JP3219779 A JP 3219779A JP S55125684 A JPS55125684 A JP S55125684A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- band width
- forbidden band
- type
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To provide the high gain amplifying function of a semiconductor photodetector by forming the forbidden band width of emitter material forming a photodetector wider than or equal to the forbidden band width of base material and reducing the forbidden band width of collector material to narrower than the forbidden band width of base material.
CONSTITUTION: An n--type collector layer 18, a p+-type AlxGa1-xAs base layer 19, an n+-type AlYGa1-YAs emitter layer 30 are sequentially laminated and epitaxially grown on an n+-type GaAs substrate 17, and formed in mesa state at the peripheral edge thereof to prevent the edge breakdown of the junction produced between the layers 19 and 18. Then, an ohmic electrode 21 is mounted on the layer 20, and an electrode 22 is coated on the back surface of the substrate 17. In this configuration, the relationship between x and y is y≥x, and the forbidden band width of the layer 20 is formed wider than that of the layer 19 and equal to that, and the forbidden band width of the layer 18 is formed narrower than that of the layer 19. Thus, reverse bias voltage is applied between the layers 18 and 19, and when light 4 is incident to the layer 20, avalanche effect and transistor function are produced thereon.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3219779A JPS55125684A (en) | 1979-03-22 | 1979-03-22 | Semiconductor photodetector element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3219779A JPS55125684A (en) | 1979-03-22 | 1979-03-22 | Semiconductor photodetector element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55125684A true JPS55125684A (en) | 1980-09-27 |
JPS6133266B2 JPS6133266B2 (en) | 1986-08-01 |
Family
ID=12352172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3219779A Granted JPS55125684A (en) | 1979-03-22 | 1979-03-22 | Semiconductor photodetector element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55125684A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5780781A (en) * | 1980-11-08 | 1982-05-20 | Mitsubishi Electric Corp | Phototransistor |
JP2005285921A (en) * | 2004-03-29 | 2005-10-13 | Mitsubishi Electric Corp | Avalanche photodiode |
-
1979
- 1979-03-22 JP JP3219779A patent/JPS55125684A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5780781A (en) * | 1980-11-08 | 1982-05-20 | Mitsubishi Electric Corp | Phototransistor |
JP2005285921A (en) * | 2004-03-29 | 2005-10-13 | Mitsubishi Electric Corp | Avalanche photodiode |
Also Published As
Publication number | Publication date |
---|---|
JPS6133266B2 (en) | 1986-08-01 |
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