JPS56111276A - Luminous semiconductor device - Google Patents

Luminous semiconductor device

Info

Publication number
JPS56111276A
JPS56111276A JP1450580A JP1450580A JPS56111276A JP S56111276 A JPS56111276 A JP S56111276A JP 1450580 A JP1450580 A JP 1450580A JP 1450580 A JP1450580 A JP 1450580A JP S56111276 A JPS56111276 A JP S56111276A
Authority
JP
Japan
Prior art keywords
layer
density
carrier density
type
hetero
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1450580A
Other languages
Japanese (ja)
Other versions
JPS6158991B2 (en
Inventor
Junichi Nishizawa
Toru Tejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Stanley Electric Co Ltd
Original Assignee
Semiconductor Research Foundation
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation, Stanley Electric Co Ltd filed Critical Semiconductor Research Foundation
Priority to JP1450580A priority Critical patent/JPS56111276A/en
Priority to GB8103499A priority patent/GB2070859B/en
Priority to DE19813104082 priority patent/DE3104082A1/en
Priority to FR8102426A priority patent/FR2475803B1/en
Priority to US06/232,967 priority patent/US4414558A/en
Publication of JPS56111276A publication Critical patent/JPS56111276A/en
Publication of JPS6158991B2 publication Critical patent/JPS6158991B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To reduce misfit dislocation on a hetero-boundary and raise the luminous efficiency by making the width of the forbidden band of a P layer constituting a PN junction smaller than that of an N layer and by specifying the carrier density of the P and N layers respectively. CONSTITUTION:A P type Ga1-xAlxAs layer 2 serving as a luminous part and an N type Ga1-yAlyAs layer 3 are laminated and grown epitaxially on a P type GaAs substrate 1 and an electrode 4 is formed on the whole back surface of the substrate 1, while an electrode 5 is formed in the central part of the layer 3. In such a constitution, the width of the forbidden band of the layer 3 through the intermediary of heterojunction 6 is made larger than that of the layer 2, while the relation between the carrier density p of the layer 2 and the carrier density n of the layer 3 is set to be p>n. Furthermore, the density p of the layer 2 is specified to be 4.5X 10<17>cm<-3p<2.5X10<18>cm<-3> and the density n of the layer 3 to be 2X10<17>cm<-3 n<1X10<18>cm<-3>, respectively. In this way, defects on the hetero-boundary are reduced and the luminous efficiency is improved.
JP1450580A 1980-02-07 1980-02-07 Luminous semiconductor device Granted JPS56111276A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1450580A JPS56111276A (en) 1980-02-07 1980-02-07 Luminous semiconductor device
GB8103499A GB2070859B (en) 1980-02-07 1981-02-05 Hetero-junction light-emitting diode
DE19813104082 DE3104082A1 (en) 1980-02-07 1981-02-06 Light-emitting heterojunction diode
FR8102426A FR2475803B1 (en) 1980-02-07 1981-02-06 HETERO-JUNCTION LIGHT EMITTING DIODE
US06/232,967 US4414558A (en) 1980-02-07 1981-02-09 Hetero-junction light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1450580A JPS56111276A (en) 1980-02-07 1980-02-07 Luminous semiconductor device

Publications (2)

Publication Number Publication Date
JPS56111276A true JPS56111276A (en) 1981-09-02
JPS6158991B2 JPS6158991B2 (en) 1986-12-13

Family

ID=11862916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1450580A Granted JPS56111276A (en) 1980-02-07 1980-02-07 Luminous semiconductor device

Country Status (1)

Country Link
JP (1) JPS56111276A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183977A (en) * 1985-02-08 1986-08-16 Toshiba Corp Light emitting element and manufacture thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157084A (en) * 1974-05-28 1975-12-18
JPS52104091A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Light-emitting semiconductor
JPS536591A (en) * 1976-07-07 1978-01-21 Stanley Electric Co Ltd Pattern display light emitting diode and method of producing same
JPS55158684A (en) * 1979-05-28 1980-12-10 Semiconductor Res Found Light emitting semiconductor
JPS5670766A (en) * 1979-11-14 1981-06-12 Yamajin Riken Kk Sweating promoting panel and its use

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157084A (en) * 1974-05-28 1975-12-18
JPS52104091A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Light-emitting semiconductor
JPS536591A (en) * 1976-07-07 1978-01-21 Stanley Electric Co Ltd Pattern display light emitting diode and method of producing same
JPS55158684A (en) * 1979-05-28 1980-12-10 Semiconductor Res Found Light emitting semiconductor
JPS5670766A (en) * 1979-11-14 1981-06-12 Yamajin Riken Kk Sweating promoting panel and its use

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183977A (en) * 1985-02-08 1986-08-16 Toshiba Corp Light emitting element and manufacture thereof
JPH055191B2 (en) * 1985-02-08 1993-01-21 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS6158991B2 (en) 1986-12-13

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