JPS56101786A - Light emitting semiconductor device and manufacture thereof - Google Patents
Light emitting semiconductor device and manufacture thereofInfo
- Publication number
- JPS56101786A JPS56101786A JP487480A JP487480A JPS56101786A JP S56101786 A JPS56101786 A JP S56101786A JP 487480 A JP487480 A JP 487480A JP 487480 A JP487480 A JP 487480A JP S56101786 A JPS56101786 A JP S56101786A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- type epitaxial
- light emitting
- elements
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- 230000000694 effects Effects 0.000 abstract 2
- 229910021480 group 4 element Inorganic materials 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910021476 group 6 element Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain a light emitting semiconductor device with very high light emitting efficiency by reducing absorbing effect in the crystals in a silicon-doped GaAs LED. CONSTITUTION:On a group III-V compound semiconductor substrate, a P type epitaxial layer including group IV elements such as Si, Ge, Sn, etc., and an N type epitaxial layer including group VI elements such as Te, Se, S, etc., are laminated. A P-N junction is formed between the two epitaxial layers, and near the P-N junction in the P type epitaxial layer, group IV elements are doped to a high concentration and band tailing is increased than in other parts. When a silicon-doped GaAs LED is constructed in such a way, band tailing in a P type epitaxial layer 5 except the part 7 of a P type GaAs epitaxial layer becomes small and the energy EP between the conduction band and the filled band becomes larger than EO. In the N type epitaxial layer on the other hand, an impurity level formed by, for example, To becomes shallow and the energy EN between the bands becomes larger than EO, and absorbing effect is reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP487480A JPS56101786A (en) | 1980-01-18 | 1980-01-18 | Light emitting semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP487480A JPS56101786A (en) | 1980-01-18 | 1980-01-18 | Light emitting semiconductor device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56101786A true JPS56101786A (en) | 1981-08-14 |
| JPS6244716B2 JPS6244716B2 (en) | 1987-09-22 |
Family
ID=11595809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP487480A Granted JPS56101786A (en) | 1980-01-18 | 1980-01-18 | Light emitting semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56101786A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001244501A (en) * | 2000-02-28 | 2001-09-07 | Showa Denko Kk | Epitaxial wafer for infrared-emitting diode and light emitting diode formed thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5185388A (en) * | 1975-01-24 | 1976-07-26 | Hitachi Ltd | gaas sekigaihatsukodaioodo |
-
1980
- 1980-01-18 JP JP487480A patent/JPS56101786A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5185388A (en) * | 1975-01-24 | 1976-07-26 | Hitachi Ltd | gaas sekigaihatsukodaioodo |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001244501A (en) * | 2000-02-28 | 2001-09-07 | Showa Denko Kk | Epitaxial wafer for infrared-emitting diode and light emitting diode formed thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244716B2 (en) | 1987-09-22 |
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